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公开(公告)号：JPH1167111A
公开(公告)日：1999-03-09
申请号：JP21766697
申请日：1997-08-12
Applicant: NEC CORP
Inventor： TAIDA SHIYUNJI , IMURA HIRONORI , MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of a cold cathode due to the impact of positive ions. SOLUTION: A voltage of an accelerating electrode 13 is impressed so as to satisfy the relationship among a perveance Pμ of an electron source determined by the shape of an electron gun part 1, an electric potential Va of the accelerating electrode 13, and a current Ib of an electron beam (e), represented by the formula Ib . At any time during operation, including rising and falling, the accelerating electrode 13 is impressed to the electric potential which is highest among that of each electrode in the electron tube. A gate 24 voltage is impressed at the end step of a rise operation, and the gate 24 voltage is first shut down at a fall time.
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公开(公告)号：JPH09115426A
公开(公告)日：1997-05-02
申请号：JP27380095
申请日：1995-10-23
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
IPC: H01J1/304 , D06M13/00 , G09G1/00 , G09G3/22 , H01J3/02 , H01J3/18 , H01J29/04 , H01J29/62 , H04N3/26 , H01J1/30 , H01J31/12
Abstract: PROBLEM TO BE SOLVED: To realize excellent resolution over the whose surface of a display image screen by negating only distortion of a spot of an electron beam generated according to deflection. SOLUTION: An electron emitting area 8 composed of at least a singular minute cold cathode 7 composed of an emitter 6 and a gate electrode 4 is formed on a substrate 1, and plural focusing electrodes are arranged on the periphery of this electron emitting area 8 so as to surround the electron emission region 8, and the focusing electrodes opposing with the electron emission region 8 as the center are connected to each other. Horizontal directional focusing is strengthened when an electron beam scans a peripheral part of an image screen on the basis of horizontal and vertical synchronous signals, and an electron beam having a longitudinally long spot is formed in the vicinity of a cathode. This cold cathode is constituted by using a cathode-ray tube as an electron source.
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公开(公告)号：JPH08148080A
公开(公告)日：1996-06-07
申请号：JP28772594
申请日：1994-11-22
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PURPOSE: To improve a reliable life of a cathode by preventing decreasing of insulating resistance and dielectric strength due to contamination by dirt, dust or the like received during a process of manufacturing an array-shaped field emission cold cathode and an electronic device equipped with this cathode. CONSTITUTION: Layers of insulating layer 2 and gate electrode 3 are deposited through a cathode of forming an emitter 5 by a film deposition method in a gate opening and through a mask formed on the emitter 5 formed by etching a substrate 1. In this cathode, a common insulating film 6 is formed in at least a lower part of the emitter 5 and a side surface part of the insulating layer 2. In order to form this insulating film 6, a pressure reducing CVD method or SOG technique is used.
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公开(公告)号：JPH07201272A
公开(公告)日：1995-08-04
申请号：JP33629793
申请日：1993-12-28
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , OKAMOTO AKIHIKO
Abstract: PURPOSE:To uniform an emission current per emitter in a high density field emission cold cathode increase a total emission current in the cathode, prevent discharge breakdown by limiting a discharge current between a gate and an emitter and realize the reliable cathode. CONSTITUTION:A highly resistant epitaxial layer 2 is laminated on a substrate 1 and ions are driven therein through an opening formed in a gate electrode 4 to form a resistance layer 6 independent for every emitter in the epitaxial layer 2. An emitter 7 is formed on the resistance layer 6 with known evaporation. Or, ions are driven into the first conductive substrate 1 through the opening in the gate electrode to form the second conductive area independent for every emitter. By means of voltage drop in the resistance layer 6 or in the second conductive area, an emission current is uniformalized.
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公开(公告)号：JPH07182968A
公开(公告)日：1995-07-21
申请号：JP32358093
申请日：1993-12-22
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PURPOSE:To make a microwave tube compact in size and have high precision and improve its reliability and efficiency, by dividing an emitter electrode into a plurality of parts and making it possible to switch two current modes at high current and low current by altering the voltage applied. CONSTITUTION:While being set to intersect each other right and left and to cover a circular electron emission region, a first emitter electrode 5 and a second emitter electrode 6 of metal thin films are formed on an insulating substrate 1. When a switch 7 is set at B position, a cold cathode is turned in the high current mode and an electric field is applied to the tips of all of the emitters 4 and electrons are emitted from the whole surface of the cathode, that is, the emitters 4 in the whole surface of the circular electron emission region. When the switch 7 is set at A position, the cold cathode is turned in low current mode and the electrode 6 is kept at the same potential as that of gate electrodes 3, so that electrons are not emitted from the emitters 4 formed on the electrode 6 and electrons are emitted only from the emitters 4 formed on the electrode 5. Consequently, axially symmetric and excellent emission current distribution can be obtained.
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Patent Agency Ranking
公开(公告)号：JPH07161286A
公开(公告)日：1995-06-23
申请号：JP30823993
申请日：1993-12-08
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , YAMADA KEIZO , KURIYAMA TOSHIHIDE
Abstract: PURPOSE:To prevent insulation from decreasing between a gate electrode and emitter to realize stable action while electron beam high speed switching and high frequency current modulation can be performed and further to form an electron beam of high quality with a small ripple or the like while reducing gas emission in a vacuum, by reducing electrostatic capacity between gate terminal/emitter terminal of a field emission cold cathode chip. CONSTITUTION:In at least one of a peripheral part of a gate electrode 3, bonding pad 7 for supplying voltage to the gate electrode 3 and wiring 6 between the bonding pad 7 and the gate electrode 3, the thickness of an insulating layer 4 under these electrode, pad and wiring is formed larger than the thickness of an insulating layer in an electron emitting region. Dimension of an outer frame of the insulating layer 4 is increased larger than outer frames of the gate electrode 3, wiring 6 and the bonding pad 7.
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公开(公告)号：JPH0714501A
公开(公告)日：1995-01-17
申请号：JP17481793
申请日：1993-06-22
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , IMURA HIRONORI
IPC: H01J1/304 , H01J1/30 , H01J37/073
Abstract: PURPOSE:To form a high-quality electron beam by laminating a substrate laminated with a conducting layer, a sharpened electrode, and an insulating layer, and forming an electrode insulated from a control electrode around the control electrode. CONSTITUTION:Voltage of tens to 100V is applied to a gate electrode 4 while the potential of a substrate 1, i.e., emitters 2, is used as a reference, and voltage is applied to a peripheral electrode 7 between the substrate 1 and the electrode 4, for example. The distance between the electrode 7 and the electrode 4, a wiring 6, and a bonding pad 5 is set to about 10mum, and it is sufficiently larger than the thickness of lmum of an insulating layer 3. The electrostatic capacity between the electrode 4 and the electrode 7 is sufficiently smaller than the electrostatic capacity between the electrode 4 and the emitters 2, and a possibility of occurrence of an insulation problem is sufficiently small. The insulating layer 3 is exposed on the peripheral section of the substrate 1, and the insulation between the substrate 1 and the bonding pad 5, i.e., the gate electrode 4, and between the substrate 1 and the electrode 7 is secured. Electric charges can be prevented from being accumulated on an insulating film.
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公开(公告)号：JPH06223706A
公开(公告)日：1994-08-12
申请号：JP963193
申请日：1993-01-25
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , YAMADA KEIZO , TOMIHARI YOSHINORI
IPC: H01J1/304 , H01J3/02 , H01J3/14 , H01J3/18 , H01J9/02 , H01J23/04 , H01J29/04 , H01J37/073 , H01J1/30
Abstract: PURPOSE:To realize a cold cathode in which the structure is simple, the assembly is simple, the accuracy is high, and a small size electron gun can be composed. CONSTITUTION:An opening common to a minute cold cathode group 12 is provided on the first insulating layer 8 to compose the minute cold cathode group 12, and a gate electrode 9, and the second insulator 11 thicker than the first insulating layer 8, and a metallic layer 2 are formed. As a result, an electron beam 6 is formed from the electrons discharged from the numerous minute cold cathodes 12. In order to manufacture the cathode 5, a cold cathode chip 3 including the gate electrode 9, and a composition composed of the thick insulator 11 and the metallic layer 2 are produced separately, and then the positions of both members are fitted with high accuracy and integrated so as to make into a part.
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公开(公告)号：JPH06162919A
公开(公告)日：1994-06-10
申请号：JP31050892
申请日：1992-11-19
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , IMURA HIRONORI
Abstract: PURPOSE:To reduce a gate voltage for emitting the same current, and stabilize the emitted current by composing an insulation layer between a substrate and a gate electrode of a multi-layer structure having different dielectric constants, and using a material of a smaller dielectric constant on the substrate side. CONSTITUTION:A conical emitter 2 to emit electrons on a conductive substrate 1 is formed, and it is electrically connected to the substrate 1. Insulation layers 3, 4, etc., of a multi-layer structure of different dielectric constants are provided surrounding the emitter 2, and the dielectric constant of the first insulation layer 3 closest to the substrate 1 is set to be smaller than the dielectric constant of the second insulation layer 4. In addition, a gate electrode 5 is laminated on the second insulation layer 4 to form an aperture 5a surrounding the emitter 2. Field strength close to a forward end of the emitter 2 is thus set larger compared with that in case of the insulation layer of uniform field strength, so a lower gate voltage is required for obtaining the same emitted current. Possibility of generation of mechanical deformation at the forward end of the emitter 2 can thus be reduced when positive ions are accelerated by the gate voltage to give impact on an electron emission part of the emitter 2.
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公开(公告)号：JP2000350358A
公开(公告)日：2000-12-15
申请号：JP15405899
申请日：1999-06-01
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO
Abstract: PROBLEM TO BE SOLVED: To start suppression of surge at a low voltage by forming an emitter part and a discharge part oppositely on the surface of a pair of electrode substrates and setting the interval at the emitter part longer than that at the discharge part thereby protecting the emitter against damage due to ion impact during discharge. SOLUTION: Electrode substrates 1a, 1b are positioned oppositely while holding an insulator 3 between and an enclosure is formed by bonding the insulator 3 and the electrode substrates 1a, 1b. The electrode substrates 1a, 1b have concentric circular shape and an emitter part 5 is formed at the lowest position in the electrode substrate 1 while surrounding a central discharge part 4 located at a high position. Assuming the distance between the discharge parts of the opposite electrode substrates 1a, 1b is d1, and the distance between the emitters 6 of the opposite electrode substrates 1a, 1b is d2, a following relation is satisfied; d1
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