公开(公告)号：JP2005251748A

公开(公告)日：2005-09-15

申请号：JP2005056324

申请日：2005-03-01

Applicant: Samsung Sdi Co Ltd ,  三星エスディアイ株式会社

Inventor： NAN CHUYU ,  IN TAIITSU ,  PARK JONG-HWAN ,  LEE CHEON KYU ,  SAI TOKUGEN ,  YOO JI-BEOM ,  CHOI JONG-HYUNG

IPC: H01J31/12 ,  H01J1/05 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J29/04

CPC classification number: B82Y10/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a cathode substrate, capable of forming an electron emission source in a simple method, increasing adhesive force between the electron emission source and the substrate, and carrying out electron emission without any special surface treatment, and also to provide a flat panel display device including the cathode substrate manufactured by the method. SOLUTION: The manufacturing method of the cathode substrate includes a process of forming a cathode electrode 3 on the substrate 1, a process of forming a conductive layer 5 by coating a conductive composition containing an Si-containing matter on the cathode electrode 3, and a process of forming the electron emission source 7 by coating an electron emission source composition containing carbon nanotube on the conductive layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供能够以简单的方法形成电子发射源的阴极基板的制造方法，增加电子发射源和基板之间的粘合力，并且不会发生任何特殊的电子发射 表面处理，并且还提供包括通过该方法制造的阴极基板的平板显示装置。 解决方案：阴极基板的制造方法包括在基板1上形成阴极电极3的工艺，通过在阴极电极3上涂覆含有含Si物质的导电组合物来形成导电层5的工艺 以及通过在导电层上涂覆含有碳纳米管的电子发射源组合物来形成电子发射源7的工艺。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005044606A

公开(公告)日：2005-02-17

申请号：JP2003202518

申请日：2003-07-28

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAKAI TADASHI ,  ONO TOMIO ,  SAKUMA HISASHI ,  SUZUKI MARIKO ,  YOSHIDA HIROAKI

IPC: C30B29/04 ,  H01J1/05 ,  H01J1/15 ,  H01J9/04 ,  H01J31/15 ,  H01J61/06 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J9/042 ,  H01J1/15 ,  H01J61/0677 ,  H01J61/0737

Abstract: PROBLEM TO BE SOLVED: To provide a thermionic cathode in which sufficient conductivity is obtained from the starting time at room temperature, and which is capable of efficient heating and thermionic emission and has a long life.
SOLUTION: This cathode is provided with an encapsulated tube 9 in which discharge gas 11 is encapsulated, a fluorescent film 10 applied on the inner wall of the encapsulated tube 9, and a pair of discharge electrodes arranged at both ends of the encapsulated tube 9. The discharge electrodes are provided with insulating substrates 7a, and wide forbidden band semiconductor layers 1a on the insulating substrates 7a. Contact films 23a, 24a are formed on the surface of the wide forbidden band semiconductor layers 1a. Stem reeds 21a, 22a are connected to the wide forbidden band semiconductor layers 1a via the contact films 23a, 24a. The stem reeds 21a, 22a are respectively contacted to backsides of the insulating substrates 7a opposed to the contact films 23a, 24a, and pinch like a spring and retain from both sides a laminated structure composed of the insulating substrates 7a and the wide forbidden band semiconductor layers 1a.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供从室温起始时间获得足够的导电性并且能够有效地加热和热离子发射并具有长寿命的热离子阴极。 解决方案：该阴极设置有封装管9，其中封装有放电气体11，施加在封装管9的内壁上的荧光膜10和布置在封装的管的两端的一对放电电极 放电电极在绝缘基板7a上设置有绝缘基板7a和宽禁带半导体层1a。 接触膜23a，24a形成在宽禁带半导体层1a的表面上。 杆簧21a，22a经由接触膜23a，24a连接到宽禁带半导体层1a。 杆簧21a，22a分别接触与接触膜23a，24a相对的绝缘基板7a的背面，并且像弹簧一样夹紧，并且从两侧保持由绝缘基板7a和宽禁带半导体构成的层叠结构 层1a。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2688261B2

公开(公告)日：1997-12-08

申请号：JP27595089

申请日：1989-10-25

IPC: H01J27/26 ,  H01J1/04 ,  H01J1/05 ,  H01J37/08

公开(公告)号：DE102014226814A1

公开(公告)日：2016-06-23

申请号：DE102014226814

申请日：2014-12-22

Applicant: SIEMENS AG

Inventor： HEID OLIVER

IPC: H01J35/08 ,  H01J1/05

Abstract: Es wird eine Metallstrahlröntgenröhre vorgeschlagen, die weniger als konventionelle Röhren vom Problem der Leistungsdichte im Auftreffpunkt des Elektronenstrahls auf der Anodenkomponente betroffen sind. Die Metallstrahlröntgenröhre stellt hierzu als Anodenkomponente (7) einen soweit dünnen Metallstrahl (6) zur Verfügung, dass durch diesen Metallstrahl (6) ein darauf auftreffender Elektronenstrahl (4) nur teilweise abgebremst wird. Desweiteren ist der Metallstrahl (6) der Anodenkomponente (7) wenigstens in einem einzigen zweiten, relativ gut elektronendurchlässigen und wärmeabsorbierenden Material (13) eingebettet oder darin aufgelöst.

公开(公告)号：DE102009057546A1

公开(公告)日：2010-09-16

申请号：DE102009057546

申请日：2009-12-09

Applicant: USHIO ELECTRIC INC

Inventor： IKEUCHI MITSURU ,  ARIMOTO TOMOYOSHI

IPC: H01J61/06 ,  H01J1/05 ,  H01J7/06 ,  H01J61/16

Abstract: Die Erfindung betrifft eine Entladungslampe mit einem Entladungsgefäß (1), in dem eine Kathode (5) und eine Anode (4) in der Röhrenachsrichtung des Entladungsgefäßes (1) gegenüberliegend angeordnet sind, wobei die Kathode (5) aus einem Material gebildet ist, bei dem ein Grundstoff aus metallischem Wolfram ein Lanthanoxid und ein Zirkoniumoxid enthält. Im Kathoden-Grundstoff aus metallischem Wolfram ist zudem Kohlenstoff in Form einer festen Lösung vorhanden.

公开(公告)号：DE69827140T2

公开(公告)日：2006-03-09

申请号：DE69827140

申请日：1998-07-29

Applicant: NANO PROPRIETARY INC

Inventor： TOLT ZHIDAN LI

IPC: C01B31/02 ,  B01J19/00 ,  C23C16/26 ,  H01J1/02 ,  H01J1/05 ,  H01J1/30 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12 ,  H01L29/78

Abstract: A carbon film used for a field emission cathode comprises a layer of thin carbon film on a substrate. With 244 nm and 2-7 mW excitation, and within the wave number from 1100 to 1850 cm-1, the carbon film has a distinct UV Raman band in the range from 1578 cm-1 to 1620 cm-1 with a full width at half maximum from 25 to 165 cm-1. The carbon film can be deposited by chemical vapor deposition, physical vapor deposition, electrolysis, printing or painting, and can be continuous or noncontinuous.

公开(公告)号：AU2724802A

公开(公告)日：2002-06-18

申请号：AU2724802

申请日：2001-12-06

Applicant: SI DIAMOND TECHN INC

Inventor： YANIV ZVI ,  FINK RICHARD LEE ,  PAVLOVSKY IGOR

IPC: H01J1/304 ,  H01J1/05 ,  H01J1/02 ,  H01J1/30

Abstract: The present invention is directed toward methods for incorporating low work function metals and salts of such metals into carbon nanotubes for use as field emitting materials. The present invention is also directed toward field emission devices, and associated components, comprising treated carbon nanotubes that have, incorporated into them, low work function metals and/or metal salts, and methods for making same. The treatments of the carbon nanotubes with the low work function metals and/or metal salts serve to improve their field emission properties relative to untreated carbon nanotubes when employed as a cathode material in field emission devices.

公开(公告)号：DE3855244T2

公开(公告)日：1997-01-02

申请号：DE3855244

申请日：1988-02-16

Applicant: NEC CORP

Inventor： ICHIYOSHI OSAMU

IPC: H03H17/02 ,  H04J1/05 ,  H01J1/05 ,  H04J4/00

Abstract: An N-channel FDM signal is converted into complex signals of baseband frequencies (1-6) spaced at intervals equal to frequency DELTA f. The complex baseband signals are converted first into digital samples (7-9)having a frequency N DELTA f and then into N parallel digital signals (11). A plurality of first FIR subfilters (17-1 through 17-N) respectively perform filtering on each of the parallel digital signals at frequency DELTA f to produce a first series of filtered digital signals from each of the first FIR subfilters, and (m - 1) groups of second FIR subfilters respectively perform filtering on each of the parallel digital signals at frequency DELTA f to produce a second series of filtered digital samples from each of the second FIR subfilters at timing displaced with respect to the first series by a/m DELTA f, where is an integer ranging from unity to (m - 1) and m is an integer equal to or greater than 2. Outputs of the first FIR subfilters are combined with outputs of the second FIR subfilters to produce N summation outputs at frequency m DELTA f. An N-point Fast Fourier Transform processor (14) performs fast Fourier transform on the N summation outputs at frequency m DELTA f to derive digital channels. Because of the oversampling at frequency m DELTA f, each of the digital channels has a frequency response which can be made flat over the bandwidth DELTA f.

公开(公告)号：PL132005B2

公开(公告)日：1985-01-31

申请号：PL23393581

申请日：1981-11-20

IPC: E02D31/02 ,  E04B20060101 ,  E04B1/70 ,  H01J1/05 ,  H05B20060101

公开(公告)号：AT293554B

公开(公告)日：1971-10-11

申请号：AT971969

申请日：1969-10-15

Applicant: EGYESUELT IZZOLAMPA

Inventor： CZEILER ANDRAS ,  ZOELDI MIKLOS

IPC: H01J19/00 ,  H01J1/05