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公开(公告)号：US08232711B2
公开(公告)日：2012-07-31
申请号：US12597035
申请日：2008-04-23
Applicant: Akira Kojima , Hideyuki Ohyi
Inventor： Akira Kojima , Hideyuki Ohyi
IPC: H01J1/02
CPC classification number: H01J37/073 , B82Y10/00 , B82Y40/00 , H01J1/312 , H01J37/06 , H01J37/3174 , H01J2201/312 , H01J2237/0635
Abstract: A surface emission type electron source including a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, an insulator or semiconductor layer between the second electrode and the electron passage layer, and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are made of silicon and spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. Protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.
Abstract translation: 一种表面发射型电子源，包括具有平面形状的第一电极，具有面向第一电极的平面形状的第二电极，设置在第一电极和第二电极之间的电子通过层，位于第二电极之间的绝缘体或半导体层 和电子通过层，以及构成为向第二电极和第一电极施加电压的电源部。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线由硅制成并且以预定间隔彼此间隔开，电子从第二电极的前表面发射。 在与量子线对应的位置处，在第二电极的背面上形成向量子线的前端突出的突起。
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32.发明授权Electron emitting device, display apparatus using electron emitting device, and method of manufacturing electron emitting device 有权电子发射器件，使用电子发射器件的显示装置和制造电子发射器件的方法公开(公告)号：US07994698B2
公开(公告)日：2011-08-09
申请号：US12225798
申请日：2007-03-26
Applicant: Ryota Tanaka , Nobuyasu Negishi , Kazuto Sakemura , Yoshiyuki Okuda , Tomonari Nakada , Atsushi Watanabe , Takamasa Yoshikawa , Kiyohide Ogasawara
Inventor： Ryota Tanaka , Nobuyasu Negishi , Kazuto Sakemura , Yoshiyuki Okuda , Tomonari Nakada , Atsushi Watanabe , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC: H01J63/04
CPC classification number: H01J9/022 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H01J2329/0481 , H01J2329/0484
Abstract: An electron emitting device includes an amorphous electron supply layer, an insulating layer formed on the electron supply layer, and an electrode formed on the insulating layer. The electron emits device emitting electrons when an electric field is applied between the electron supply layer and the electrode. The electron emitting device includes a concave portion provided by notching the electrode and the insulating layer to expose the electron supply layer, and a carbon layer covering the electrode and the concave portion except for an inner portion of an exposed surface 4a of the electron supply layer and being in contact with an edge portion of the exposed surface of the electron supply layer.
Abstract translation: 电子发射器件包括非晶电子供给层，形成在电子供给层上的绝缘层和形成在绝缘层上的电极。 当在电子供应层和电极之间施加电场时，电子发射发射电子的装置。 电子发射器件包括凹陷部分，其通过切割电极和绝缘层以暴露电子供应层，以及覆盖电极和除了电子供给层的暴露表面4a的内部以外的凹部的碳层 并且与电子供给层的暴露表面的边缘部分接触。
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33.发明申请ELECTRON EMITTING ELEMENT, ELECTRON EMITTING DEVICE, LIGHT EMITTING DEVICE, IMAGE DISPLAY DEVICE, COOLING DEVICE, AND CHARGING DEVICE 有权电子发射元件，电子发射装置，发光装置，图像显示装置，冷却装置和充电装置公开(公告)号：US20100196050A1
公开(公告)日：2010-08-05
申请号：US12699349
申请日：2010-02-03
Applicant: Tadashi Iwamatsu , Ayae Nagaoka , Hiroyuki Hirakawa , Yasuo Imura
Inventor： Tadashi Iwamatsu , Ayae Nagaoka , Hiroyuki Hirakawa , Yasuo Imura
CPC classification number: G03G15/02 , B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H05B33/08
Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.
Abstract translation: 本发明的电子发射元件包括设置在电极基板和薄膜电极之间的电子加速层，该电子加速层包括（a）导电细颗粒和（b）绝缘平均粒径大于 导电细颗粒的。 电子发射元件满足以下关系式：0.3x + 3.9＆nlE; y＆nlE; 75，其中x（nm）是绝缘细颗粒的平均粒径，y（nm）是薄膜电极的厚度 这样的结构允许相对于绝缘颗粒的尺寸修改薄膜电极的厚度，从而确保导电并允许足够的电流在元件内部流动。 结果，可以从薄膜电极稳定地发射弹道电子。
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公开(公告)号：US20100072875A1
公开(公告)日：2010-03-25
申请号：US12597035
申请日：2008-04-23
Applicant: Akira Kojima , Hideyuki Ohyi
Inventor： Akira Kojima , Hideyuki Ohyi
IPC: H01J1/02
CPC classification number: H01J37/073 , B82Y10/00 , B82Y40/00 , H01J1/312 , H01J37/06 , H01J37/3174 , H01J2201/312 , H01J2237/0635
Abstract: A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.
Abstract translation: 根据本发明的表面发射型电子源包括具有平面形式的第一电极; 具有面向第一电极的平面形状的第二电极; 设置在所述第一电极和所述第二电极之间的电子通过层; 以及电源部，被配置为向所述第二电极和所述第一电极施加电压。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线以预定间隔彼此隔开，电子从第二电极的前表面发射。 量子线由硅制成，并且每个量子线具有沿着第一方向以预定间隔形成的具有小厚度的多个薄部。
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公开(公告)号：JP5374432B2
公开(公告)日：2013-12-25
申请号：JP2010083862
申请日：2010-03-31
Applicant: パナソニック株式会社
CPC classification number: H01J9/025 , B82Y10/00 , H01J1/312 , H01J2201/312
Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.
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Patent Agency Ranking
公开(公告)号：JPWO2007114103A1
公开(公告)日：2009-08-13
申请号：JP2008508533
申请日：2007-03-26
Applicant: パイオニア株式会社
Inventor： 亮太 田中 , 亮太 田中 , 伸安 根岸 , 伸安 根岸 , 一到 酒村 , 一到 酒村 , 奥田 義行 , 義行 奥田 , 智成 中田 , 智成 中田 , 渡辺 温 , 温 渡辺 , 吉川 高正 , 高正 吉川 , 清秀 小笠原 , 清秀 小笠原
CPC classification number: H01J9/022 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H01J2329/0481 , H01J2329/0484
Abstract: 電子放出素子の電子放出の効率を向上させるとともに素子の損傷を防止する。非結晶質の電子供給層(4)と、電子供給層(4)上に形成された絶縁体層(5)と、絶縁体層(5)上に形成された上部電極(6)とを有し、電子供給層(4)と上部電極(6)間に電界が印加されたときに電子を放出する電子放出素子であって、上部電極(6)と絶縁体層(5)が切り欠かれ電子供給層(4)が露出した凹部(7)と、上部電極(6)と凹部(7)上を電子供給層(4)の露出面(4a)の内側部分(4b)を除いて覆い電子供給層(4)の露出面(4a)の縁部分(4c)に接触する炭素層(8)とを有する。
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公开(公告)号：JP4959680B2
公开(公告)日：2012-06-27
申请号：JP2008508533
申请日：2007-03-26
Applicant: パイオニア株式会社
CPC classification number: H01J9/022 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H01J2329/0481 , H01J2329/0484
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公开(公告)号：JP2007250517A
公开(公告)日：2007-09-27
申请号：JP2006201494
申请日：2006-07-25
Applicant: Ngk Insulators Ltd , 日本碍子株式会社
Inventor： SATO KEI , HATTORI TETSUYA , YAMAGUCHI HIROFUMI , OZAWA SHUICHI
IPC: H01J1/312
CPC classification number: H01J1/312 , B82Y10/00 , H01J1/30 , H01J2201/306 , H01J2201/312
Abstract: PROBLEM TO BE SOLVED: To provide a piezoelectric-film-type electron emitter of high durability improved in degradation of electron emission quantity caused by repeated use. SOLUTION: This electron emitter 120 includes a substrate 121, a lower electrode 122, an emitter layer 123, and an upper electrode 124. The upper electrode 124 has a plurality of openings 124a formed therein, and an emitter section 125 located on the top surface of the emitter layer 123 is exposed through the openings 124a to a reduced-pressure atmosphere. The electron emitter 120 is configured so that, when a pulse-like drive voltage Va is applied between the lower electrode 122 and the upper electrode 124, electrons are accumulated on the emitter section 125, and thereafter the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer 123 contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of a high oxidation number which serves as an oxidizing agent and is thereby converted into an oxide of a lower oxidation number. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供一种高耐久性的压电薄膜型电子发射器，其改善了由重复使用引起的电子发射量的劣化。 解决方案：该电子发射器120包括衬底121，下电极122，发射极层123和上电极124.上电极124具有形成在其中的多个开口124a和位于 发射极层123的顶表面通过开口124a暴露于减压气氛。 电子发射体120被配置为使得当在下电极122和上电极124之间施加脉冲状驱动电压Va时，电子被累积在发射极部分125上，此后电子朝向减压 大气层。 发射极层123含有主要成分（即，铁电体组合物）和附加成分。 附加成分含有高氧化数的过渡金属氧化物，其作为氧化剂，由此转化为较低氧化数的氧化物。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP5171988B2
公开(公告)日：2013-03-27
申请号：JP2011106086
申请日：2011-05-11
Applicant: パイオニア株式会社
CPC classification number: H01J9/022 , B82Y10/00 , H01J1/312 , H01J29/04 , H01J31/127 , H01J2201/312 , H01J2201/3125 , H01J2329/0481 , H01J2329/0484
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公开(公告)号：JP2008294389A
公开(公告)日：2008-12-04
申请号：JP2007207887
申请日：2007-08-09
Applicant: Kuresutetsuku:Kk , 株式会社クレステック
Inventor： KOJIMA AKIRA , OI HIDEYUKI
IPC: H01L21/027 , H01J1/312 , H01J37/305
CPC classification number: H01J37/073 , B82Y10/00 , B82Y40/00 , H01J1/312 , H01J37/06 , H01J37/3174 , H01J2201/312 , H01J2237/0635
Abstract: PROBLEM TO BE SOLVED: To provide a surface emission type electron source and a drawing device that can perform pattern drawing using the electron beam in equimultiples collectively even when a drawing region is large. SOLUTION: A surface emission type electron source includes a planar first electrode, a planar second electrode provided in opposition to the first electrode, an electron passage layer provided between the first electrode and the second electrode, and a power supply section for applying voltage to the second electrode and the first electrode. In the electron passage layer, multiple quantum fine lines extending in a first direction heading for the second electrode from the first electrode are provided with a predetermined interval therebetween. Electrons are emitted from the surface of the second electrode. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：为了提供一种即使当绘图区域大时也可以共同地使用等分的电子束进行图形绘制的表面发射型电子源和绘图装置。 解决方案：表面发射型电子源包括平面第一电极，与第一电极相对设置的平面第二电极，设置在第一电极和第二电极之间的电子通过层，以及用于施加 电压到第二电极和第一电极。 在电子通过层中，从第一电极朝向第二电极的第一方向延伸的多个量子细线以它们之间的预定间隔设置。 电子从第二电极的表面发射。 版权所有（C）2009，JPO＆INPIT
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