公开(公告)号：EP1995347A4

公开(公告)日：2010-04-28

申请号：EP06782219

申请日：2006-07-27

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  KAWAGUCHI KAZUO

IPC: C23C16/18 ,  H01L21/285

CPC classification number: C23C16/16 ,  C23C16/4485 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

公开(公告)号：EP1551057A4

公开(公告)日：2006-03-22

申请号：EP03792692

申请日：2003-08-15

Applicant: JSR CORP

Inventor： MATSUKI YASUO ,  IWASAWA HARUO ,  KATO HITOSHI

IPC: H01L21/208 ,  C23C24/10 ,  C23C26/02 ,  H01L31/18

CPC classification number: C23C24/10 ,  C23C26/02 ,  C30B7/005 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02667 ,  H01L21/02686

Abstract: A composition for forming a silicon film containing silicon particles and a dispersing medium, and a method for forming a silicon film wherein a coating film of the above composition is formed on a substrate and then, an instantaneous fusion, a heat treatment or an optical treatment is conducted. Using the composition and method, a poly-crystal silicon film having a desired thickness that may be used as a silicon film for a solar battery can be efficiently produced in a simple and easy way.

公开(公告)号：EP1085560A4

公开(公告)日：2005-07-27

申请号：EP00912946

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SHIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: C30B7/00 ,  H01L21/208 ,  C01B33/02

CPC classification number: H01L21/0242 ,  C30B7/00 ,  C30B7/005 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02628 ,  H01L21/02675

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.

Abstract translation: 将含有不含碳的环状硅烷化合物和/或通过硼或磷改性的硅烷化合物的溶液施加到基板上，形成硅前体膜，然后通过加热将膜转变成半导体硅， /或轻度处理。 因此，与CVD方法中的真空处理不同，可以以低成本容易地制造具有作为电子材料的令人满意的特性的硅膜。

公开(公告)号：EP1087433A4

公开(公告)日：2001-08-16

申请号：EP00912923

申请日：2000-03-29

Applicant: JSR CORP

Inventor： MATSUKI YASUO

IPC: C23C18/12 ,  H01L21/312 ,  H01L21/316

CPC classification number: H01L21/316 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/3121 ,  H01L21/3122

Abstract: There is provided a process for forming a silicon oxide film which is useful as an electrical insulating film, dielectric film or protective film as used in LSI, thin-film transistor, photoelectric converter, photosensitive body and the like. The process comprises forming a coating film from a polysilane compound represented by the formula SinRm (wherein n is an integer of 3 or more, m is an integer of n to 2n+2, and a plurality of R's are independently a hydrogen atom or an alkyl group) and oxidizing the coating film to form the silicon oxide film.

Abstract translation: 一种用于形成用作LSI的电绝缘，电介质或保护膜，薄膜晶体管，光电转换器件，感光器等的氧化硅膜的方法，该方法包括形成由以下通式表示的聚硅烷化合物制成的涂膜：SinRm （式中，n为3以上的整数，m为n〜2n + 2的整数，R分别独立地为氢或烷基），将该涂膜氧化成氧化硅膜。

公开(公告)号：EP0840161A4

公开(公告)日：1999-11-24

申请号：EP97922059

申请日：1997-05-15

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  YASUDA KYOUYU ,  KAWAMURA SHIGEO ,  TOYOSHIMA TSUKASA ,  MATSUKI YASUO ,  WAKABAYASHI KENGO

IPC: C08G73/10 ,  G02F1/1337

CPC classification number: C08G73/10 ,  G02F1/133723

Abstract: A liquid crystal aligning agent comprising two or more polymers selected from the group consisting of polyamic acids and imidated polymers having structures prepared by dehydration and ring closure of polyamic acids. In the above two or more polymers, the larger the degree of imidation of the polymer, the smaller the surface free energy of the polymer. This aligning agent is less likely to cause an afterimage in a liquid crystal display device and has a high pretilt angle.

公开(公告)号：JP2013229160A

公开(公告)日：2013-11-07

申请号：JP2012099735

申请日：2012-04-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KOSE OSAMU ,  MATSUKI YASUO ,  SHINODA TOMOTAKA

IPC: H01M4/62 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/48

CPC classification number: Y02E60/122

Abstract: PROBLEM TO BE SOLVED: To provide a binder composition for an electrode of a power storage device having a large charge/discharge capacity in which capacity degradation due to repetition of a charge/discharge cycle is reduced.SOLUTION: The binder composition for electrode contains (A) at least one kind of polymer selected from a group consisting of polyamic acid and imidization polymer thereof, and (B) at least one kind of carboxylic acid compound selected from a group consisting of a compound having 1-4 carboxylic groups in a molecule and salts thereof. When the content of the (A) polymer is Mb pts.mass and the content of (B) carboxylic acid compound is Mb pts.mass, following relation is satisfied Ma/Mb=50-400.

Abstract translation: 要解决的问题：提供一种具有大的充放电容量的蓄电装置的电极用粘结剂组合物，其中由于重复充电/放电循环而引起的容量劣化降低。解决方案：电极用粘合剂组合物含有 A）至少一种选自聚酰胺酸及其酰亚胺化聚合物的聚合物，和（B）选自由分子中具有1-4个羧基的化合物组成的组中的至少一种羧酸化合物 及其盐。 当（A）聚合物的含量为Mb pts.mass，（B）羧酸化合物的含量为Mb pts.mass时，满足Ma / Mb = 50-400的关系。

公开(公告)号：JP2013196975A

公开(公告)日：2013-09-30

申请号：JP2012064341

申请日：2012-03-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： UEDA MASAHIRO ,  MATSUKI YASUO ,  YAMADA KINJI

IPC: H01M4/62 ,  H01M4/13 ,  H01M4/139

CPC classification number: Y02E60/122

Abstract: PROBLEM TO BE SOLVED: To provide a binder composition for the electrode of a power storage device in which the degree of capacity degradation due to repetition of charge/discharge cycle is low, even if an active material having a large discharge capacity and a large volume change incident to charge/discharge is used.SOLUTION: In the binder composition for the electrode of a power storage device containing at least a polymer (A) and a liquid medium (B), the polymer (A) is a polymer having a repeating unit (a1) derived from a polymerizable unsaturated compound having a 3-6 membered cyclic ether structure, and a repeating unit (a3) derived from a polymerizable unsaturated compound having a chain ether structure, or a polymer having a repeating unit (a2) derived from a polymerizable unsaturated compound having a 4-6 membered cyclic ether structure.

Abstract translation: 要解决的问题：为了提供一种蓄电装置的电极用粘合剂组合物，其中由于充放电循环重复而导致的容量劣化程度低，即使具有大放电容量和大体积的活性材料 使用充电/放电的变化事件。解决方案：在至少含有聚合物（A）和液体介质（B）的蓄电装置的电极用粘合剂组合物中，聚合物（A）是具有重复 衍生自具有3-6元环醚结构的可聚合不饱和化合物的单元（a1）和衍生自具有链醚结构的可聚合不饱和化合物的重复单元（a3）或具有重复单元（a2）的聚合物衍生 来自具有4-6元环醚结构的可聚合不饱和化合物。

公开(公告)号：JP2012207152A

公开(公告)日：2012-10-25

申请号：JP2011074587

申请日：2011-03-30

Applicant: Japan Science & Technology Agency ,  Jsr Corp ,  Jsr株式会社 ,  独立行政法人科学技術振興機構

Inventor： SHIMODA TATSUYA ,  MATSUKI YASUO ,  TAKAGISHI HIDEYUKI ,  WANG DAOHAI ,  KAWAJIRI RYO

IPC: C08G77/60

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a polyhydrosilane having a high molecular weight by polymerizing SiHin high activity and high efficiency.SOLUTION: The method for producing a polyhydrosilane comprises polymerization of SiHwith a catalyst produced by contacting a group 4 metallocene with an alkylation agent selected from alkyllithium, alkylaluminum, alkylmagnesium and alkylmagnesium halide, wherein the contact step of the group 4 metallocene with the alkylation agent is carried out in the presence of SiH. The polyhydrosilane produced by the method is suitably usable as a silicone precursor.

Abstract translation: 待解决的问题：提供以高活性和高效率聚合SiH 4 的生产具有高分子量的聚氢硅烷的方法。 解决方案：聚氢硅烷的制造方法包括通过使第4族茂金属与选自烷基锂，烷基铝，烷基镁的烷基化剂接触而制备的催化剂与SiH 4 烷基镁卤化物，其中第4族茂金属与烷基化剂的接触步骤在SiH 4 的存在下进行。 通过该方法制备的聚氢硅烷适合用作硅氧烷前体。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012182102A

公开(公告)日：2012-09-20

申请号：JP2011046084

申请日：2011-03-03

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： ARAI TAKAYUKI ,  TAKAHASHI MASAYUKI ,  KONNO KEIJI ,  MATSUKI YASUO

IPC: H05B33/04 ,  H01L51/50

Abstract: PROBLEM TO BE SOLVED: To provide an organic EL device having a long life and high reliability, in which amounts of water and oxygen within the device are suppressed at sufficiently low level for a long period of time.SOLUTION: An organic EL device 100 according to the present invention includes: an organic EL element 30 provided between a first substrate 10 and a second substrate 20; a barrier film 40 provided to cover the organic EL element 30; and an absorption film 50. The absorption film 50 contains a compound represented by the following general formula (1). (R)M...(1) (In the formula (1), Rrepresents one selected from among a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, a cyclic alkyl group, an aryl group, an alkoxyl group, a carboxyl group and an amino group. A plurality of R's may be the same or different. (n) represents 2 or 3, and is equal to a valence of M. M represents a divalent or trivalent metal atom and has at least one C-M bond.)

Abstract translation: 要解决的问题：提供一种长寿命和高可靠性的有机EL器件，其中器件内的水和氧的量长时间被抑制在足够低的水平。 解决方案：根据本发明的有机EL器件100包括：设置在第一衬底10和第二衬底20之间的有机EL元件30; 设置为覆盖有机EL元件30的阻挡膜40; 和吸收膜50.吸收膜50含有由以下通式（1）表示的化合物。 （R 1 ） n M ...（1）（在公式（1）中，R 1可以相同或不同，（n）表示2或3，并且等于M的化合价.M表示二价或三价金属 原子，并且具有至少一个CM键。）版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010150129A

公开(公告)日：2010-07-08

申请号：JP2009267295

申请日：2009-11-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA HIDEKI ,  SUMIYA KOJI ,  MATSUKI YASUO

IPC: C01G51/02

Abstract: PROBLEM TO BE SOLVED: To provide a container containing a cobalt carbonyl complex, wherein the cobalt carbonyl complex can stably be kept.
SOLUTION: The container containing the cobalt carbonyl complex is a container for holding the cobalt carbonyl complex and gasses and the gases contain carbon monoxide. The container suitably has a container body equipped with a gas inlet and a gas outlet. Thus the shape of the container enables the cobalt carbonyl complex to sublimate from the inside of the container to form a cobalt film onto a substrate by heating thereof.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种容纳钴羰基络合物的容器，其中可以稳定地保持羰基钴络合物。 解决方案：含有羰基钴络合物的容器是用于保持钴羰基络合物和气体并且气体含有一氧化碳的容器。 容器适当地具有装备有气体入口和气体出口的容器主体。 因此，容器的形状使钴羰基络合物从容器的内部升华，通过加热形成钴膜到基底上。 版权所有（C）2010，JPO＆INPIT