Abstract:
A method of fabricating a tungsten contact in a semiconductor device, the method including the steps of: (a) providing a silicon wafer structure including a dielectric layer and an underlying layer selected from a semiconductor or electrically conductive material, the dielectric layer being patterned to expose a contact portion of the underlying layer; and (b) depositing by chemical vapour deposition a tungsten layer over the dielectric layer and the contact portion, the deposition being carried out by reaction of a tungsten- containing component and a reducing agent which are introduced into the vicinity of the silicon wafer structure, the deposition step having a first phase in which the process conditions are controlled to form a seed layer of tungsten on the dielectric layer and a second phase in which the process conditions are modified from the first phase to form a blanket tungsten layer over the seed layer which acts as an adhesion layer between the dielectric layer and the blanket tungsten layer. The invention also provides a semiconductor device incorporating a tungsten contact which is disposed in a contact hole of a dielectric layer, the tungsten contact including a seed layer of tungsten which extends over the dielectric layer surface and an overlying layer of blanket tungsten.
Abstract:
A fully associative cache memory for virtual addressing comprises a data RAM (50), a first CAM cell array (51) for holding virtual page addresses which each require address translation to identify a physical page in a main memory, a second CAM cell array (52) holding line or word in page addresses which remain the same for virtual and physical addresses, a physical address memory (53) for holding physical page addresses for the main memory corresponding to virtual page addresses in said first array (51), said first array (51) being connected both to said physical address memory (52) to access said physical address memory in response to a hit output from said first CAM cell array and to control circuitry (57) coupled between said first and second arrays (51,52) and the data RAM (50) to access the data RAM (50) in response to hit outputs from both said first and second CAM cell arrays (51,52).
Abstract:
A memory is provided with at least one temporary store (21,22) and write abort circuitry (41,42) having a control signal store (41) and gating circuitry (43,44) responsive to an output from the control signal store. Write circuitry loads data and an associated address in the temporary store (21,22) during one write cycle and transfer circuitry (13,23) transfers the data to the associated address during a subsequent write cycle when the write operation is not to be aborted. Read circuitry includes a comparator (27) for comparing a read address with an address in the temporary store (22) and transfer circuitry includes selection circuitry (24) to select an output of data either from the temporary store (21) or the memory (11) dependent on the output of the comparator circuitry (27), an output from the temporary store (21) being prevented if the control signal store (41) indicates that the write operation is to be aborted.
Abstract:
A routing switch (1) includes an input (4a) for receiving serial packets from a source node in a computer network, a plurality of outputs (6a...6n) each designating a respective range of destination node identifications, switch circuitry (10) for selectively interconnecting said input to a selected one of said outputs and header reading circuitry (22) for reading the header portion of a packet received at the input prior to receiving all of the packet. The header reading circuitry is coupled to the switch circuitry (10) to connect to said input one of said outputs having a node identification range including the node identification of said header portion. There is also provided a computer network, having a plurality of computer devices and at least one routing switch, and a method of routing messages through such a network.
Abstract:
A decoder has a plurality of outputs (R o -R N ) each associated with a particular output value and is arranged to add together two binary numbers (A, B) and to select one of said outputs in dependence on the result of said sum. The decoder comprises a plurality of logic circuits each arranged to receive respective bits of both first and second binary numbers to be added together said logic circuits being arranged to provide, for each output value, a respective result in dependence on the logic states of said bits and on the logic states of respective bits of binary numbers representing the particular output value of the decoder; and logic means for determining when a predetermined condition is satisfied by all the results of the logic circuits associated with an output value of the decoder, whereby that output value is selected. In the preferred embodiment, for adding together two n bit numbers, there are n+l logic circuits (L), each arranged to receive the ith and i-lth bits (Ai, Ai-l, Bi, Bi-l) of first and second n bit numbers, and each arranged to provide an output in dependence on the logic states of said bits and on the logic states of the ith and i-lth bits (Qi, Qi-l) of respective binary numbers which are the ones complement of binary numbers R o ...R N representing each respective output value of the decoder in accordance with the following expression: Ai ⊕ Bi ⊕ Qi ⊕ (Ai-l-Bi-l + Qi-l. (Ai-l + Bi-l)). The predetermined condition is then satisfied when the above expression has a logic value of ONE. A plurality of AND gates are associated respectively with the outputs of the decoder and are each arranged to receive the outputs of the n+l logic circuits for each output value of the decoder. The decoder performs addition and decoding in one step.
Abstract:
A method of forming a well of one conductivity type in a silicon substrate, which method comprises the steps of:- (a) providing a silicon substrate having a first surface region thereof which is doped with a dopant of one conductivity type and a second surface region thereof which is doped with a dopant of opposite conductivity type, the first and second regions being covered by respective first and second portions of an oxide layer which has been grown on the silicon substrate, the first portion being thicker than the second portion; (b) oxidizing the substrate thereby to increase the thickness of the oxide layer such that the difference in thickness between the first and second portions is reduced; (c) heating the substrate to cause diffusion of the said dopant of one conductivity type thereby to form a well of said one conductivity type in the substrate and also diffusion of the said dopant of opposite conductivity type down into the substrate, the heating step being carried out before, during or after oxidizing step (b); and (d) removing the oxide layer thereby to expose the substrate surface which has a step in the region of the well boundary.
Abstract:
A decoder has a plurality of outputs (R o -R N ) each associated with a particular output value and is arranged to add together two binary numbers (A, B) and to select one of said outputs in dependence on the result of said sum. The decoder comprises a plurality of logic circuits each arranged to receive respective bits of both first and second binary numbers to be added together said logic circuits being arranged to provide, for each output value, a respective result in dependence on the logic states of said bits and on the logic states of respective bits of binary numbers representing the particular output value of the decoder; and logic means for determining when a predetermined condition is satisfied by all the results of the logic circuits associated with an output value of the decoder, whereby that output value is selected. In the preferred embodiment, for adding together two n bit numbers, there are n+l logic circuits (L), each arranged to receive the ith and i-lth bits (Ai, Ai-l, Bi, Bi-l) of first and second n bit numbers, and each arranged to provide an output in dependence on the logic states of said bits and on the logic states of the ith and i-lth bits (Qi, Qi-l) of respective binary numbers which are the ones complement of binary numbers R o ...R N representing each respective output value of the decoder in accordance with the following expression:
Ai ⊕ Bi ⊕ Qi ⊕ (Ai-l-Bi-l + Qi-l. (Ai-l + Bi-l)).
The predetermined condition is then satisfied when the above expression has a logic value of ONE. A plurality of AND gates are associated respectively with the outputs of the decoder and are each arranged to receive the outputs of the n+l logic circuits for each output value of the decoder. The decoder performs addition and decoding in one step.
Abstract:
A method of fabricating an electrical contact in a semiconductor device, the method comprising the steps of:- (a) providing on an underlying silicon substrate (2) a reflowable interlevel dielectric material (14) having a contact opening exposing a contact region of the silicon substrate; (b) heating the silicon substrate and the interlevel dielectric material by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer (20) in the contact region and to reflow the dielectric material; (c) depositing a layer of transition metal (28) over the reflowed dielectric material and the control layer; and (d) converting at least part of the transition metal layer into a metallurgic barrier.
Abstract:
A line delay device comprises a memory having RAM cells in two blocks (14,15), each cell being connected to a pair of bit lines. Memory locations in one block (14) are addressed sequentially and subject to a data transfer while an equate operation is effected on the bit lines of the other block (15). The operations are switched alternately between the two blocks (14,15). In each accessing cycle a plurality of locations are addressed in selected rows of each block (14,15) and the switching between each block is effected without addressing all locations in each row addressed so that the accessing cycle ends in a different block (15) from the starting block (14) and each row used has a plurality of addressed locations.
Abstract:
A communications device, particularly but not exclusively for use with a routing circuit is arranged to transmit and receive message packets. It comprises an output buffer (42) which operates to convert data and flow control information into a plurality of bit sequences and to transmit them at a predetermined frequency. An input buffer is operable to decode incoming sequences into data items and flow control information. The input buffer (44) can store the data items and count them and transmit flow control information to the output buffer. A method of encoding the bit sequences as balanced six-bit codes is also described.