公开(公告)号：DE10306309A1

公开(公告)日：2004-09-09

申请号：DE10306309

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  STAUSS PETER ,  KARNUTSCH CHRISTIAN

IPC: H01L33/30 ,  H01L33/00

Abstract: Preparation of a radiation emitting semiconductor chip based on AlGaInP by the steps: preparation of substrate (12), application of a semiconductor on the substrate, which contains a photon emitting active layer (22), and application of a transparent decoupling layer (16) which includes compounds of given formula containing Ga, In, Al, and P, where substrate (12) is formed from germanium and layer (16) is applied at a maximum temperature of 800 [deg] C. An independent claim is included for the above radiation emitting semiconductor as described.

公开(公告)号：DE10323860A1

公开(公告)日：2004-11-11

申请号：DE10323860

申请日：2003-05-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  LUTGEN STEPHAN ,  SCHMID WOLFGANG ,  LINDER NORBERT ,  KARNUTSCH CHRISTIAN

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/10 ,  H01S5/14 ,  H01S5/18

Abstract: A semiconductor laser device comprises a radiationally active layer (24) parallel to a resonating axis (17) between the main surfaces (16,18) of a semiconductor body (14). There are two resonating mirrors (40,42) on the side surfaces which are epitaxially grown semiconductor layers. An independent claim is also included for a production process for the above.

公开(公告)号：DE10253160A1

公开(公告)日：2004-03-11

申请号：DE10253160

申请日：2002-11-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  PIETZONKA INES ,  KARNUTSCH CHRISTIAN

IPC: H01L33/14 ,  H01L33/30 ,  H01L33/00

Abstract: Electromagnetic radiation-emitting semiconductor component comprises a semiconductor sequence (14) having an active layer (22) emitting photons, and an electrically conducting covering layer (16) made from InxGayAl1-x-yP (where y = 0-1; x = 0-1; and x + y = not more than 1), especially GaP, arranged on the layer sequence and permeable for the photons emitted by the active layer. The covering layer is p-doped using carbon to produce good electrical conductivity. An Independent claim is also included for a process for the production of an electromagnetic radiation-emitting semiconductor component.

公开(公告)号：DE102004042146A1

公开(公告)日：2006-01-26

申请号：DE102004042146

申请日：2004-08-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  KARNUTSCH CHRISTIAN ,  SCHMID WOLFGANG

IPC: H01S3/0941 ,  H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/20 ,  H01S5/323

Abstract: A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

公开(公告)号：DE10239045A1

公开(公告)日：2004-03-11

申请号：DE10239045

申请日：2002-08-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KARNUTSCH CHRISTIAN ,  STREUBEL KLAUS ,  STAUSS PETER

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/30 ,  H01L31/18 ,  H01L31/0216

Abstract: In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Ga x (In y Al 1-y ) 1-x P wherein 0.8

公开(公告)号：DE50313373D1

公开(公告)日：2011-02-10

申请号：DE50313373

申请日：2003-08-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KARNUTSCH CHRISTIAN ,  LINDER NORBERT ,  LUFT JOHANN ,  LUTGEN STEPHAN ,  SCHMID WOLFGANG

IPC: H01S5/04 ,  H01S5/183 ,  H01S3/109 ,  H01S5/026 ,  H01S5/06 ,  H01S5/10 ,  H01S5/14

公开(公告)号：DE10253908B4

公开(公告)日：2010-04-22

申请号：DE10253908

申请日：2002-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  KARNUTSCH CHRISTIAN ,  STREUBEL KLAUS

IPC: H01L33/02 ,  H01L33/10

公开(公告)号：DE10241192A1

公开(公告)日：2004-03-11

申请号：DE10241192

申请日：2002-09-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUTGEN STEPHAN ,  SCHMID WOLFGANG ,  LUFT JOHANN ,  LINDER NORBERT ,  KARNUTSCH CHRISTIAN

IPC: H01S5/04 ,  H01S3/109 ,  H01S5/026 ,  H01S5/06 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/40 ,  H01S5/34 ,  H01S3/0941

Abstract: Optically pumped radiation-emitting semiconductor device comprises a semiconductor body having a pump radiation source (20) and a surface-emitted quantum well structure (11), and a recess (10) for coupling the pump radiation (2) in the quantum well structure between the pump radiation source and the quantum well structure. An Independent claim is also included for a process for the production of an optically pumped radiation-emitting semiconductor device.

公开(公告)号：DE502005006750D1

公开(公告)日：2009-04-16

申请号：DE502005006750

申请日：2005-04-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KARNUTSCH CHRISTIAN ,  LINDER NORBERT ,  SCHMID WOLFGANG

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/323

Abstract: A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

公开(公告)号：DE10253908A1

公开(公告)日：2004-04-08

申请号：DE10253908

申请日：2002-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH ,  KARNUTSCH CHRISTIAN ,  STREUBEL KLAUS

IPC: H01L33/10 ,  H01L33/00

Abstract: The radiation emitting semiconducting component has a radiation generating active layer (1) arranged between two distributed Bragg reflectors (21,22) forming an optical resonator, whereby the thickness (D) of the active layer is greater than the wavelength (lambda) of the optical resonator. The thickness of the active layer is an integral multiple of the wavelength of the optical resonator.