Abstract:
PROBLEM TO BE SOLVED: To load the same substrate with a semiconductor element and a micro-electromechanical device by manufacturing the semiconductor element and the micro-mechanical device on the same substrate, and then forming wiring for connecting the semiconductor element and the micro-mechanical device to each other. SOLUTION: This semiconductor compound device 1 includes: a semiconductor element 21 formed on the substrate 11; an insulating film 41 formed on the substrate 11 to cover the semiconductor element 21; the micro-electromechanical device 31 formed on the insulating film 41; and a wiring layer 50 for connecting the semiconductor element 21 and the micro-electromechanical device 31 to each other. The device solves the above problem. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a microoscillator exhibiting excellent resonance characteristics by suppressing variation in central frequency, interference between adjacent oscillator elements, and the like, and to provide a semiconductor device equipped with the microoscillator, and a band filter by that microoscillator. SOLUTION: In the microoscillator, a plurality of beam type first oscillator elements 33 are connected in parallel and a non-resonating beam type second oscillator elements 34 is arranged between adjacent first oscillator elements 33. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To solve the problem that it is impossible to surely prevent the rewriting of personal identification information in a personal identification medium using a conventionally well-known magnetic card or IC card. SOLUTION: This personal identification medium is shaped like a card by embedding an IC chip 3 in the card main body, and the IC chip includes a movable structure part 32 constituted of the aggregate of a plurality of movable parts K1 to K8 configured to operate irreversibly according to a write-in signal inputted from the outside so that the status can be detected as personal identification information after operation. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a micro-machine for a high frequency filter having a high Q value and a higher frequency band. SOLUTION: This micro-machine 20 includes an output electrode 7 placed on a substrate 1, a layer insulation film consisting of a first insulation film 9 and a second insulation film 11 placed on the substrate 1 in a manner to cover the electrode 7, a hole pattern 11a placed on the second insulation film 11 in a manner to reach the electrode 7 and a strip-like oscillator electrode 15 placed on the second insulation film 11 so that the electrode 15 crosses over a space portion A within the hole pattern 11a. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an optical modulating element which has high light efficiency and reliability and an optical device which uses the same, and to provide a manufacturing method for the optical modulating element which can manufacture the optical modulating element at high yield. SOLUTION: The optical modulating element 10 is constituted by arraying ribbon-shaped diffraction parts 20 equipped with reflecting surfaces 16a in parallel along the length. Each diffraction part 20 itself has a reflecting layer 16, a 1st dielectric layer 17, and a 2nd dielectric layer 18 formed on a structure 15 and this part is displaced at right angles to the substrate 11 and functions as a diffracting surface to modulate the angle, intensity, and phase of incident light. The numbers of layers, materials, and thickness of the dielectric layers 17 and 18 are specified in designing while the incidence wavelength and the total stress of the diffraction parts 20 are taken into consideration. Consequently, the reflection factor of the diffraction parts 20 is enhanced to suppress the light absorption and heat generation by the reflecting layers 16 of Al, and the reflecting layers 16 are protected during washing and resist removal.
Abstract:
PROBLEM TO BE SOLVED: To provide a multifunction semiconductor device in which inter-chip alignment is facilitated, effective wiring length between functional chips is shortened, working frequency range is widened, and a plurality of semiconductor chips constitute a single semiconductor device. SOLUTION: A plurality of semiconductor chips, each having a circuit formed therein, are assembled three-dimensionally where a second semiconductor chip 21 is disposed substantially perpendicular to a first semiconductor chip 11, and the first and second semiconductor chips 11 and 21 are connected electrically at a plurality of contacts.
Abstract:
PROBLEM TO BE SOLVED: To suppress transfer of humidity or the like through voids by bonding atomic groups that are more bulky than hydroxyl group to the constituent atoms of a porous inorganic material exposed on the inner wall surface of voids on the surface layer of an insulator film composed of porous inorganic material formed on a substrate. SOLUTION: An opening 13 for forming a plug is formed on an insulator film 11 by plasma etching. By making the insulator film 11 contact a compound that can supply atomic groups that are more bulky than hydroxyl group in a gas form, the atomic groups more bulky than hydroxyl group are bonded to the constituent atoms of a porous inorganic material exposed on the inner wall surface of voids 20 located on a surface layer of the insulator film 11 on the side wall of the opening 13. As a result, the surface layer of the insulator film 11 is transmuted to become close, and incoming and outgoing of gas through voids 20 is suppressed. As a consequence, the defect of poisoned via or the like can be prevented.
Abstract:
PROBLEM TO BE SOLVED: To provide a micro-mechanical switching device with low loss, high isolation, low drive voltage, and short switching time.SOLUTION: A switching device 1a comprises: a drive part including a fixed electrode 2 and a movable electrode 3; a push rod 4 mechanically connected to the movable electrode 3; a movable contact element mechanically connected to one side of the push rod 4; at least one restoring spring 5 mechanically connected to the push rod 4; and signal lines 7a and 7b and ground line 13. In a shunt setup, a contact beam 6 is provided to close and release an ohmic contact between the ground line 13 and the signal lines 7a and 7b. The ground line 13 is provided with at least one contact bar 12 extending through a gap between the signal lines 7a and 7b so that the ohmic contact is formed between the contact beam 6 and the ground line 13.
Abstract:
PROBLEM TO BE SOLVED: To provide a terminal structure of an electric contact capable of stabilizing a contact surface of a contact section and improving reliability of a device, and a contact switch equipped with the terminal structure of an electric contact.SOLUTION: The contact switch 1 has two terminals (movable section 10A and fixed section 10B). An insulating film 12, a base layer 13, an adhesion layer 14, and an electrode 15 are respectively formed in sequence on a substrate 11 (support substrate 17) concerning the movable section 10A and the fixed section 10B. The electrode 15 is provided with a composite material layer 15A wherein a reinforced material such as CNT is distributed into a metal basic material such as an Au, and a metal film 15B for covering at least a part of the composite material layer 15A. Hardness on the surface of the electrode 15 is equalized by covering the composite material layer 15A with the metal film 15B, and a contact surface between the movable section 10A and the fixed section 10B can be stabilized.
Abstract:
PROBLEM TO BE SOLVED: To provide a contact switch which reduces contact resistance and suppresses insertion loss. SOLUTION: The contact switch 1 includes a plurality of fixed contact electrodes 14 arranged in parallel on a substrate 11, a push rod 12 which faces to the plurality of fixed contact electrodes 14, has a plurality of contact beams 12a, and can slide within a face of the substrate 11 along an arrangement direction of the fixed contact electrodes 14, and movable contact electrodes 13 arranged on the contact beams 12a. In accordance with sliding movement of the push rod 12, the fixed contact electrode 14 and the movable contact electrode 13 are switched between in a contact state and in a non-contact state, and a transmission line 15 is mechanically connected and disconnected. A contact structure, in which groups of the fixed contact electrodes 14 and movable contact electrodes 13 (contact pairs 10) are arrayed in parallel, is achieved. While contact of all the contact pairs 10 are simultaneously and collectively conducted, the contact of the respective contact pairs 10 are independent from each other. It becomes easy to make the respective contacts contact approximately evenly at a sufficient contact pressure. COPYRIGHT: (C)2011,JPO&INPIT