公开(公告)号：JPS55121113A

公开(公告)日：1980-09-18

申请号：JP2901979

申请日：1979-03-12

Applicant: SHARP KK ,  HAMAKAWA YOSHIHIRO

Inventor： SHIGEMASA JIYUNICHIROU ,  YOSHIKAWA TOSHIBUMI ,  HAMAKAWA YOSHIHIRO

IPC: G01B11/00 ,  G01D5/26 ,  G01L5/00

Abstract: PURPOSE:To detect a relative distance to a reflecting plate by the output of a photo detecting element by providing light emitting elements and photo detectors, and the reflecting plate whose relative distances are variable, and then by previously making a light output correspond to the distance. CONSTITUTION:Light emitted from light emitting element 11 provided to substrate 10 is reflected by reflecting plate 12 and strikes photo detector 13 fitted to substrate 10, where it is detected as a light output. This light output is outputted as value corresponding to the discrete distance between substrate 10 and reflecting plate 12, and consequently the distance between substrate 10 and reflecting plate 12 can be detected by programming the relation between the light output and distance in a memory unit. Further, the elastic coefficient of support body 14, when formed of an elastic body, is previously known, so that external force F can be detected by detecting the distance to the reflecting plate while external force F is in effect.

公开(公告)号：JPS5546556A

公开(公告)日：1980-04-01

申请号：JP12021278

申请日：1978-09-28

Applicant: SHARP KK

Inventor： TANI YOSHIHEI ,  YOSHIKAWA TOSHIBUMI ,  ASOU AKIRA ,  KAHANABE HITOSHI

IPC: G01J1/44 ,  H01L31/10

Abstract: PURPOSE:To simultaneously detect the wavelength and output of light from a light source by employing a novel light semiconductor element in a photo detector for managing the illuminating state of the light source used to inspect the characteristics of a light recieving element. CONSTITUTION:PN junctions 3 and 4 are superimposed on a P-type silicon substrate 2. Operational amplifiers A1, A2 connected with logarithmic compression diodes receive currents IPD1, IPD2 based on the junctions 3 and 4 by the light from a light source 10, and output logIPD1 and logIPD2. The outputs from the amplifiers A1 and A2 are applied both to a substractor 8 and an adder 9. The substrator 8 produces a current ratio output signal determined in a unified manner with respect to its wavelength lambda to thereby notify the wavelength lambda. The adder 9 produces an output signal of current product to thereby notify a light intensity. That is, one light semiconductor can simultaneously detect the wavelength and output of the illuminated light. When the wavelength and output of the light are utilized, the photo detector can control the power supply amount and slit gap to the light source 10 to thereby control the illuminating condition to an article to be illuminated.

公开(公告)号：JPS5526661A

公开(公告)日：1980-02-26

申请号：JP9968678

申请日：1978-08-15

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  TANI YOSHIHEI ,  ASOU AKIRA ,  KAWAKUNIBE HITOSHI

IPC: H01L31/10

Abstract: PURPOSE:To lower the spectral sensitivity characteristic by deeply pentrably long wavelength by forming PN iuntions of different depth in a semiconductor substrate and short-circuitting the deeper PN juction at the outside. CONSTITUTION:A P type region 2 is formed by diffusion in a N-type Si substrate 1, a shallow N -type region 3 is formed in the region 2 and a N -type region 4 for an ohmic contact is provided in the end of the substrate 1. A PN-junction 5 is occurred between the region 2 and substrate 1 to form a first photo diode PD1 and a PN junction 6 is produced between the regions 2 and 3 to form a second photo diode PD2. Subsequently, the full surface is covered with a light transmitting insulation layer 7 for preventing a reflection, an opening window is proveded, an electrode 8 to 10 are attached in the regions 2, 3 and 4 and the intermediate line between the electrodes 8 and 9 are jointed by an Al wiring 11. According to such a process, the light output current due to the long wavelength generated in the diode PD1 at the deeper position is short-circuited by the electrodes 8 and 9 and only the light output current of a short wavelength generated in the diode PD1 at the shallow position can be taken out.

公开(公告)号：JP2003204076A

公开(公告)日：2003-07-18

申请号：JP2002291712

申请日：2002-10-03

Applicant: SHARP KK

Inventor： TAKIMOTO TAKAHIRO ,  OKUBO ISAMU ,  KUBO MASARU ,  NAKAMURA HIRONORI ,  FUKUSHIMA TOSHIHIKO ,  YOSHIKAWA TOSHIBUMI

IPC: H01L27/14 ,  G01J1/02 ,  G11B7/00 ,  G11B7/13 ,  H01L31/00 ,  H01L31/06 ,  H01L31/10 ,  H01L31/103

Abstract: PROBLEM TO BE SOLVED: To reduce the number of light carriers which occur in a region deeper than a depletion layer, take time to move to the vicinity of the depletion layer, and are slow in response speed. SOLUTION: The intensity of the electric field contained in a region near the peak value of the impurity concentration of a P + -type embedded diffusion layer 2 is intensified by narrowing the region by forming a P-N junction region in the interface between an N + -type semiconductor substrate 1 and the diffusion layer 2. Consequently, light carriers which occur in this region and have long moving time and light carriers which occur in a deep region in the semiconductor substrate 1 are prevented from reaching a P-N junction region formed in the interface between a N-type epitaxial layer 4 and a high-resistivity P-type epitaxial layer 3 by a potential barrier existing in the P-N junction area formed in the interface between the substrate 1 and the diffusion layer 2. Therefore, the light carriers are prevented from contributing to photoelectric currents. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2000068549A

公开(公告)日：2000-03-03

申请号：JP23986798

申请日：1998-08-26

Applicant: SHARP KK

Inventor： NAKAJIMA SOJI ,  YOSHIKAWA TOSHIBUMI ,  YASUDA YOSHIKI

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode capable of improving, e.g. the CMR characteristics in the case of mounting a photocoupler by encircling almost the whole periphery near a base electrode with metallic layers in an emitter potential. SOLUTION: A phototransistor forming a Schottky barrier diode between the base and collector by the contact of the exposed region 11 with the base electrode 6 on a semiconductor substrate 1 composing a collector layer exposed to the surface is surrounded by the metallic layers 7, 8, 9 in an emitter potential almost at the whole periphery of the base electrode 6.

公开(公告)号：JPH11233812A

公开(公告)日：1999-08-27

申请号：JP3123698

申请日：1998-02-13

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  KOTAKE MASATOSHI ,  MAKIYA KATSUNORI ,  HASEGAWA YASUSHI ,  MITSUI MASAYUKI ,  YASUDA YOSHIKI ,  MOTOYAMA KIYOTO

IPC: H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide a photocoupler capable of reducing the dispersion in the ratio between the photodcurrent of an outputting photodetector photodetected from a common light emitting element and the photocurrent of a monitoring photodetector. SOLUTION: A photocoupler comprises a light emitting element 1, an outputting photodetector 2b, and a monitoring photodetector 2a of the light emitting element 1 in a flare stopping resin body 4 for optically coupling the light emitting element 1, the outputting photodetector 2b and the monitoring photodetector 2a. In such a constitution, the light emitting element 1, the outputting photodetector 2b and the monitoring photodetector 2a are oppositely arranged.

公开(公告)号：JPH0481872B2

公开(公告)日：1992-12-25

申请号：JP9802884

申请日：1984-05-15

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  KUBO MASARU ,  KAGISAWA ATSUSHI ,  NISHIMOTO NOBUHIRO

IPC: H01L31/12 ,  H01L27/144 ,  H01L31/10

公开(公告)号：JPH03132071A

公开(公告)日：1991-06-05

申请号：JP27093289

申请日：1989-10-18

Applicant: SHARP KK

Inventor： KATO NOBUYUKI ,  MARIYAMA MITSURU ,  YOSHIKAWA TOSHIBUMI

IPC: H01L29/74 ,  H01L29/747 ,  H01L31/111

Abstract: PURPOSE:To improve commutation characteristic, light sensitivity, and dV/dt characteristic by providing a gap where a large number of diffusions are not provided at an N diffusion region which is formed on the rear surface of an N-type substrate. CONSTITUTION:An N-type diffusion region on the rear surface of an N-type substrate 1 is formed in grid shape and no diffusion is provided at a gap between each grid. Anode diffusion regions A1 and A2 and P gate diffusion regions P1 and P2 are formed as boron an impurity simultaneously on the surface of the substate 1. Also, cathode diffusion regions K1 and K2 are formed within the P gate diffusion regions P1 and P2 with P, Sb, As, etc., as impurities. Then, an Al film is deposited on the surface of a chip and selective etching is made for forming the surface electrode wiring.

公开(公告)号：JPH03108765A

公开(公告)日：1991-05-08

申请号：JP24669789

申请日：1989-09-22

Applicant: SHARP KK

Inventor： MARIYAMA MITSURU ,  YOSHIKAWA TOSHIBUMI

IPC: H01L29/74 ,  H01L29/747

Abstract: PURPOSE:To obtain hFE and dV/dt of necessary values and to gain necessary commutation characteristic by setting impurity concentration of a layer formed on the rear surface for imparting a BSF effect lower than that of a cathode and higher than that of a chip. CONSTITUTION:Anode diffused regions A1, A2 formed on one side surface of a semiconductor substrate 1, P-type gate diffused regions P1, P2, cathode diffused regions K1, K2 formed in the regions P1, P2, and a layer 2 formed on the other surface of the substrate 1 for imparting a BSF effect are provided. The impurity concentration of the layer 2 is set lower than those of the regions K1, K2 and higher than that of the substrate 1. For example, phosphorus of lower concentration than that of cathode diffusion is implanted to the rear surface of a N-type substrate 1 to form a N-type region 2 on the whole surface. The phosphorus concentration of the region 2 is so selected to a suitable value as to obtain optimum hFE, dV/dt, commutation characteristic for a necessary semiconductor element according to priority sequence.

公开(公告)号：JPH0329193B2

公开(公告)日：1991-04-23

申请号：JP18208184

申请日：1984-08-29

Applicant: SHARP KK

Inventor： YOSHIKAWA TOSHIBUMI ,  SUZUKI HIROSHI

IPC: H01L31/10 ,  H01L31/11