公开(公告)号：US20070170530A1

公开(公告)日：2007-07-26

申请号：US11545113

申请日：2006-10-06

Applicant: Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L29/84 ,  H01L21/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

公开(公告)号：WO2015189046A1

公开(公告)日：2015-12-17

申请号：PCT/EP2015/061943

申请日：2015-05-29

Applicant: ROBERT BOSCH GMBH

Inventor： BENDES, David

IPC: B81B7/00

CPC classification number: B81B7/0016 ,  B81B2203/0118 ,  B81B2203/053 ,  B81B2207/015 ,  B81C1/00682 ,  B81C2201/0171

Abstract: Mikromechanische Struktur (100), aufweisend: wenigstens einen elastisch deformierbaren ersten Bereich (10), der wenigstens abschnittsweise einen definiert piezoelektrisch dotierten zweiten Bereich (10a) aufweist; wenigstens einen vierten Bereich (30), in den die im zweiten Bereich (10a) generierten elektrischen Ladungen leitbar sind; und wenigstens einen mit dem zweiten und dem vierten Bereich (10a, 30) elektrisch verbundenen dritten Bereich (20), in welchem ein durchfließender elektrischer Strom in thermische Energie umwandelbar ist.

Abstract translation: 具有至少一个可弹性变形的第一区域（10），其至少部分地限定一个压电掺杂的第二区（10a）;微机械结构（100）包括 至少第四区域（30），其中，所述在所述第二区（10a）中产生的电荷被进行; 和至少一个电连接到所述第二和第四区（10a，30），第三区域（20），其中流过的电流可以被转换成热能。

公开(公告)号：WO2009075650A1

公开(公告)日：2009-06-18

申请号：PCT/SG2008/000319

申请日：2008-08-27

Applicant: NANYANG POLYTECHNIC ,  ZURUZI, Abu Samah

Inventor： ZURUZI, Abu Samah

IPC: B81C1/00 ,  C23C16/04 ,  H01L21/22

CPC classification number: B81C1/00698 ,  B81B2201/0214 ,  B81B2201/058 ,  B81C1/00206 ,  B81C2201/0171 ,  G01N33/0024

Abstract: A method of doping at least one element in an array of elements on a substrate is disclosed. The method comprises providing at least one microfluidic channel passing from a first location external of the at least one element to a second location in fiuidic communication with the at least one element. A dopant fluid is passed through the at least one microfluidic channel to the at least one element for doping the at least one element. A corresponding apparatus is also disclosed.

Abstract translation: 公开了一种在衬底上的元件阵列中掺杂至少一种元素的方法。 该方法包括提供至少一个从至少一个元件外部的第一位置通过至少与一个元件流体连通的第二位置的微流体通道。 掺杂剂流体通过至少一个微流体通道至至少一个元件以掺杂至少一个元件。 还公开了相应的装置。

公开(公告)号：WO2007087021A3

公开(公告)日：2007-11-29

申请号：PCT/US2006047049

申请日：2006-12-08

Applicant: SITIME CORP ,  PARTRIDGE AARON ,  LUTZ MARKUS ,  GUPTA PAVAN

Inventor： PARTRIDGE AARON ,  LUTZ MARKUS ,  GUPTA PAVAN

IPC: H01L21/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract translation: 这里描述和说明了许多发明。 在一个方面中，本发明涉及封装和制造机电结构或元件（例如，加速度计，陀螺仪或其它换能器（例如，压力传感器，应变传感器，触觉传感器，磁性传感器和等）的装置，系统和/ /或温度传感器），滤波器或谐振器。 制造或制造本发明的微机电系统以及由此制造的系统采用晶片键合封装技术。

公开(公告)号：WO2019033036A1

公开(公告)日：2019-02-14

申请号：PCT/US2018/046324

申请日：2018-08-10

Applicant: KIONIX, INC.

Inventor： HELLER, Martin

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81C1/00095 ,  B81C2201/0109 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2201/0171 ,  B81C2201/0178

Abstract: A method of processing a semiconductor substrate having a first conductivity type includes, in part, forming a first implant region of a second conductivity type in the semiconductor substrate where the first implant region is characterized by a first depth, forming a second implant region of the first conductivity type in the semiconductor substrate where the second implant region is characterized by a second depth smaller than the first depth, forming a porous layer within the semiconductor substrate where the porous layer is adjacent the first implant region, and growing an epitaxial layer on the semiconductor substrate thereby causing the porous layer to collapse and form a cavity.

公开(公告)号：WO2014179340A3

公开(公告)日：2014-12-24

申请号：PCT/US2014035920

申请日：2014-04-29

Applicant: UNIV NORTH CAROLINA

Inventor： CAHOON JAMES ,  CHRISTESEN JOSEPH ,  PINION CHRISTOPHER

IPC: H01L21/027 ,  H01L21/205

CPC classification number: H01L29/0673 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C1/0015 ,  B81C2201/013 ,  B81C2201/0171 ,  B81C2201/0176 ,  G01Q60/38 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/283 ,  H01L21/30604 ,  H01L29/16 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/09 ,  Y02E10/50

Abstract: Methods of chemically encoding high-resolution shapes in silicon nanowires during metal nanoparticle catalyzed vapor-liquid-solid growth or vapor-solid-solid growth are provided. In situ phosphorus or boron doping of the silicon nanowires can be controlled during the growth of the silicon nanowires such that high-resolution shapes can be etched along a growth axis on the silicon nanowires. Nanowires with an encoded morphology can have high-resolution shapes with a size resolution of about 1,000 nm to about 10 nm and comprise geometrical shapes, conical profiles, nanogaps and gratings.

Abstract translation: 提供了在金属纳米颗粒催化的气 - 液 - 固 - 固生长或气 - 固 - 固生长期间在硅纳米线中化学编码高分辨率形状的方法。 可以在硅纳米线的生长期间控制硅纳米线的原位磷或硼掺杂，使得可以沿硅纳米线上的生长轴蚀刻高分辨率形状。 具有编码形态的纳米线可以具有约1000nm至约10nm的尺寸分辨率的高分辨率形状，并且包括几何形状，锥形轮廓，纳米光栅和光栅。

公开(公告)号：WO2007087021A2

公开(公告)日：2007-08-02

申请号：PCT/US2006/047049

申请日：2006-12-08

Applicant: SITIME CORPORATION ,  PARTRIDGE, Aaron ,  LUTZ, Markus ,  GUPTA, Pavan

Inventor： PARTRIDGE, Aaron ,  LUTZ, Markus ,  GUPTA, Pavan

IPC: H01L29/84

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, • gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及包封和制造机电结构或元件的装置，系统和/或方法，例如加速度计，陀螺仪或其他换能器（例如，压力传感器，应变传感器，触觉传感器，磁传感器和 /或温度传感器），滤波器或谐振器。 本发明的制造或制造微机电系统及其制造的系统采用晶片接合封装技术。

公开(公告)号：KR1020100123851A

公开(公告)日：2010-11-25

申请号：KR1020107019098

申请日：2008-01-30

Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.

Inventor： 왕,시-유안 ,  탄,마이클,렌느타이

IPC: H01L23/48 ,  H01L29/06 ,  B82B1/00 ,  C23C16/00

CPC classification number: B81C1/00142 ,  B81C2201/0171 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L31/035281 ,  H01L31/105 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: 나노구조(10, 10', 10", 10''')는 높은 도전성의 마이크로 결정층(18), 바이폴라 나노와이어(16) 및 다른 층(18, 30)을 포함한다. 높은 도전성의 마이크로 결정층(18)은 마이크로 결정 재료 및 금속을 포함한다. 바이폴라 나노와이어(16)는 높은 도전성의 마이크로 결정층(18)에 부착된 한 단부 및 다른 층(18, 30)에 부착된 다른 단부를 갖는다.

公开(公告)号：KR101434238B1

公开(公告)日：2014-08-26

申请号：KR1020107019098

申请日：2008-01-30

Applicant: 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피.

Inventor： 왕,시-유안 ,  탄,마이클,렌느타이

IPC: H01L23/48 ,  H01L29/06 ,  B82B1/00 ,  C23C16/00

CPC classification number: B81C1/00142 ,  B81C2201/0171 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L31/035281 ,  H01L31/105 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: 나노구조(10, 10', 10", 10''')는 높은 도전성의 마이크로 결정층(18), 바이폴라 나노와이어(16) 및 다른 층(18, 30)을 포함한다. 높은 도전성의 마이크로 결정층(18)은 마이크로 결정 재료 및 금속을 포함한다. 바이폴라 나노와이어(16)는 높은 도전성의 마이크로 결정층(18)에 부착된 한 단부 및 다른 층(18, 30)에 부착된 다른 단부를 갖는다.

公开(公告)号：US20170225943A1

公开(公告)日：2017-08-10

申请号：US15317646

申请日：2015-05-29

Applicant: Robert Bosch GmbH

Inventor： David Bendes

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0016 ,  B81B2203/0118 ,  B81B2203/053 ,  B81B2207/015 ,  B81C1/00682 ,  B81C2201/0171

Abstract: A micromechanical structure is described, including: at least one elastically deformable first area, which includes a defined piezoelectrically doped second area, at least in sections; at least one fourth area, into which the electrical charges generated in the second area may be conducted; and at least one third area connected electrically to the second and fourth area, in which an electrical current flowing through is convertible into thermal energy.