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    MIS SEMICONDUCTOR DEVICE
    31.
    发明专利
    MIS SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH02271676A

    公开(公告)日：1990-11-06

    申请号：JP9334889

    申请日：1989-04-13

    Applicant: SONY CORP

    Inventor： SHIMADA TAKASHI

    IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

    Abstract: PURPOSE:To prevent junction breakdown from being produced even when a title device is used in an input/output circuit, etc., by providing an electric field concentration electrode in contact, via an insulation film, with a relatively high concentration impurity region in a drain area. CONSTITUTION:An electric field concentration electrode 41 is provided, which makes contact with, via an insulating film 31, with a relatively high concentration impurity region 27. An originally narrow width depletion layer around the relatively high concentration impurity region 27 in a drain region 17 is further narrowed by an electric field concentration electrode 41, and the electric field is concentrated there. Accordingly, even though the drain region 17 includes a relatively low concentration impurity region 44 and the relatively high concentration impurity region 27, junction yield can be produced uniformly along the electric field concentration electric field concentration electrode 41. Hereby, junction breakdown is difficult to be produced even through the device is used in an input/output circuit.

    MANUFACTURE OF SEMICONDUCTOR DEVICE
    32.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH0198246A

    公开(公告)日：1989-04-17

    申请号：JP25662187

    申请日：1987-10-12

    Applicant: SONY CORP

    Inventor： KOBAYASHI KAZUYOSHI ,  SHIMADA TAKASHI

    IPC: H01L21/76 ,  H01L21/316

    Abstract: PURPOSE:To scale down a bird beak generated by thermal oxidation by forming a semiconductor layer difficult to be oxidized more than an insulating film between the insulating film and an anti-oxidizing film on a semiconductor substrate. CONSTITUTION:An SiO2 film 12 is shaped first by thermally oxidizing the surface of an Si substrate 11. A polycrystalline Si film 13, an Si3N4 film 14 and an SiO2 film 19 are formed successively onto the film 12. The SiO2 film 19, the Si3N4 film 14 and the polycrystalline Si film 13 are removed selectively to specified patterns. The ions of an impurity 15 for shaping a channel stopper are implanted under the state. Only the SiO2 film 19 is gotten rid of, heat treatment for, activating the impurity 15 is conducted, and thermal oxidation is performed, using the Si3N4 film 14 as an anti-oxidizing film. Consequently, an SiO2 film 16 as an element isolation region and a channel stopper 17 under the SiO2 film 16 are formed. The Si3N4 film 14 and the polycrystalline Si film 13 are taken off.

    SEMICONDUCTOR DEVICE
    33.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS6459937A

    公开(公告)日：1989-03-07

    申请号：JP21757887

    申请日：1987-08-31

    Applicant: SONY CORP

    Inventor： KOBAYASHI KAZUYOSHI ,  SUGANO YUKIYASU ,  SHIMADA TAKASHI

    IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/786

    Abstract: PURPOSE:To prevent the generation of an Al spike, an Si nodule, a stress migration, an electromigration and so on by a method wherein a first layer is formed of a composite layer consisting of a Ti layer, a TiN layer and an Al-Si layer or an Al layer and a second layer and succeeding layers are formed of a composite layer consisting of a Ti layer and an Al-Si layer or an Al layer. CONSTITUTION:An interlayer film 7 is formed and thereafter, contact holes 8a and 8b are formed. After this, an ion-implantation for compensating diffusion is performed to form n regions 3a and 4a. Then, a composite layer consisting of a Ti layer 10, a TiN layer 11 and an Al-Si layer 12 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on the composite layer to form a first wiring layer 9. Then, after an interlayer film 13 is formed, contact holes 14a and 14b are formed. After this, a composite layer consisting of a Ti layer 15 and an Al-Si layer 16 (or an Al layer) is formed on the whole surface by deposition. After this, a patterning is performed on this composite layer to form a second wiring layer 17.

    MANUFACTURE OF SOLID-STATE IMAGE PICK-UP ELEMENT
    38.
    发明专利
    MANUFACTURE OF SOLID-STATE IMAGE PICK-UP ELEMENT 失效

    公开(公告)号：JPS607766A

    公开(公告)日：1985-01-16

    申请号：JP11547683

    申请日：1983-06-27

    Applicant: SONY CORP

    Inventor： SHIMADA TAKASHI

    IPC: H01L27/148 ,  H01L29/76 ,  H01L29/772 ,  H01L27/14

    Abstract: PURPOSE:To obtain an interline transfer type CCD with an excellent pattern accuracy by a method wherein a one conductive type island domain is formed in a surface layer of a semiconductor substrate by an ion-implantation and the whole surface including the island domain is covered with a one conductive type epitaxial layer and a vertical transfer resistor part is formed in a part of the epitaxial layer corresponding to the island domain and a sensor part is formed in another part of the epitaxial layer. CONSTITUTION:An SiO2 film 22 is formed on a surface of a P type Si substrate 21 as a mask for an ion-implantation. A photoresist layer 23 of a prescribed pattern is formed and a part of the film 22 corresponding to a vertical transfer resitor part is removed. A P type domain 24a is formed in the surface layer of the exposed part of the substrate 21 by an ion-implantaion. The layer 23 and the layer 22 are removed and a P type layer 31 is formed by an epitaxial growth and a part of the layer 31 corresponding to the domain 24a is converted into an N type layer 26 as a resistor part. Another part of the layer 31 between zones where the domain 24a and the layer 26 are laminated is used as a sensor part 27. With this constitution, low energy ions can be used and the thickness of the mask can be made thin.

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