METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES

    公开(公告)号:AU2003299658A1

    公开(公告)日:2004-08-30

    申请号:AU2003299658

    申请日:2003-12-08

    Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

    METHOD OF COATING MICROELECTRONIC SUBSTRATES

    公开(公告)号:AU2003294557A1

    公开(公告)日:2004-08-30

    申请号:AU2003294557

    申请日:2003-12-02

    Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

    Method of coating microelectronic substrates

    公开(公告)号:AU2003294557A8

    公开(公告)日:2004-08-30

    申请号:AU2003294557

    申请日:2003-12-02

    Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

    METHOD OF COATING MICROELECTRONIC SUBSTRATES
    8.
    发明申请
    METHOD OF COATING MICROELECTRONIC SUBSTRATES 审中-公开
    涂覆微电子基片的方法

    公开(公告)号:WO2004070071A3

    公开(公告)日:2004-11-11

    申请号:PCT/US0338324

    申请日:2003-12-02

    Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

    Abstract translation: 一种涂布基材的方法包括以下步骤:(a)在封闭容器中提供基材,基材具有表面部分; (b)用第一超临界流体至少部分地填充封闭容器,使得所述第一超临界流体接触表面部分,第一超临界流体携带或含有涂层组分; 然后(c)将单独的压缩气体气氛添加到反应容器中,使得在第一超临界流体和单独的压缩气体气氛之间形成边界,所述单独的压缩气体气氛的密度小于所述第一超临界流体的密度; 然后(d)通过继续将所述分开的压缩气体气氛加入所述容器,使所述边界移过所述表面部分,并将涂层组分的薄膜沉积在所述微电子基底上,从所述容器中置换所述第一超临界流体。

    METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES
    10.
    发明申请
    METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES 审中-公开
    在微电子和其他工业过程中传输超临界流体的方法

    公开(公告)号:WO2004070776A3

    公开(公告)日:2005-01-20

    申请号:PCT/US0340155

    申请日:2003-12-08

    Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

    Abstract translation: 从压力容器(例如,微电子制造工艺)中移出超临界流体的方法包括以下步骤:提供包含第一超临界流体(所述超临界流体优选包含二氧化碳)的封闭压力容器; 向所述容器中加入第二流体(通常也是超临界流体),其中所述第二流体以大于第一超临界流体的压力的压力加入,并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体(优选流体)的压力从容器移位,同时保持其间的界面。

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