公开(公告)号：WO1994027871A1

公开(公告)日：1994-12-08

申请号：PCT/US1994005847

申请日：1994-05-26

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  SHEA, David, B.

IPC: B65D05/56

CPC classification number: B65D77/02 ,  B65D77/042 ,  B65D81/38 ,  B65D81/3853 ,  B65D81/3897

Abstract: A shipping container system comprises an inner liner (1) for insertion into an inner shipping container (15), for insertion into an outer shipping container (16). The inner liner (1) comprises a layer of single- or double-bubble radiant barrier material (13) within a sealed vinyl pouch (21). Between the outer container (6) and the inner container (5) there is furnished at least one spacer tray (3), for providing a partially-surrounding pocket of air in contact with the exterior surface of the inner container (5). During sealing of the pouch (21), a pocket of air is allowed to remain in its interior so that the radiant barrier material (13) floats within the sealed pouch (21). The pockets of air provided allow for maximization of the thermal insulating properties of the system due primarily to the thermal reflective property of the radiant barrier material. The vinyl construction of the pouch material provides a durable protective cover for the radiant barrier material.

Abstract translation: 运输容器系统包括用于插入内部运输容器（15）中的内衬（1），用于插入到外运输容器（16）中。 内衬垫（1）包括在密封的乙烯基袋（21）内的单层或双气泡辐射阻挡材料层（13）。 在外部容器（6）和内部容器（5）之间设置有至少一个间隔托盘（3），用于提供与内部容器（5）的外表面接触的部分环绕的空气袋。 在密封袋（21）期间，允许空气袋保持在其内部，使得辐射阻挡材料（13）浮在密封袋（21）内。 提供的空气袋允许主要由于辐射屏障材料的热反射性能而使系统的绝热性能最大化。 袋材料的乙烯基结构为辐射屏障材料提供耐用的保护罩。

公开(公告)号：WO1993018530A1

公开(公告)日：1993-09-16

申请号：PCT/US1993001469

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES, INC.

Inventor： RADIANT TECHNOLOGIES, INC. ,  EVANS, Joseph, Tate, Jr. ,  BULLINGTON, Jeff, Allen ,  MONTROSS, Carl, Elijah, Jr.

IPC: H01G04/10

CPC classification number: H01L28/55 ,  Y10T29/435

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer (203) is used to separate various components comprising ferroelectric materials (208) or platinum (202) is disclosed. The invention prevents interactions between the SiO2 buffer layer (203) and the ferroelectric materials (208). The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer (203) is deposited directly over a platinum region (202) on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material (208) and which is also an electrical insulator to separate the SiO2 layer (203) from the ferroelectric material (208) and/or the platinum regions (202).

Abstract translation: 公开了一种用于构建集成电路结构的改进方法，其中使用缓冲层SiO 2层分离包含铁电材料或铂的各种组分。 本发明防止了SiO 2缓冲层与铁电材料之间的相互作用。 本发明还防止当SiO 2层直接沉积在电路表面上的铂区域上时通常观察到的SiO 2中的开裂。 本发明利用了相对于铁电材料基本上是惰性的材料的缓冲层，其也是用于将SiO 2层与铁电材料和/或铂区分离的电绝缘体。

公开(公告)号：DE69614674D1

公开(公告)日：2001-09-27

申请号：DE69614674

申请日：1996-03-09

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS TATE ,  WARREN L ,  TUTTLE A

IPC: H01L21/8247 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

Abstract: An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

公开(公告)号：DE69318294T2

公开(公告)日：1998-11-26

申请号：DE69318294

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF ,  MONTROSS CARL

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/768

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.

公开(公告)号：AU6871098A

公开(公告)日：1998-11-11

申请号：AU6871098

申请日：1998-03-26

Applicant: RADIANT TECHNOLOGIES INC

Inventor： WOMACK RICHARD H

IPC: G11C7/06 ,  G11C7/14 ,  G11C7/02

Abstract: A sense amplifier for comparing the resistance of a reference cell connected to a reference bit line to the resistance of a data cell connected to a data bit line. The amplifier includes a first terminal for connecting the sense amplifier to the reference bit line and a second terminal for connecting the sense amplifier to the data bit line. A reference current to voltage amplifier is connected to the first terminal for generating a reference voltage related to the current flowing through the reference bit line and for maintaining the first terminal at a reference potential when the current flowing through the reference bit line is less than a first current value. A data current to voltage amplifier is connected to the second terminal for generating a data voltage related to the current flowing through the data bit line and for maintaining the second terminal at the reference potential when the current flowing through the data bit line is less than a second current value. A comparitor compares the reference and data voltages. The data current to voltage amplifier includes an operational amplifier for measuring the difference between a potential on a first conductor and the potential on the data bit line. The operational amplifier allows the reference potential to be set at a lower voltage than is available in prior art designs. The invention utilizes a capacitive dividing scheme for pre-charging the bit lines prior to connecting the sense amplifier.

公开(公告)号：DE69318294D1

公开(公告)日：1998-06-04

申请号：DE69318294

申请日：1993-02-18

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF ,  MONTROSS CARL

IPC: H01L27/04 ,  G11C11/22 ,  H01G4/10 ,  H01G7/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L21/3205 ,  H01L21/768

Abstract: An improved method for constructing integrated circuit structures in which a buffer SiO2 layer is used to separate various components comprising ferroelectric materials or platinum is disclosed. The invention prevents interactions between the SiO2 buffer layer and the ferroelectric materials. The invention also prevents the cracking in the SiO2 which is commonly observed when the SiO2 layer is deposited directly over a platinum region on the surface of the circuit. The present invention utilizes a buffer layer of material which is substantially inert with respect to the ferroelectric material and which is also an electrical insulator to separate the SiO2 layer from the ferroelectric material and/or the platinum regions.

公开(公告)号：AU3894597A

公开(公告)日：1998-02-20

申请号：AU3894597

申请日：1997-07-25

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH T JR

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

Abstract: A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400 DEG C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts is typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

公开(公告)号：DE69121200T2

公开(公告)日：1997-02-20

申请号：DE69121200

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH ,  BULLINGTON JEFF

IPC: G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02F1/01 ,  G02B5/23

Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.

公开(公告)号：AT141012T

公开(公告)日：1996-08-15

申请号：AT91910220

申请日：1991-05-06

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN

IPC: G02F1/01 ,  G02B6/35 ,  G02F1/29 ,  G02F1/313 ,  G02B5/23

Abstract: A light activated switching device is disclosed in which the receipt of a light signal is used to switch a light beam between two output ports. The input light beam is reflected from an interface between two regions having different indices of refraction when the light signal is present. The reflected light beam then exits through the first output port. In the absence of the light signal, the two regions have the same index of refraction, and the light beam passes through both regions and exits through the second output port.

公开(公告)号：AU7478494A

公开(公告)日：1995-04-03

申请号：AU7478494

申请日：1994-07-28

Applicant: RADIANT TECHNOLOGIES INC

Inventor： EVANS JOSEPH TATE JR ,  BULLINGTON JEFF ALLEN

IPC: H01L21/02 ,  H01L27/115 ,  H01L21/44 ,  H01L27/105

Abstract: A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800 DEG C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.