公开(公告)号：JP2005340836A

公开(公告)日：2005-12-08

申请号：JP2005156347

申请日：2005-05-27

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： STAUSS PETER

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/46

CPC classification number: H01L33/08 ,  H01L33/0079 ,  H01L33/46 ,  H01L2924/0002 ,  Y10S438/93 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronics constituent element capable of being used in various manners particularly. SOLUTION: An optoelectronics constituent element comprises a laminate structure and a support. The laminate structure includes at least two active zones. The support is constituted such that the support is adhered to the laminate structure. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够以各种方式特别使用的光电子构成元件。 解决方案：光电子构成元件包括层压结构和支撑体。 层压结构包括至少两个活动区域。 支撑体构成为使得支撑体粘附到层压结构上。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006108675A

公开(公告)日：2006-04-20

申请号：JP2005288041

申请日：2005-09-30

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： JAEGER ARNDT ,  STAUSS PETER

IPC: H01L31/10

CPC classification number: H01L31/1013 ,  G01J3/513 ,  G01J2003/516 ,  H01L31/02162 ,  H01L31/03046 ,  Y02E10/544

Abstract: PROBLEM TO BE SOLVED: To provide an efficient and small-sized beam detector of a small required area which can be easily manufactured at a low cost for sensing a beam present in a visible spectrum region. SOLUTION: A signal formed in a first sensing element is taken out separately from a signal formed in a second sensing element, the first sensing element is partially permeative in a visible beam, and the visible beam which has permeated the first sensing element forms a signal in the second sensing element. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种小的要求区域的有效和小尺寸的光束检测器，其可以以低成本容易地制造用于感测存在于可见光谱区域中的光束。 解决方案：形成在第一感测元件中的信号与形成在第二感测元件中的信号分离地取出，第一感测元件部分地透过可见光束，并且已经渗透到第一感测元件的可见光束 在第二感测元件中形成信号。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004235649A

公开(公告)日：2004-08-19

申请号：JP2004021828

申请日：2004-01-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ILLEK STEFAN ,  STAUSS PETER ,  PLOESSL ANDREAS ,  DIEPOLD GUDRUN ,  PIETZONKA INES ,  STEIN WILHELM ,  WIRTH RALPH ,  WEGLEITER WALTER

IPC: H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

Abstract: PROBLEM TO BE SOLVED: To make directly formable an electric contact area on an n-conductive AlGaInP based or AlGaInAs based semiconductor layer.
SOLUTION: A method includes: adjusting by epitaxial growth semiconductor layers having the n-conductive AlGaInP based or AlGaInAs based outer layers and an active zone that emits electromagnetic radiation; making an electric contact material having Au and at least one doping substance adhered to the outer layer; and tempering the outer layer. The doping substance used in the step of making the electric contact material adhered to the outer layer contains at least one element selected from the group consisting of Ge, Si, Sn, and Te.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：在基于n导电AlGaInP或AlGaInAs的半导体层上直接形成电接触区域。 解决方案：一种方法包括：通过具有基于n导电AlGaInP或AlGaInAs的外层的外延生长半导体层和发射电磁辐射的有源区进行调整; 制造具有Au的电接触材料和至少一种掺杂物质粘附到外层; 并回火外层。 在使电接触材料附着于外层的步骤中使用的掺杂物质含有选自Ge，Si，Sn和Te中的至少一种元素。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2004111923A

公开(公告)日：2004-04-08

申请号：JP2003208104

申请日：2003-08-20

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： LINDER NORBERT ,  STAUSS PETER ,  HAMPEL MARK ,  STREUBEL KLAUS

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/04

Abstract: PROBLEM TO BE SOLVED: To improve an aging characteristic of a semiconductor light emitting diode. SOLUTION: A layer sequence of an InGaAlP base is grown on an Si-doped GaAs wafer. The layer sequence includes an n-doped cover layer and active layer 14, and a magnesium-p-doped cover layer 20. Further, a GaP window layer 22 is grown on a p cover layer 20 during an epitaxial process at a temperature of 840 to 860°C. A diffusion-stop layer 16 is provided between the active layer 14 and the p cover layer 20 so as to suppress the diffusion of Mg-doping atom from the p cover layer to the active layer 14 (the diffusion usually occurs at high growth temperatures to the GaP window layer 22). The diffusion-stop layer 16 is strongly n-doped and comprises a bias loaded over grid. COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2004021457A3

公开(公告)日：2004-12-23

申请号：PCT/DE0302786

申请日：2003-08-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KARNUTSCH CHRISTIAN ,  STAUSS PETER ,  STREUBEL KLAUS

Inventor： KARNUTSCH CHRISTIAN ,  STAUSS PETER ,  STREUBEL KLAUS

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/30

CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/0262 ,  H01L33/0066

Abstract: The invention relates to a method for producing a radiation-emitting semiconductor chip based on AlGaInP, comprising the following steps: preparing a substrate; applying a series of semiconductor layers to the substrate, said series of layers containing a photon-emitting active layer, and; applying a transparent decoupling layer comprising Gax(InyAl1-y)1-xP, whereby 0.8

Abstract translation: 在包括以下步骤的AlGaInP基的制造发射辐射的半导体芯片的方法，包括：提供衬底; 施加半导体层序列到基材上，其中包括一个光子的发光有源层; 和施加透明去耦层，该GAX（InyAl1-Y）1-XP与0.8 <= x和0 <= Y包括<= 1，根据本发明提供的底物由锗形成和，在所述耦合输出层透明 低温应用。

公开(公告)号：DE112020000567A5

公开(公告)日：2021-12-02

申请号：DE112020000567

申请日：2020-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUMHEINRICH THORSTEN ,  BEHRINGER MARTIN ,  BIEBERSDORF ANDREAS ,  BOSS RUTH ,  BRANDL MICHAEL ,  BRICK PETER ,  DROLET JEAN-JAQUES ,  HALBRITTER HUBERT ,  KREINER LAURA ,  LANG ERWIN ,  LEBER ANDREAS ,  MEYER TOBIAS ,  PFEUFFER ALEXANDER ,  PHILIPPENS MARC ,  RICHTER JENS ,  SCHWARZ THOMAS ,  TA PAUL ,  VARGHESE TANSEN ,  WANG XUE ,  WITTMANN SEBASTIAN ,  STOLZ JULIA ,  DIEKMANN KARSTEN ,  ENGL KARL ,  HERRMANN SIEGFRIED ,  HAHN BERTHOLD ,  ILLEK STEFAN ,  JENTZSCH BRUNO ,  PERZLMAIER KORBINIAN ,  PIETZONKA INES ,  RAUSCH ANDREAS ,  REGAU KILIAN ,  RUEGHEIMER TILMAN ,  SCHWALENBERG SIMON ,  SOELL CHRISTOPHER ,  STAUSS PETER ,  SUNDGREN PETRUS ,  VU HOA ,  WIESMANN CHRISTOPHER ,  BOGNER GEORG ,  HÖRNER PATRICK ,  KLEMP CHRISTOPH ,  MÜLLER JENS ,  NEVELING KERSTIN ,  PARK JONG ,  RAFAEL CHRISTINE ,  SINGER FRANK ,  CHAND KANISHK ,  FEIX FELIX ,  MÜLLER CHRISTIAN ,  RUMMEL EVA-MARIA ,  HEITZER NICOLE ,  ASSMANN MARIE ,  BERGER CHRISTIAN ,  KANEVCE ANA

IPC: H01L33/62 ,  G09F9/33 ,  H01L25/075 ,  H01L33/60

公开(公告)号：DE112014000633B4

公开(公告)日：2020-03-26

申请号：DE112014000633

申请日：2014-01-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BERGBAUER WERNER ,  DRECHSEL PHILIPP ,  STAUSS PETER ,  RODE PATRICK

IPC: H01L33/12 ,  H01L33/32

Abstract: Halbleiterschichtenfolge (100) umfassend eine erste nitridische Verbindungshalbleiterschicht (1), eine zweite nitridische Verbindungshalbleiterschicht (2), und eine zwischen der ersten (1) und zweiten nitridischen Verbindungshalbleiterschicht (2) angeordnete Zwischenschicht (10),- wobei beginnend mit der ersten nitridischen Verbindungshalbleiterschicht (1) die Zwischenschicht (10) und die zweite nitridische Verbindungshalbleiterschicht (2) in einer Wachstumsrichtung (Z) der Halbleiterschichtenfolge (100) nachfolgend angeordnet sind,- wobei die Zwischenschicht (10) zumindest stellenweise eine von der ersten nitridischen Verbindungshalbleiterschicht (1) verschiedene Gitterkonstante aufweist,- wobei die zweite nitridische Verbindungshalbleiterschicht (2) zu der Zwischenschicht (10) zumindest stellenweise gitterangepasst ist, und- wobei die Zwischenschicht (10) Mikrorisse (11) umfasst und in den Mikrorissen (11) die zweite nitridische Verbindungshalbleiterschicht (2) zumindest stellenweise vorhanden ist.

公开(公告)号：DE10306311A1

公开(公告)日：2004-03-11

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  STREUBEL KLAUS ,  STAUSS PETER ,  HAMPEL MARK

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises an n-doped casing layer (18), a p-doped casing layer (20), an active layer (14) based on InGaAlP arranged between the casing layers, and a diffusion stop layer (16) having a tensioned superlattice arranged between the active layer and the p-doped casing layer.

公开(公告)号：DE10303978A1

公开(公告)日：2003-11-27

申请号：DE10303978

申请日：2003-01-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STAUSS PETER ,  PLOESL ANDREAS

IPC: H01L33/00 ,  H01L33/02 ,  H01S5/02 ,  H01S5/323

Abstract: Semiconductor component comprises a thin film semiconductor body (2) arranged on a support (4) containing germanium. An Independent claim is also included for a process for the production of a semiconductor component.

公开(公告)号：WO2016156312A1

公开(公告)日：2016-10-06

申请号：PCT/EP2016056794

申请日：2016-03-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HIRAI ASAKO ,  MEYER TOBIAS ,  DRECHSEL PHILIPP ,  STAUSS PETER ,  NIRSCHL ANNA ,  GOMEZ-IGLESIAS ALVARO ,  NIEBLING TOBIAS ,  GALLER BASTIAN

IPC: H01L33/06

CPC classification number: H01L33/06

Abstract: In one embodiment the optoelectronic semiconductor chip (1) comprises an active zone with a multiple quantum well structure (3) containing a number of quantum well layers (31) and barrier layers (32) disposed sequentially in an alternating manner in a growth direction (G), each layer extending continuously over the entire multiple quantum well structure (3). When viewed in cross-section parallel to the growth direction (G), the multiple quantum well structure (3) has at least one emission region (41) and a number of transport regions (42) disposed sequentially in an alternating manner in a direction perpendicular to the growth region (G). The quantum well layers (31) and/or the barrier layers (32) in the transport regions (42) are thinner than and/or have a different material composition from those in the emission regions (41).

Abstract translation: 在光电子半导体芯片的实施例（1）包括一个具有多量子阱结构（3），其包括沿着生长方向（G）设置在多个量子阱层（31）和阻挡层（32）的有源区彼此跟随交替和其中的每一个连续延伸超过 整个多量子阱结构（3）延伸。 看到的截面中，以生长方向（G）平行，所述多量子阱结构（3）的至少一个发射区（41）和多个输送区域（42），其交替地跟随在一个方向上相互垂直于生长方向（G）的。 在传送区域（42）的量子阱层（31）和/或所述阻挡层（32）被制造得更薄和/或具有不同的材料组成比在发射区（41）。