公开(公告)号：JPH10144612A

公开(公告)日：1998-05-29

申请号：JP30206996

申请日：1996-11-13

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L21/203 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor device which can deteriorate such a first nitride family-III-V compound semiconductor layer containing In as a GaInN layer when it is necessary to grow a second nitride family-II-V compound semiconductor layer not containing In on the first compound semiconductor layer at a growth temperature higher than the growth temperature than that of the first compound semiconductor layer. SOLUTION: In a method for manufacturing a GaN semiconductor laser, a growth temperature of a p type AlGaN cladding layer 29 and a p type GaN contact layer 30, which are provided above a GaInN active layer 26 and which is necessary to be grown at a growth temperature higher than that of the active layer, is set to be above the growth temperature of the active layer 26 and below 980 deg.C, e.g. between 930 and 960 deg.C. Preferably, prior to growth of the cladding layer 29, an underlying layer is previously covered with a p type AlGaN cap layer 28 which was grown at a growth temperature equal to or lower than the growth temperature of the active layer 26.