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    Sacrificial layer made from aerogel for microelectromechanical system (mems) device manufacturing process
    393.
    发明专利
    Sacrificial layer made from aerogel for microelectromechanical system (mems) device manufacturing process 审中-公开
    微电子机电系统（MEMS）器件制造工艺的空气玻璃制造系列

    公开(公告)号：JP2012101351A

    公开(公告)日：2012-05-31

    申请号：JP2011242341

    申请日：2011-11-04

    Applicant: Honeywell Internatl Inc ,  ハネウェル・インターナショナル・インコーポレーテッド

    Inventor： DETRY JAMES F

    IPC: B81C1/00

    CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0109

    Abstract: PROBLEM TO BE SOLVED: To provide systems and methods for processing sacrificial layers in fabricating a microelectromechanical systems (MEMS) device.SOLUTION: In one embodiment, a method includes steps for: applying a patterned layer of an aerogel material to a substrate to form an aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the aerogel sacrificial layer where the non-sacrificial silicon layer is coupled to the substrate through one or more gaps formed in the patterned layer of the aerogel material; and removing the aerogel sacrificial layer by exposing the aerogel sacrificial layer to a removal liquid.

    Abstract translation: 要解决的问题：提供用于在制造微机电系统（MEMS）装置中处理牺牲层的系统和方法。 解决方案：在一个实施例中，一种方法包括以下步骤：将气凝胶材料的图案化层施加到基底以形成气凝胶牺牲层; 在所述气凝胶牺牲层上施加至少一个非牺牲硅层，其中所述非牺牲硅层通过在所述气凝胶材料的所述图案化层中形成的一个或多个间隙与所述衬底耦合; 以及通过将气凝胶牺牲层暴露于去除液体来除去气凝胶牺牲层。 版权所有（C）2012，JPO＆INPIT

    Multi-metal layer mems structure and the process of making this
    394.
    发明专利
    Multi-metal layer mems structure and the process of making this 有权

    公开(公告)号：JP4880878B2

    公开(公告)日：2012-02-22

    申请号：JP2004011617

    申请日：2004-01-20

    Applicant: アクスティカ,インコーポレイテッド

    Inventor： ジェイ．ガブリエル カイガム ,  チュー シュー

    IPC: B81B3/00 ,  B81C1/00 ,  C23F1/00 ,  H01G4/00 ,  H01G5/00 ,  H01G7/00 ,  H01G9/00 ,  H01G13/00 ,  H01H59/00 ,  H01L23/48 ,  H01L23/52 ,  H04R19/00 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

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