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公开(公告)号：JP2002319702A
公开(公告)日：2002-10-31
申请号：JP2001121689
申请日：2001-04-19
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: C30B25/02 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/00 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343
Abstract: PROBLEM TO BE SOLVED: To provide a method by which a nitride semiconductor element having superior characteristics, such as a superior light emitting characteristic, etc., can be manufactured by solving problems, such as the deterioration of an active layer, etc., caused by the growth temperatures of the active layer and nitride semiconductor layers which are laminated upon another after the active layer is grown. SOLUTION: The active layer is vapor phase grown on a substrate at a first growth temperature (T3) and all of the nitride semiconductor layers which are laminated upon another after the active layer is grown are grown at another growth temperature (T4) which is higher than the first temperature (T3) by
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32.发明专利
公开(公告)号：JP2002246649A
公开(公告)日：2002-08-30
申请号：JP2001044832
申请日：2001-02-21
Applicant: SONY CORP
Inventor： DOI MASATO , OKUYAMA HIROYUKI , BIWA TSUYOSHI , OHATA TOYOJI
Abstract: PROBLEM TO BE SOLVED: To improve emission efficiency in a semiconductor light-emitting device for taking out light from a substrate side. SOLUTION: An electrode layer 16 is formed on a p-type semiconductor layer (GaN layer) 14 that is formed on an active layer 13, and a nickel layer 15 is formed as a contact metal layer for achieving ohmic contact having the length of intrusion of light that is generated at the active layer 13 or a thickness that is equal to or less than it between the electrode layer 16 and the p-type semiconductor layer (GaN layer) 14. Since the nickel layer 15 is thin enough reflection efficiency can be improved.
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公开(公告)号：JP2002050580A
公开(公告)日：2002-02-15
申请号：JP2000232821
申请日：2000-08-01
Applicant: SONY CORP
Inventor： BIWA TSUYOSHI , OKUYAMA HIROYUKI , DOI MASATO , OHATA TOYOJI
IPC: C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L33/30 , H01L33/32 , H01S5/323 , H01L33/00
Abstract: PROBLEM TO BE SOLVED: To provide a vapor phase growing method for nitride semiconductor, whereby a uniform crystal layer can be obtained with a high reproducibility by the vapor phase growth technology for gallium nitride compound semiconductors, etc. SOLUTION: The method comprises forming a protective film for obstructing the crystal growth on a substrate, so that a first nitride semiconductor layer is exposed through window regions partly opened through the protective film, starting the selective growth of a second nitride semiconductor layer from the first nitride semiconductor layer at a required growth starting temperature and rising the temperature over the growth starting temperature to continue the crystal growth. A uniform low-temperature grown layer is obtained by the vapor phase growth at a low temperature before temperature rise, and then a high-temperature grown layer is formed to form a uniform and highly reproducible crystal layer which reflects the uniformity of the low-temperature grown layer.
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公开(公告)号：JPH0829802A
公开(公告)日：1996-02-02
申请号：JP16546294
申请日：1994-07-18
Applicant: SONY CORP
Inventor： OHATA TOYOJI
Abstract: PURPOSE:To make it possible to project animation images to be projected as bright images with high accuracy by making efficiency of utilizing luminous fluxes figher by composing the optical modulation material of an optical writing type spatial optical modulator of a monostable type ferroelectric liquid crystal. CONSTITUTION:This animation image projector has an optical writing type spatial optical modulator 1, the so-called light valve, an electric address type writing light source section 2 which executes optical writing to this optical writing type spatial optical modulator 1, a projecting light source section 3 and a projecting optical system 4. The optical modulation material of the optical writing type spatial optical modulator 1 is formed out of a monostable type ferroelectric liquid crystal and in addition, the modulator 1 is not formed in a X, Y electrode wiring structure, etc., but is formed to be of optical writing type spatial optical modulator constitution. The optical images corresponding to the projected animation from the electric address type writing light source section 2 is written into the optical writing type spatial optical modulator 1. The light from the projecting light source section 3 is optically modulated by such optical writing type spatial optical modulator 1 to obtain the projected animation images. These images are projected to a screen via the projecting optical system 4.
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公开(公告)号：JPH077218A
公开(公告)日：1995-01-10
申请号：JP14391093
申请日：1993-06-15
Applicant: SONY CORP
Inventor： IKEDA MASAO , OHATA TOYOJI
Abstract: PURPOSE:To make it possible to achieve continuous room-temperature operation and long-life operation by decreasing the operating voltage of a semiconductor laser comprising II-VI group compound, and obtaining the semiconductor laser in green color or blue color having a low operating voltage. CONSTITUTION:A buffer layer 2 made of p-type ZnSe or p-type ZnSSe is provided on a substrate 1 of p-type GaAs through a buffer layer 11 comprising at least one layer of AlGaInP-based material. A laser structure made of II-VI group compound is constituted thereon.
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Patent Agency Ranking
公开(公告)号：JPH06132608A
公开(公告)日：1994-05-13
申请号：JP28172992
申请日：1992-10-20
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , OHATA TOYOJI , OGAWA MASAMICHI
Abstract: PURPOSE:To provide a semiconductor laser which can realize a low threshold value and a high output. CONSTITUTION:A ridge 2 extending in the direction of a crystallographic axis forms at least a first cladding layer 3, an activated layer 4 and a second cladding layer 5 on a semiconductor substrate 1 formed on a main surface 1S consisting of a crystal face {100}.
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公开(公告)号：JPH06112134A
公开(公告)日：1994-04-22
申请号：JP26003492
申请日：1992-09-29
Applicant: SONY CORP
Inventor： OGAWA MASAMICHI , OHATA TOYOJI , NEMOTO KAZUHIKO
IPC: H01L21/205 , H01L29/04 , H01S5/00 , H01S5/34 , H01S3/18
Abstract: PURPOSE:To obtain a crystalline plane, which is readily utilized as a reflecting mirror surface forming a specified angle with respect to a substrate accurately and easily under the relatively gentle growing conditions. CONSTITUTION:On a semiconductor substrate, whose principal plane is a crystalline plane {100}, a step difference 2, wherein side surface 2A-2D are the crystalline planes {010} and an upper plane 2S surrounded by the side surface 2A and 2B comprise planes that are in parallel with the principal panel, is formed. A semiconductor 2 is subjected to vapor grown on the semiconductor substrate having the step difference. Thus, crystalline plane {110}, which is extending from a part corresponding to an edge 12E of the step difference 2, is grown. With the crystalline plane {110} as the constituting plane, the crystalline plane having the angle 45 deg. with respect to the principal plane is manufactured.
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公开(公告)号：JPH065984A
公开(公告)日：1994-01-14
申请号：JP26225992
申请日：1992-09-30
Applicant: SONY CORP
Inventor： OHATA TOYOJI , OGAWA MASAMICHI , NEMOTO KAZUHIKO
Abstract: PURPOSE:To provide a semiconductor laser which has a low threshold value and can provide higher output by using a distributed reflection type multilayer film in a surface light-emitting laser which takes out laser beams in the horizontal direction to the main surface of a substrate, and to provide the manufacture of such a semiconductor laser. CONSTITUTION:At least an active layer 5 and clad layers 4, 6, are formed on a compound semiconductor substrate 1 having a distributed reflection type multilayer film 2. At least sides 8A, 8B of the active layer 5 are structured as crystal planes {110}.
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公开(公告)号：JPH03220786A
公开(公告)日：1991-09-27
申请号：JP1562090
申请日：1990-01-25
Applicant: SONY CORP
Inventor： OGAWA MASAMICHI , ISHIBASHI AKIRA , OHATA TOYOJI
IPC: H01S5/00
Abstract: PURPOSE:To simplify the manufacturing process by forming a stripe-shaped semiconductor layer whose one side surface is a growing surface and other side surface is a surface that is not grown on a semiconductor substrate, and thereafter epitaxially growing semiconductor layers for forming a laser structure. CONSTITUTION:A semiconductor layer 2 is formed on a semiconductor substrate 1. One side surface of the layer 2 is a growing surface, and the other side surface is a surface that is not grown. Then, semiconductor layers 3-6 for forming a laser structure are epitaxially grown. At this time, the surface that is not grown includes the surface wherein the semiconductor layers 3-6 are grown but the growing thicknesses are very small in addition to the surface where the growth does not occur at all. Thus, the manufacturing process is simplified, and the occurrence of damages in the epitaxially grown semiconductor layers is prevented.
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公开(公告)号：JPS62296588A
公开(公告)日：1987-12-23
申请号：JP14113786
申请日：1986-06-17
Applicant: SONY CORP
Inventor： HONDA KAZUO , HIRATA SHOJI , OHATA TOYOJI
Abstract: PURPOSE:To improve the stability of operation and lengthen life, and to manufacture the title semiconductor laser easily by arranging a distributed feedback means to a striped shape while the surfaces of a base body on both sides of the distributed feedback means to a plane shape. CONSTITUTION:A P-type AlGaAs clad layer 22, a GaAs active layer 23 and an N-type AlGaAs guide layer 24 are grown on a P-type GaAs substrate in an epitaxial manner is succession. A positive type photo-resist layer 32 is applied, the latent images of a diffraction grating are exposed 33 through a holographic exposure method, and lap exposure 34 is executed to the photo-resist layer 32 through the mask of a striped pattern, and developed, thus forming a plurality of rectangular resist masks 35. The guide layer 24 is etched selectively by a proper etchant to shape rib structure 36 while periodic irregularities, a diffraction grating 25, is formed on the surfaces of the ribs along the progressive direction of beams. Surfaces 24a on both sides of rib structure 36 are formed to a plane shape and etched up to thickness, which does not reach the active layer.
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