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公开(公告)号：DE10306309A1
公开(公告)日：2004-09-09
申请号：DE10306309
申请日：2003-02-14
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STREUBEL KLAUS , STAUSS PETER , KARNUTSCH CHRISTIAN
Abstract: Preparation of a radiation emitting semiconductor chip based on AlGaInP by the steps: preparation of substrate (12), application of a semiconductor on the substrate, which contains a photon emitting active layer (22), and application of a transparent decoupling layer (16) which includes compounds of given formula containing Ga, In, Al, and P, where substrate (12) is formed from germanium and layer (16) is applied at a maximum temperature of 800 [deg] C. An independent claim is included for the above radiation emitting semiconductor as described.
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