Abstract:
A nonlinear optical silica material mainly consisting of SiO 2 -GeO 2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge-O bonds and one Ge-H (or Ge-X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge-H (or Ge-X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.
Abstract:
A nonlinear optical silica material mainly consisting of SiO 2 -GeO 2 to which hydrogen or halogen element X is added. Oxygen bonded to Ge contained in the nonlinear optical silica material is replaced by H or X, and one Ge has two Ge-O bonds and one Ge-H (or Ge-X) bond at Ge· points where nonlinearity is exhibited in the silica material. The Ge-H (or Ge-X) bond does not relate to a crystal network, so that when the polarity is oriented in order to exhibit nonlinearity at Ge·, an electric field to be applied can be lowered, and when a optical semiconductor hybrid element or the like is produced, other portions of the semiconductor elements can be prevented from being broken or degraded in performance. An insulating film can be interposed between the semiconductor substrate and the nonlinear optical silica film to prevent undesired impurities from dispersing into the semiconductor substrate and other elements and preventing a defect from being caused in the crystal of the substrate due to the silica film.
Abstract:
PROBLEM TO BE SOLVED: To provide an optical fiber which is suitably used as an optical transmission path of an optical communication system and can improve an OSNR.SOLUTION: In an optical fiber which has a core portion and a cladding portion, when an effective cross section is represented by Aeff and a mode field diameter is represented by MFD, a k value represented by k=4Aeff/(πMFD) is 1.08 or more, wavelength dispersion is +19.0 ps/nm/km or more and +21.9 ps/nm/km or less, and the mode field diameter MFD is 10.3 μm or more and 13.0 μm or less, at a wavelength of 1,550 nm. When a position in the radial direction of which a refractive index becomes the minimum value Nin the core portion is represented by r, a position in the radial direction of which a refractive index becomes the maximum value Nin the core portion is represented by r, and a radius of the core portion is represented by r, the relationship becomes r
Abstract:
Quartz glass body has a glass structure essentially without oxygen defect sites and a base transmission of at least 80% in the wavelength region of 155 - 250 nm at a through radiation length of 10 mm. The relative change of the base transmission lies at a maximum of one percent over the utilizable surface of the body. An Independent claim is also included for a process for the production of a quartz glass body comprising hydrolyzing a silicon compound in a flame producing fine quartz glass particles; depositing the particles onto a support forming a porous body; and heat treating the body in two steps at 850-1600 degrees C, the last step comprising sintering at 1300-1600 degrees C in an atmosphere containing hydrogen or oxygen as a non-ignitable mixture.
Abstract:
PURPOSE:To obtain quartz glass having improved heat resistance with few air bubbles, by charging a dry gel into a sintering furnace and a halide or ammonia compound together in the sol-gel method using a metal alkoxide as a raw material. CONSTITUTION:At least a metal alkoxide, e.g. silicon ethoxide, or ultrafine powdery silica as a raw material is used to synthesize quartz glass at a low temperature by the sol-gel method. A dry gel is charged into a sintering furnace in sintering the dry gel, and a halide, e.g. CCl4, or ammonia compound, e.g. (NH4)2SO4, is charged thereinto at the same time. Thus, the aimed transparent and homogeneous quartz glass usable in optical applications or applications requiring heat resistance is produced easily at a low cost.