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    Field-emission electron source
    31.
    发明授权
    Field-emission electron source 失效
    场发射电子源

    公开(公告)号：US5925891A

    公开(公告)日：1999-07-20

    申请号：US833191

    申请日：1997-04-14

    Applicant: Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

    Inventor： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

    IPC: H01J9/02 ,  H01L29/06 ,  H01J1/16 ,  H01J19/10

    CPC classification number: H01J9/025 ,  H01J2201/30426

    Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

    Abstract translation: 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

    Multilayer emitter element and display comprising same
    32.
    发明授权
    Multilayer emitter element and display comprising same 失效
    多层发射体元件和包括其的显示器

    公开(公告)号：US5869169A

    公开(公告)日：1999-02-09

    申请号：US722490

    申请日：1996-09-27

    Applicant: Gary W. Jones

    Inventor： Gary W. Jones

    IPC: H01J1/304 ,  B32B7/02 ,  H01J1/02

    CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  Y10T428/2495

    Abstract: A field emitter element comprising a bottom layer of material shaping the overall emitter element, and a top layer of low work function material or otherwise of high electron emissivity characteristic. The low work function top layer preferably is shaped to a sharp point. The bottom layer may be formed of a material such as tantalum, molybdenum, gold, or silicon (or alloys thereof), and the top layer may be formed of a material such as Cr.sub.3 Si, Cr.sub.3 Si.sub.2, CrSI.sub.2, Nb.sub.3 Si.sub.2, Nb, Cr.sub.2 O.sub.3 or SiC. In a specific aspect, at least one of the first and second emitter materials is chromium oxide (Cr.sub.2 O.sub.3). In another variant, the first emitter material is an insulator of leaky dielectric, e.g., SiO with a 10-60% Cr by weight based on the weight of SiO, and the second emitter material is SiO+50-90% Cr by weight, based on the weight of SiO.

    Abstract translation: 场致发射体元件包括形成整个发射体元件的底层材料，以及低功函数材料的顶层或具有高电子发射率特性的顶层。 低功函数顶层优选成形为尖锐点。 底层可以由诸如钽，钼，金或硅（或其合金）的材料形成，并且顶层可以由诸如Cr 3 Si，Cr 3 Si 2，CrSi 2，Nb 3 Si 2，Nb，Cr 2 O 3或SiC的材料形成 。 在具体方面，第一和第二发射体材料中的至少一个是氧化铬（Cr 2 O 3）。 在另一个变型中，第一发射极材料是漏电介质的绝缘体，例如，以SiO的重量为基准的重量为10-60％的Cr的SiO，第二发射极材料为SiO + 50-90％Cr， 基于SiO的重量。

    Method of making a field emitter
    33.
    发明授权
    Method of making a field emitter 失效
    制作场发射器的方法

    公开(公告)号：US5679043A

    公开(公告)日：1997-10-21

    申请号：US457962

    申请日：1995-06-01

    Applicant: Nalin Kumar

    Inventor： Nalin Kumar

    IPC: H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

    CPC classification number: H01J9/027 ,  H01J1/304 ,  H01J1/316 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

    Abstract: A matrix addressable flat panel display includes a flat cathode operable for emitting electrons to an anode when an electric field is produced across the surface of the flat cathode by two electrodes placed on each side of the flat cathode. The flat cathode may consist of a cermet or amorphic diamond or some other combination of a conducting material and an insulating material such as a low effective work function material. The electric field produced causes electrons to hop on the surface of the cathode at the conducting-insulating interfaces. An electric field produced between the anode and the cathode causes these electrons to bombard a phosphor layer on the anode.

    Abstract translation: 矩阵寻址平板显示器包括平面阴极，当通过放置在平面阴极的每一侧上的两个电极跨越平面阴极的表面产生电场时，可以将电子发射到阳极。 扁平阴极可以由金属陶瓷或非晶金刚石或导电材料和绝缘材料的一些其它组合构成，例如低有效功函数材料。 所产生的电场导致电子在导电绝缘界面处在阴极的表面上跳跃。 在阳极和阴极之间产生的电场使得这些电子轰击阳极上的磷光体层。

    Field emission type cathode structure for cathode-ray tube
    37.
    发明授权
    Field emission type cathode structure for cathode-ray tube 失效
    阴极射线管的场发射型阴极结构

    公开(公告)号：US5543680A

    公开(公告)日：1996-08-06

    申请号：US325170

    申请日：1994-10-20

    Applicant: Yoshinori Tomihari

    Inventor： Yoshinori Tomihari

    IPC: H01J29/04 ,  H01J29/48 ,  H01J19/24

    CPC classification number: H01J29/485 ,  H01J29/04 ,  H01J2201/30426

    Abstract: In a field emission type cathode structure for a CRT, a grid electrode has an opening at a position corresponding to a position of a bonding wire for connecting a gate electrode to a lead connected to a power supply for a gate voltage. A bonding tool moves vertically through the opening of the grid electrode to bond the bonding wire on the gate electrode and the lead.

    Abstract translation: 在CRT的场致发射型阴极结构中，栅电极在对应于用于将栅电极连接到与栅极电压的电源连接的引线的接合线的位置处的位置处具有开口。 焊接工具通过栅电极的开口垂直移动，以将接合线接合在栅电极和引线上。

    Field emission element
    39.
    发明授权
    Field emission element 失效
    场发射元件

    公开(公告)号：US5469014A

    公开(公告)日：1995-11-21

    申请号：US829251

    申请日：1992-02-03

    Applicant: Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

    Inventor： Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

    IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01J1/30

    CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

    Abstract: A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.

    Abstract translation: 一种场致发射元件，包括栅极和发射极，并且能够防止在发射极的顶端上形成任何元素氧化物层，以防止发射电流降低，操作不稳定和噪声增加。 栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面，从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子，以防止 在发射体上形成任何氧化物层。 当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时，在发射极的顶端表面上形成任何氧化物层都被最小化。

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