METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES
    31.
    发明申请
    METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES 审中-公开
    在微电子和其他工业过程中传输超临界流体的方法

    公开(公告)号:WO2004070776A3

    公开(公告)日:2005-01-20

    申请号:PCT/US0340155

    申请日:2003-12-08

    Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

    Abstract translation: 从压力容器(例如,微电子制造工艺)中移出超临界流体的方法包括以下步骤:提供包含第一超临界流体(所述超临界流体优选包含二氧化碳)的封闭压力容器; 向所述容器中加入第二流体(通常也是超临界流体),其中所述第二流体以大于第一超临界流体的压力的压力加入,并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体(优选流体)的压力从容器移位,同时保持其间的界面。

    POSITIVE TONE LITHOGRAPHY IN CARBON DIOXIDE SOLVENTS
    33.
    发明申请
    POSITIVE TONE LITHOGRAPHY IN CARBON DIOXIDE SOLVENTS 审中-公开
    二氧化碳溶液中的积极色调

    公开(公告)号:WO2004046826A2

    公开(公告)日:2004-06-03

    申请号:PCT/US0336670

    申请日:2003-11-12

    CPC classification number: G03F7/36 G03F7/32 G03F7/325 G03F7/327

    Abstract: A method for carrying out positive tone lithography with a carbon dioxide solvent system is carried out by (a) providing a substrate having a polymer resist layer formed thereon; (b) exposing at least one portion of the polymer resist layer to radiant energy to form at least one light field region in the polymer resist layer; and then (c) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system preferably comprising a polar group, under conditions in which the at least one light field region is preferentially removed.

    Abstract translation: 通过(a)提供其上形成有聚合物抗蚀剂层的基材,进行用二氧化碳溶剂系统进行正色调光刻的方法; (b)将聚合物抗蚀剂层的至少一部分暴露于辐射能以在聚合物抗蚀剂层中形成至少一个光场区域; 然后(c)在其中优选除去所述至少一个光场区域的条件下,使所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系优选包含极性基团。

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