公开(公告)号：US20080093694A1

公开(公告)日：2008-04-24

申请号：US12001289

申请日：2007-12-10

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schafer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schafer

IPC: H01L29/02 ,  H01L21/02

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract translation: 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生中孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

公开(公告)号：US07306966B2

公开(公告)日：2007-12-11

申请号：US10486182

申请日：2002-07-25

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Thorsten Pannek ,  Frank Schäfer

IPC: H01L21/00

CPC classification number: B81C1/00182 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract translation: 在制造具有半导体衬底的半导体部件的方法中，制造平坦的多孔隔膜层和多孔隔膜层下方的空腔，以形成用于部件的无支撑结构。 在第一种方法中，半导体衬底可以在膜片区域中接收不同于空腔的掺杂。 这允许产生不同的孔径和/或孔隙率，其用于制造用于改善蚀刻气体输送的空腔。 此外，可以在隔膜区域中产生介孔，并且可以在将要成为空腔区域的地方制造纳米孔作为辅助结构。

公开(公告)号：US20070019922A1

公开(公告)日：2007-01-25

申请号：US11491047

申请日：2006-07-21

Applicant: Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey Sampsell

Inventor： Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey Sampsell

IPC: G02B6/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/0136 ,  G02B6/3584 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.

Abstract translation: 具有由牺牲材料形成的支撑结构的微机电系统装置，该牺牲材料选择性地用掺杂剂材料扩散或由选择性氧化的金属牺牲材料形成。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，其由由扩散或氧化的牺牲材料形成的支撑结构支撑。

公开(公告)号：US06639289B1

公开(公告)日：2003-10-28

申请号：US09645733

申请日：2000-08-24

Applicant: Ken Maxwell Hays

Inventor： Ken Maxwell Hays

IPC: H01L2984

CPC classification number: B81C1/00595 ,  B81B2201/0242 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2201/0191 ,  B81C2203/031

Abstract: The method of the present invention provides a process for manufacturing MEMS devices having more precisely defined mechanical and/or electromechanical members. The method of the present invention begins by providing a partially sacrificial substrate and a support substrate. In order to space the mechanical and/or electromechanical members of the resulting MEMS device above the support substrate, mesas are formed on the support substrate. By forming the mesas on the support substrate instead of the partially sacrificial substrate, the mechanical and/or electromechanical members can be more precisely formed from the partially sacrificial substrate since the inner surface of the partially sacrificial substrate is not etched and therefore remains planar. As such, trenches can be precisely etched through the :planar inner surface of the partially sacrificial substrate to define mechanical and/or electromechanical members of the MEMS device. The present invention also provides an improved MEMS device, such as an improved gyroscope, that includes more precisely and reliably defined mechanical and/or electromechanical members.

Abstract translation: 本发明的方法提供了一种用于制造具有更精确定义的机械和/或机电构件的MEMS装置的方法。 本发明的方法开始于提供部分牺牲衬底和支撑衬底。 为了将所得MEMS器件的机械和/或机电部件放置在支撑基板上方，台面形成在支撑基板上。 通过在支撑衬底上形成台面而不是部分牺牲衬底，可以从部分牺牲衬底更精确地形成机械和/或机电构件，因为部分牺牲衬底的内表面没有被蚀刻并因此保持平面。 这样，可以通过部分牺牲衬底的平面内表面精确地蚀刻沟槽，以限定MEMS器件的机械和/或机电部件。 本发明还提供了一种改进的MEMS器件，例如改进的陀螺仪，其包括更准确且可靠地定义的机械和/或机电元件。

公开(公告)号：US20030127699A1

公开(公告)日：2003-07-10

申请号：US10328661

申请日：2002-12-23

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: H01L021/00

CPC classification number: B81C1/0069 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2201/0139

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

Abstract translation: 在制造具有半导体材料基板的隔膜传感器单元的方法中，产生用于形成用于至少一个传感器的传感器元件结构的隔膜下方的平坦隔膜和隔热绝缘孔。 由限定传感器元件结构的特定区域中的由半导体材料制成的衬底接收与周围半导体材料的故意不同的掺杂，多孔半导体材料是由掺杂区域之间的半导体材料部分和半导体材料 在半导体中的阱区域被多孔化并且在传感器元件结构的部分被去除和/或变得多孔的情况下。

公开(公告)号：US06521313B1

公开(公告)日：2003-02-18

申请号：US10020353

申请日：2001-12-12

Applicant: Hans Artmann ,  Thorsten Pannek

Inventor： Hans Artmann ,  Thorsten Pannek

IPC: H01L2100

CPC classification number: B81B3/0081 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0136 ,  Y10T428/17

Abstract: In a method for producing a diaphragm sensor unit having a semiconductor material substrate, a flat diaphragm and an insulating well for thermal insulation below the diaphragm are generated, for the formation of sensor element structures for at least one sensor. The substrate, made of semiconductor material, in a specified region, which defines sensor element structures, receives a deliberately different doping from the surrounding semiconductor material, that porous semiconductor material is generated from semiconductor material sections between the regions distinguished by doping, and semiconductor material in the well region under semiconductor is rendered porous and under parts of the sensor element structure is removed and/or rendered porous.

公开(公告)号：US6361331B2

公开(公告)日：2002-03-26

申请号：US92360001

申请日：2001-08-06

Applicant: XEROX CORP

Inventor： FORK DAVID KIRTLAND ,  HO JACKSON ,  LAU RACHEL KING-HA ,  LU JENGPING

IPC: B81B3/00 ,  G01R1/067 ,  G01R1/073 ,  G01R3/00 ,  H01L23/498 ,  H01R4/48 ,  H01R12/00 ,  H01R12/57 ,  H05K3/40 ,  H01R9/09

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.

Abstract translation: 通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。 具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。 然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。 当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。 当释放材料不导电时，形成金属带以将弹簧金属指连接到接触垫或金属通孔，并且还将弹簧金属指状物进一步锚定到基底。

公开(公告)号：US20020013070A1

公开(公告)日：2002-01-31

申请号：US09923600

申请日：2001-08-06

Applicant: Xerox Corporation

Inventor： David K. Fork ,  Jackson Ho ,  Rachel King-ha Lau ,  JengPing Lu

IPC: H05K001/00

CPC classification number: G01R1/06716 ,  B81B2203/0118 ,  B81C1/00484 ,  B81C2201/0136 ,  B81C2203/058 ,  G01R1/06727 ,  G01R1/07342 ,  G01R3/00 ,  H01L23/49811 ,  H01L2924/0002 ,  H01R4/48 ,  H01R12/57 ,  H05K3/4092 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/4914 ,  H01L2924/00

Abstract: Efficient methods for lithographically fabricating spring structures onto a substrate containing contact pads or metal vias by forming both the spring metal and release material layers using a single mask. Specifically, a pad of release material is self-aligned to the spring metal finger using a photoresist mask or a plated metal pattern, or using lift-off processing techniques. A release mask is then used to release the spring metal finger while retaining a portion of the release material that secures the anchor portion of the spring metal finger to the substrate. When the release material is electrically conductive (e.g., titanium), this release material portion is positioned directly over the contact pad or metal via, and acts as a conduit to the spring metal finger in the completed spring structure. When the release material is non-conductive, a metal strap is formed to connect the spring metal finger to the contact pad or metal via, and also to further anchor the spring metal finger to the substrate.

Abstract translation: 通过使用单个掩模通过形成弹簧金属和释放材料层来将含有接触垫或金属通孔的弹性结构光刻制造到衬底上的有效方法。 具体地说，使用光致抗蚀剂掩模或电镀金属图案或使用剥离处理技术，释放材料垫与弹簧金属手指自对准。 然后使用释放掩模释放弹簧金属指，同时保持将弹簧金属指的锚固部分固定到基底的释放材料的一部分。 当释放材料是导电的（例如钛）时，该释放材料部分直接位于接触垫或金属通孔上方，并且用作在完成的弹簧结构中的弹簧金属指的导管。 当释放材料不导电时，形成金属带以将弹簧金属指连接到接触垫或金属通孔，并且还将弹簧金属指状物进一步锚定到基底。

公开(公告)号：US5674406A

公开(公告)日：1997-10-07

申请号：US332839

申请日：1994-11-01

Applicant: Jong-Hyun Lee

Inventor： Jong-Hyun Lee

IPC: H01L21/3063 ,  B81B3/00 ,  H01L21/20 ,  H01L21/302 ,  H01L21/308 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

CPC classification number: B81B3/0051 ,  B81C1/00595 ,  B81C2201/0136 ,  Y10S438/96

Abstract: A stopper manufacturing method of a silicon micromachining structure comping steps of growing an oxidized film on a n-type substrate; opening a n.sup.+ -diffusion window by the photo-lithography through first selective diffusion and forming a n.sup.+ -diffusion region using n-type impurity sources; forming a n.sup.+ diffusion region by the depth 0.5 to 5 .mu.m on the portion subject to form a stopper through the secondary diffusion; removing the oxidized film and growing a n-type silicon epitaxial layer on the front surface of the substrate; etching the n-type silicon epitaxial layer, selectively, exposing the n.sup.+ -layer and depositing a porous silicon layer in HF solution by the anodic reaction; and etching the porous silicon layer away in etching solution to form a microstructure, thereby preventing the side etching and the breaking down of the microstructure by the exterior shock.

Abstract translation: 一种硅微加工结构的制动器制造方法，包括在n型基板上生长氧化膜的步骤; 通过第一选择性扩散通过光刻打开n +扩散窗，并使用n型杂质源形成n +扩散区; 在通过二次扩散形成塞子的部分上形成0.5〜5μm的深度的n +扩散区域; 去除所述氧化膜并在所述衬底的前表面上生长n型硅外延层; 蚀刻n型硅外延层，选择性地暴露n +层，并通过阳极反应在HF溶液中沉积多孔硅层; 并且在蚀刻溶液中蚀刻多孔硅层以形成微观结构，从而防止由外部冲击引起的侧面蚀刻和微结构的破坏。

公开(公告)号：US4614119A

公开(公告)日：1986-09-30

申请号：US709870

申请日：1985-03-08

Applicant: Paul M. Zavracky ,  Stephen D. Senturia ,  Richard H. Morrison, Jr.

Inventor： Paul M. Zavracky ,  Stephen D. Senturia ,  Richard H. Morrison, Jr.

IPC: B81C1/00 ,  G01L9/00 ,  H01L21/20 ,  G01L11/00 ,  B44C1/22 ,  C23F1/02 ,  H01L21/306

CPC classification number: B81C1/0015 ,  G01L9/002 ,  H01L21/2007 ,  B81C2201/0136 ,  B81C2201/019

Abstract: A microminiature resonant hollow beam sensor is manufactured by micromachining and microfabrication techniques. Specifically, a sensor is formed by etching troughs in a pair of silicon substrates, joining the substrates face-to-face, and etching away unwanted material to free the resonant hollow beam sensors.

Abstract translation: 微型共振空心光束传感器通过微加工和微细加工技术制造。 具体地，通过在一对硅衬底中蚀刻槽形成传感器，将衬底面对面地接合，并且蚀刻掉不想要的材料以释放共振中空束传感器。