公开(公告)号：US20080171404A1

公开(公告)日：2008-07-17

申请号：US11572105

申请日：2005-07-11

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: H01L21/02 ,  B32B43/00

CPC classification number: H01L24/26 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/83224 ,  H01L2224/83801 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/19043

Abstract: A method and a device for the mutual contacting of two wafer-type component composite configurations made of multiple identical components which are implemented coherently, in particular a semiconductor wafer (12) with a functional component wafer (14), to produce electronic assemblies on the wafer level, in which the component composite configurations are each situated on a receptacle unit (11; 13) and the contact pressure necessary for the contacting between contact metallizations of the component composite configurations to be connected to one another is generated in such a way that a vacuum is generated in a contact chamber which receives the component composite configurations and is delimited by the receptacle units, and the contacting of the contact metallizations is performed by a rear energy impingement of a component composite configuration.

Abstract translation: 一种用于相互接触的两个晶片型部件复合结构相互接触的方法和装置，所述两个晶片型部件复合结构由相干地实现的多个相同部件，特别是具有功能部件晶片（14）的半导体晶片（12）制成，以在其上产生电子组件 晶片级，其中部件复合结构各自位于插座单元（11; 13）上，并且以相互连接的部件复合结构的接触金属化之间的接触所需的接触压力被产生，使得 在接收室中产生真空，该接触室接收组件复合结构，并由容器单元限定，并且接触金属化的接触通过组件复合构造的后能量冲击来执行。

公开(公告)号：US07049213B2

公开(公告)日：2006-05-23

申请号：US10333767

申请日：2002-05-22

Applicant: Elke Zakel ,  Ghassem Azdasht

Inventor： Elke Zakel ,  Ghassem Azdasht

IPC: H01L21/44

CPC classification number: H05K3/3478 ,  H01L2224/11334 ,  H05K3/4038 ,  H05K3/4046 ,  H05K2201/0305 ,  H05K2201/0382 ,  H05K2203/0195 ,  H05K2203/0278 ,  H05K2203/041

Abstract: The invention relates to a method for producing a contact substrate (10) as well as to a contact substrate with through-plating between a connector arrangement (21) arranged at the top of a dielectric carrier substrate (12) and the underside of the carrier substrate, wherein the connector arrangement extends along an aperture margin (22) of a substrate recess (15), and the underside (11) of the carrier substrate (12) is supported by a backstop (23), wherein a formed solder material part (24) is placed in the substrate recess (15), and in a subsequent method-related step said formed solder material part (24) is deformed within the substrate recess so as to form a formed contact part (50), such that radial displacement of the material of the formed solder material part in the substrate recess results in a non-positive connection between an intrados surface (28) of the substrate recess and the connector arrangement (21), and that the formed contact part provides through-plating between the connector arrangement (21) and the underside (11) of the carrier substrate.

Abstract translation: 本发明涉及一种用于制造接触衬底（10）的方法以及在布置在电介质载体衬底（12）的顶部处的连接器装置（21）和载体的下侧之间的具有穿镀的接触衬底 基板，其中所述连接器装置沿着基板凹部（15）的孔边缘（22）延伸，并且所述载体基板（12）的下侧（11）由止回件（23）支撑，其中形成的焊料材料部分 （24）被放置在基板凹部（15）中，并且在随后的方法相关步骤中，所形成的焊料材料部分（24）在基板凹部内变形，以形成形成的接触部分（50），使得径向 衬底凹陷中形成的焊料材料部分的材料的位移导致衬底凹槽的凹入表面（28）和连接器装置（21）之间的非正连接，并且形成的接触部分提供 在连接器装置（21）和载体基板的下侧（11）之间的电镀。

公开(公告)号：US06983539B2

公开(公告)日：2006-01-10

申请号：US10161472

申请日：2002-06-03

Applicant: Mohammad Akhavain ,  Ghassem Azdasht

Inventor： Mohammad Akhavain ,  Ghassem Azdasht

IPC: B21D53/76 ,  B23K26/00

CPC classification number: H01L24/80 ,  B23K26/22 ,  B23K2101/42 ,  B23K2103/08 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/56 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1643 ,  B41J2/1646 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01R43/02 ,  H01R43/0221 ,  H05K3/328 ,  H05K2201/0108 ,  H05K2201/0112 ,  H05K2201/10681 ,  H05K2203/107 ,  Y10T29/49083 ,  Y10T29/49128 ,  Y10T29/49144 ,  Y10T29/49149 ,  Y10T29/49179 ,  Y10T29/49401 ,  H01L2924/00

Abstract: In one form of the invention, a laser beam propagates directly through bulk material of a TAB tape or base, to heat and form a bond between electrical leads formed on the base and aligned contact bumps. In another form, a chromium seed-metal layer is formed on a TAB tape or base, and leads are in turn formed on the chromium; the chromium absorbs a laser beam to heat the leads. In both forms, an optical fiber preferably presses copper leads and gold bumps together with over 300 g force, without aid by a gas stream—and then also conducts the beam to the bond site, forming a bond of shear strength over 200 g. Also preferably gold contacts are plated on the leads; and the method makes an inkjet printhead—with the bumps formed on a die or other printhead component, and nozzles formed through the base.

Abstract translation: 在本发明的一种形式中，激光束直接通过TAB带或基底的材料传播，以加热并形成在基底上形成的电引线和对准的接触凸块之间的结合。 在另一种形式中，在TAB带或基底上形成铬种子金属层，并在铬上形成引线; 铬吸收激光束以加热引线。 在两种形式中，光纤优选地将铜引线和金凸起与超过300g的力一起压制，而不用气流的帮助，然后还将梁传导到结合位置，形成剪切强度超过200g的粘结。 金触点也优选镀在引线上; 并且该方法制造喷墨打印头，其中凸起形成在模具或其它打印头部件上，以及通过基部形成的喷嘴。

公开(公告)号：US06713714B1

公开(公告)日：2004-03-30

申请号：US09889677

申请日：2001-07-17

Applicant: Ghassem Azdasht

Inventor： Ghassem Azdasht

IPC: B23K2620

CPC classification number: B23K1/0056 ,  B23K26/22 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/75 ,  H01L2224/75743 ,  H01L2224/78301 ,  H01L2224/81224 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19043 ,  H05K13/0409

Abstract: A method and a device for thermally connecting the terminal areas (26, 27) of a contact substrate (11) to the terminal areas (28, 29) of a carrier substrate (12), where the substrates (11, 12) are, in order to produce the connection, arranged in a connecting position such that the terminal areas (26, 28; 27, 29) are situated opposite one another in the plane of the connection, where the contact substrate (11) is heated to the connecting temperature from its rear side that is situated opposite the terminal areas (26, 27) in order to reach the required connecting temperature in the plane of the connection, and where the contact substrate (11) is heated by subjecting the substrate to laser energy.

Abstract translation: 一种用于将接触基板（11）的端子区域（26,27）热连接到载体基板（12）的端子区域（28,29）的方法和装置，其中基板（11,12） 为了产生连接，布置在连接位置，使得端子区域（26,28; 27,29）在连接的平面中彼此相对定位，其中接触基板（11）被加热到连接 其位于与端子区域（26,27）相对的后侧的温度，以便达到连接平面中所需的连接温度，并且通过对衬底进行激光能量来加热接触衬底（11）。

公开(公告)号：US06284639B1

公开(公告)日：2001-09-04

申请号：US09367462

申请日：1999-10-25

Applicant: Rolf Aschenbrenner ,  Ghassem Azdasht ,  Elke Zakel ,  Andreas Ostmann ,  Gerald Motulla

Inventor： Rolf Aschenbrenner ,  Ghassem Azdasht ,  Elke Zakel ,  Andreas Ostmann ,  Gerald Motulla

IPC: H01L2144

CPC classification number: H01L24/13 ,  H01L23/522 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014

Abstract: The present invention relates to a method of forming a structured metallization on a semiconductor wafer, wherein a main surface of the wafer has a passivation layer applied thereto, which is structured so as to determine at least one bond pad. Initially, a metal bump is produced on the at least one bond pad. An activated dielectric is then produced on the areas of the passivation layer on which the structured metallization is to be formed. Finally, metal is chemically deposited directly on the activated dielectric and on the metal bump in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the metal bump are electro-conductively joined.

Abstract translation: 本发明涉及一种在半导体晶片上形成结构化金属化的方法，其中晶片的主表面具有施加到其上的钝化层，其被构造成确定至少一个焊盘。 最初，在至少一个接合焊盘上产生金属凸块。 然后在其上将形成结构化金属化的钝化层的区域上产生活化的电介质。 最后，将金属直接化学沉积在活化的电介质和金属凸块上，使得形成在活化的电介质上的结构化金属化物和化学沉积在金属凸块上的金属被电导接合。

公开(公告)号：US6093971A

公开(公告)日：2000-07-25

申请号：US850547

申请日：1997-05-02

Applicant: Hans-Hermann Oppermann ,  Elke Zakel ,  Ghassem Azdasht ,  Paul Kasulke

Inventor： Hans-Hermann Oppermann ,  Elke Zakel ,  Ghassem Azdasht ,  Paul Kasulke

IPC: H01L23/12 ,  H01L21/56 ,  H01L23/498 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L24/83 ,  H01L21/563 ,  H01L23/49827 ,  H01L23/4985 ,  H01L24/29 ,  H01L2224/1147 ,  H01L2224/11474 ,  H01L2224/11902 ,  H01L2224/13022 ,  H01L2224/13611 ,  H01L2224/16237 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/73203 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15173 ,  H01L2924/1579

Abstract: Chip module (20) with a chip carrier (21) and at least one chip (22), wherein the chip carrier is designed as a sheet with a carrier layer (23) of plastics material and a conductor path structure (24) with conductor paths (28), and the chip carrier is connected to the chip with interposition of a filling material (37), wherein the conductor paths are connected on their front to attachment faces (32) of the chip and, on their rear side (27), have external bonding regions (26) for forming a flatly distributed attachment face arrangement (34) for the connection of the chip module to an electronic component or a substrate (31), and the conductor paths (28) extend in a plane on the chip bonding side (35) of the carrier layer (23) facing the chip (22), the external bonding regions (26) are formed by recesses in the carrier layer (23) which extend toward the rear side (27) of the conductor paths (28) and the carrier layer (23) extends over the region of the attachment faces (30) of the chip.

Abstract translation: 具有芯片载体（21）和至少一个芯片（22）的芯片模块（20），其中所述芯片载体被设计为具有塑料材料的载体层（23）的片材和具有导体的导体路径结构（24） 路径（28），并且芯片载体通过插入填充材料（37）连接到芯片，其中导体路径在其前部连接到芯片的附接面（32），并且在它们的后侧（27 ）具有用于形成用于将芯片模块连接到电子部件或基板（31）的平坦分布的附接面布置（34）的外部接合区域（26），并且导体路径（28）在 载体层（23）的与芯片（22）相对的芯片接合侧（35），外部接合区域（26）由载体层（23）中的凹部形成，该凹部沿着 导体路径（28）和载体层（23）在芯片的附接面（30）的区域上延伸。

公开(公告)号：US6072148A

公开(公告)日：2000-06-06

申请号：US987881

申请日：1997-12-08

Applicant: Ghassem Azdasht

Inventor： Ghassem Azdasht

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/067 ,  B23K26/08 ,  B23K26/20 ,  B23K26/42 ,  B23K101/40 ,  H01L21/60 ,  H01R43/02

CPC classification number: H01L24/80 ,  B23K26/067 ,  B23K26/702 ,  H01R43/0221 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14

Abstract: A device for producing by means of laser energy a plurality of connectionsetween contact elements of respective contact element pairs has a holding arrangement for holding a plurality of optical fibers having respective optical fiber ends. A positioner is provided for positioning the holding arangement and the contact element pairs at a predetermined position relative to one another, at which a respective optical fiber end is associated with a pair of contact elements, the connection surfaces of the contact elements of said pair of contact elements being pressed onto one another by a pressure applied by said optical fiber. Said connecting device additionally comprises a device for compensating different distances between the optical fiber ends and the surfaces of the associated contact element pairs facing said optical fiber ends, in such a way that the connection surfaces of the contact elements are pressed onto one another.

Abstract translation: 用于通过激光能量生产各个接触元件对的接触元件之间的多个连接的装置具有保持多个具有相应光纤端部的光纤的保持装置。 定位器被设置用于将保持装置和接触元件对定位在相对于彼此的预定位置处，在该位置处相应的光纤端与一对接触元件相关联，所述一对接触元件的连接表面 接触元件被所述光纤施加的压力压在彼此上。 所述连接装置还包括用于补偿光纤端部与面对所述光纤端部的相关联的接触元件对的表面之间的不同距离的装置，使得接触元件的连接表面被压在彼此上。

公开(公告)号：US6043985A

公开(公告)日：2000-03-28

申请号：US965877

申请日：1997-11-07

Applicant: Ghassem Azdasht ,  Paul Kasulke ,  Habib Badrihafifekr ,  Stefan Weiss ,  Elke Zakel

Inventor： Ghassem Azdasht ,  Paul Kasulke ,  Habib Badrihafifekr ,  Stefan Weiss ,  Elke Zakel

IPC: H01L21/60 ,  H01L23/367 ,  H01L33/64 ,  H01S5/024 ,  H05K7/20

CPC classification number: H01L33/642 ,  H01L23/367 ,  H01L23/3677 ,  H01L24/81 ,  H01S5/024 ,  H01L2224/1134 ,  H01L2224/1308 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12042 ,  H01L33/647 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4025

Abstract: A connecting structure (23) for establishing a thermal connection between at lest two components (21, 22) composed of materials with different expansion coefficients, wherein at least one component forms an electronic power element (21) and higher-melting-point materials are used for the contacting, which higher-melting-point materials form isolated connecting elements (29) between the contact surfaces (27, 28) of the components (21, 22).

Abstract translation: 一种连接结构（23），用于在至少两个由不同膨胀系数的材料组成的组件（21,22）之间建立热连接，其中至少一个部件形成电子功率元件（21）和较高熔点的材料 用于接触，哪些较高熔点的材料在部件（21,22）的接触表面（27,28）之间形成隔离的连接元件（29）。

公开(公告)号：US09649711B2

公开(公告)日：2017-05-16

申请号：US13982837

申请日：2012-01-30

Applicant: Ghassem Azdasht

Inventor： Ghassem Azdasht

IPC: B23K1/005 ,  B23K26/02 ,  B23K35/362 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: B23K1/0056 ,  B23K26/02 ,  B23K35/362 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16221 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75263 ,  H01L2224/81065 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/8191 ,  H01L2224/81986 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method for electrically contacting terminal faces of two substrates, such as a chip and a carrier substrate, includes two successive phases. In a first phase, the chip is positioned with its terminal faces against terminal faces of the substrate and laser energy is applied to the chip at the rear. In a second phase, a flux medium is applied and laser energy is applied to the rear of the chip to cause reflow. The device for performing the second phase of the method comprises a carrier table and a housing, which form a housing interior with a top side of the carrier table which receives the component arrangement, and a laser light source, which is oriented so that the laser radiation impinges on the rear side of the first substrate.

公开(公告)号：US09327360B2

公开(公告)日：2016-05-03

申请号：US12523788

申请日：2008-01-24

Applicant: Ghassem Azdasht

Inventor： Ghassem Azdasht

IPC: B23K9/16 ,  B23K31/00 ,  B23K1/005 ,  B23K1/00 ,  B23K3/06 ,  H05K3/34

CPC classification number: B23K1/0056 ,  B23K1/0016 ,  B23K3/0623 ,  B23K2101/40 ,  H01L2224/1302 ,  H01L2224/16105 ,  H01L2224/16227 ,  H05K3/3442 ,  H05K3/3478 ,  H05K3/3494 ,  H05K2201/10727 ,  H05K2203/0195 ,  H05K2203/0285 ,  H05K2203/041 ,  H05K2203/082 ,  H05K2203/107 ,  Y02P70/613 ,  H01L2924/00012

Abstract: The invention relates to a method and a device for contacting a solder ball formation, in which a plurality of contact mouthpieces arranged in a formation is used to pick up a solder ball formation with a composition reflecting the relative arrangement of the contact mouthpieces from a solder ball reservoir comprising a multitude of randomly distributed solder balls, the solder ball formation is placed on contact points by means of the contact mouthpieces for subsequently contacting, and subsequently the solder balls are impinged with laser energy by means of the contact mouthpieces for thermal connection with the contact points.

Abstract translation: 本发明涉及一种用于接触焊球形成的方法和装置，其中布置在地层中的多个接触嘴用于拾取焊球形成，其中组合反映了接触嘴从焊料的相对布置 球储存器包括多个随机分布的焊球，焊球形成通过接触嘴放置在接触点上，用于随后接触，随后焊球通过接触嘴撞击以与热连接 联络点。