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公开(公告)号：KR1020120061466A
公开(公告)日：2012-06-13
申请号：KR1020100122794
申请日：2010-12-03
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A low pass filter using a BAWR(Bulk Acoustic Wave Resonator) is provided to reduce the size of a low-pass filter by using a BAWR of a serial segment having different resonant frequencies. CONSTITUTION: An input terminal(210) is connected to a first RF(Radio Frequency) device. An output terminal(220) is connected to a second RF device. The output terminal transfers a signal filtered by a low-pass filter through a parallel segment(230), a first serial segment(240), and a second serial segment(250) to the second RF device. The parallel segment is parallely connected between the input terminal and the output terminal. The parallel segment includes a first BAWR(231), a third BAWR(233), and a fifth BAWR(235). The first serial segment is serially connected between the input terminal and the output terminal. The second serial segment is serially connected between the input terminal and the output terminal.
Abstract translation: 目的：提供使用BAWR（体声波谐振器）的低通滤波器，通过使用具有不同谐振频率的串行片段的BAWR来减小低通滤波器的尺寸。 构成：输入端子（210）连接到第一RF（射频）装置。 输出端子（220）连接到第二RF装置。 输出端子将由低通滤波器滤波的信号通过并行段（230），第一串行段（240）和第二串行段（250）传送到第二RF设备。 并联段并联连接在输入端和输出端之间。 并行段包括第一BAWR（231），第三BAWR（233）和第五BAWR（235）。 第一串行段串联连接在输入端和输出端之间。 第二串行段串联连接在输入端和输出端之间。
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公开(公告)号：KR1020120049665A
公开(公告)日：2012-05-17
申请号：KR1020100111045
申请日：2010-11-09
Applicant: 삼성전자주식회사
CPC classification number: H03H7/38 , H03H9/54 , H03H2007/386
Abstract: PURPOSE: A matching segment circuit for a radio frequency and a radio frequency integrated device using the same are provided to improve the performance of a duplexer by using a duplexer including a matching segment circuit for an RF. CONSTITUTION: A matching segment circuit for an RF(Radio Frequency) comprises an input terminal(110), a parallel segment(120), and a serial segment(130), and an output terminal(140). The input terminal is composed of a single input port. The input terminal is connected to an external first RF device. The parallel segment is composed of a parallel structure of a first inductor(123) and a first capacitor(121). The serial segment is serially connected to the parallel segment. The serial segment is composed of a second inductor(131) and a second capacitor(133). The output terminal is composed of a single output port.
Abstract translation: 目的：提供一种用于射频的匹配段电路和使用其的射频集成装置，以通过使用包括用于RF的匹配段电路的双工器来改善双工器的性能。 构成：用于RF（射频）的匹配段电路包括输入端（110），并联段（120）和串行段（130）以及输出端（140）。 输入端子由单个输入端口组成。 输入端子连接到外部第一RF器件。 并联段由第一电感器（123）和第一电容器（121）的并联结构组成。 串行段串联连接到并行段。 串行段由第二电感器（131）和第二电容器（133）构成。 输出端子由单个输出端口组成。
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公开(公告)号：KR1020120028780A
公开(公告)日：2012-03-23
申请号：KR1020100090811
申请日：2010-09-15
Applicant: 삼성전자주식회사
IPC: H01L25/065 , H01L23/13 , H01L23/538 , H01L23/66 , H01L25/16 , H01P1/208
CPC classification number: H01L23/66 , H01L23/13 , H01L23/5385 , H01L25/0652 , H01L25/0657 , H01L25/16 , H01L2223/6616 , H01L2224/16225 , H01L2224/48227 , H01L2225/0652 , H01L2225/06548 , H01L2225/06572 , H01L2924/01322 , H01L2924/15311 , H01L2924/3011 , Y10T29/49165 , H01P1/2088 , H01L2924/00
Abstract: PURPOSE: An RF stacked module and an arranging method thereof are provided to minimize interference between a device and a wire by using the RF stacked module through a 3D vertical wire. CONSTITUTION: A first wafer(110) includes a first penetration hole(111,113,115) and a first RF device(117). A second wafer(120) includes a second RF device and a second penetration hole corresponding to the first penetration hole. A vertical wire is connected to the first penetration hole and the second penetration hole. A penetration electrode is connected to an external device through the bottom of the first penetration hole or the top of the second penetration hole.
Abstract translation: 目的：提供RF堆叠模块及其布置方法，以通过使用RF堆叠模块通过3D垂直线来最小化设备和线之间的干扰。 构成：第一晶片（110）包括第一穿透孔（111,113,115）和第一RF器件（117）。 第二晶片（120）包括对应于第一穿透孔的第二RF器件和第二穿透孔。 垂直线连接到第一穿透孔和第二穿透孔。 穿透电极通过第一穿透孔的底部或第二穿透孔的顶部连接到外部装置。
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公开(公告)号：KR1020110131460A
公开(公告)日：2011-12-07
申请号：KR1020100050907
申请日：2010-05-31
Applicant: 삼성전자주식회사
CPC classification number: H03H7/12 , H03H7/0115 , H03H2007/013
Abstract: PURPOSE: A broadband tunable band-pass filter is provided to selectively filter a broadband by selecting a necessary band using a tunable dual band resonator and a tunable inverter. CONSTITUTION: In a broadband tunable band-pass filter, a tunable dual band resonator forms two resonance points which are variable according to an applied voltage. Tunable inverters(210, 220) select one of two resonance points according to the applied voltage. The tunable inerter generates notches having different frequency bands. The tunable inverter is connected in parallel in an inductor and a variable capacitor. The variable capacitor changes the frequency band by passing the tunable inverter notch.
Abstract translation: 目的：提供宽带可调带通滤波器，通过使用可调谐双频带谐振器和可调谐逆变器选择必要的频带来选择性地过滤宽带。 构成：在宽带可调谐带通滤波器中，可调谐双波段谐振器形成两个可根据施加电压而变化的共振点。 可调谐逆变器（210,220）根据施加的电压来选择两个谐振点中的一个。 可调谐的inerter产生具有不同频带的缺口。 可调谐逆变器并联在电感器和可变电容器中。 可变电容器通过传递可调谐的逆变器陷波来改变频带。
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公开(公告)号：KR1020110080491A
公开(公告)日：2011-07-13
申请号：KR1020100000745
申请日：2010-01-06
Applicant: 삼성전자주식회사
IPC: H01L23/28
CPC classification number: H01L23/3128 , H01L21/565 , H01L21/568 , H01L21/6835 , H01L23/5389 , H01L24/24 , H01L2224/12105 , H01L2224/24195 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2924/15192 , H01L2924/15311 , H01L2924/181 , H01L2924/19105 , H01L2924/00
Abstract: PURPOSE: A method for manufacturing a semiconductor chip package is provided to increase mounting space utilization rate of a semiconductor chip package and to enhance performance by rearranging wanted active devices. CONSTITUTION: A plurality of passive devices(P) and a semiconductor chip(A) are arranged in a vacant space near the semiconductor chip on a prepared film(30), and gets molded. After the film is eliminated, an adhesive layer is formed on the eliminate region and a conductive layer is attached on the adhesive layer. The conductive layer is etched and a conductive circuit pattern is formed. A plurality of conductive pads electrically connecting the conductive circuit pattern to the semiconductor chip and a passive device is provided.
Abstract translation: 目的：提供一种用于制造半导体芯片封装的方法，以增加半导体芯片封装的安装空间利用率，并通过重新布置所需的有源器件来提高性能。 构成：将多个无源器件（P）和半导体芯片（A）布置在制备的膜（30）上的半导体芯片附近的空白空间中，并被模制。 在消除膜之后，在消除区域上形成粘合剂层，并且在粘合剂层上附着导电层。 导电层被蚀刻并形成导电电路图案。 提供将导电电路图案与半导体芯片电连接的多个导电焊盘和无源器件。
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Patent Agency Ranking
公开(公告)号：KR1020110032197A
公开(公告)日：2011-03-30
申请号：KR1020090089581
申请日：2009-09-22
Applicant: 삼성전자주식회사
CPC classification number: H01Q1/2208 , H01Q1/243 , H01Q1/38 , H01Q11/083
Abstract: PURPOSE: The portable apparatus offering ultra-wideband. Antenna is arranged to the center of instrument. The size of the portable apparatus is miniaturized. CONSTITUTION: The portable apparatus(100) arranges the camera(110), speaker(120), vibrator(130), controller(140), the memory(145), first, 2 modems(150, 155), first, 2 antennas, the RF module(180), power supply unit(190), battery(195). The first, and 2 antenna comprise the respective slot, and microstrip.
Abstract translation: 目的：提供超宽带的便携式设备。 天线安排在仪器的中心。 便携式设备的尺寸小型化。 构成：便携式设备（100）将照相机（110），扬声器（120），振动器（130），控制器（140），存储器（145），第一，第二调制解调器（150,155） RF模块（180），电源单元（190），电池（195）。 第一和第二天线包括相应的槽和微带。
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公开(公告)号：KR1020100073748A
公开(公告)日：2010-07-01
申请号：KR1020080132502
申请日：2008-12-23
Applicant: 삼성전자주식회사
CPC classification number: H01L23/10 , H01L21/50 , H01L21/76898 , H01L25/50 , H01L27/14601 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A substrate level bonding method and a substrate level package are provided to apply superior bonding force regardless of the surface shape of a substrate by adopting a dry-film resist(DFR) as an adhesive material. CONSTITUTION: A first substrate including a plurality of substrate units is prepared(S10). The substrate units are spaced apart by holes. A first DFR layer is formed on the first surface of the first substrate(S20). Substrate adhered parts of the first DFR layer which covers each substrate unit is partially hardened(S30). Parts of the first DFR layer which corresponds to the holes are removed(S40). The external surface of the substrate adhered parts are attached to a second substrate(S50).
Abstract translation: 目的：通过采用干膜抗蚀剂（DFR）作为粘合剂材料，提供了与衬底的表面形状无关的优异结合力的衬底水平焊接方法和衬底层封装。 构成：准备包括多个基板单元的第一基板（S10）。 基板单元由孔隔开。 在第一基板的第一表面上形成第一DFR层（S20）。 覆盖每个基板单元的第一DFR层的基板粘合部分被部分硬化（S30）。 去除与孔对应的第一DFR层的部分（S40）。 将基板粘接部的外表面安装在第二基板上（S50）。
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公开(公告)号：KR1020090044803A
公开(公告)日：2009-05-07
申请号：KR1020070111060
申请日：2007-11-01
Applicant: 삼성전자주식회사
IPC: H03H9/02
CPC classification number: H03H9/171 , H03H2009/02173
Abstract: 튜너블 공진기가 개시된다. 튜너블 공진기는, 공진을 수행하는 FBAR 및, FBAR의 일 측에 배치되며, 외부 신호에 따라 변형되어 FBAR에 접촉함으로써 FBAR의 공진 주파수를 변화시키는 적어도 하나의 구동부를 포함한다. 이에 따라, 멀티 밴드(multi band) 집적화나 원칩(one-chip)화를 MEMS 기술을 이용하여 간단하게 구현할 수 있으며, 대량 생산도 가능하게 된다.
FBAR, 캔틸레버, 브리지, 멤브레인, 튜너블 공진기-
公开(公告)号：KR100750736B1
公开(公告)日：2007-08-22
申请号：KR1020050093791
申请日：2005-10-06
Applicant: 삼성전자주식회사
CPC classification number: H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
Abstract: 하나의 트리밍인덕터를 사용하는 필터가 개시된다. 본 필터는, 외부단자와 전기적 연결이 가능한 제1포트, 제2포트, 및, 접지포트가 상부 표면에 형성된 기판, 기판 상에서 제1포트 및 제2포트를 직렬로 연결하는 제1 및 제2 직렬공진기, 기판 상에서 제1포트 및 제1직렬공진기 사이에 형성되는 노드에 연결되는 제1병렬공진기, 기판 상에서 제1 및 제2 직렬공진기 사이에 형성되는 노드에 연결되는 제2병렬공진기, 및, 일측이 제1 및 제2 병렬공진기 각각과 연결되며, 타측이 접지포트에 연결되는 트리밍인덕터를 포함한다. 이에 따라, 소형의 고성능 필터를 구현할 수 있게 된다.
필터, 트리밍 인덕터, FBAR, 직렬공진기, 병렬공진기-
公开(公告)号：KR100636823B1
公开(公告)日：2006-10-23
申请号：KR1020040112700
申请日：2004-12-27
Applicant: 삼성전자주식회사
IPC: H01L29/00
CPC classification number: B81B7/007
Abstract: 본 발명에 의한 MEMS 소자 패키지는, MEMS 활성소자가 상면에 형성되어 있는 소자용 기판, MEMS 활성소자가 위치하는 공간을 제공하도록 MEMS 활성소자의 양측에 배치되며 MEMS 활성소자에 전기적으로 연결된 내부전극패드, 내부전극패드의 외곽에 배치되는 실링패드, 실링패드를 통하여 소자용 기판과 결합되며 내부전극패드에 위치하는 부분에 비아홀이 형성된 덮개용 기판, 그리고, 비아홀을 통하여 내부전극패드와 전기적인 접속을 이루도록 덮개용 기판의 상면에 형성된 외부전극패드를 포함한다. 내부전극패드와 실링패드는 Au으로 형성되며, 따라서, 소자용 기판과 덮개용 기판은 실링패드에 의해 Au-Au 다이렉트 본딩된다.
MEMS, 소자, 패키지, 웨이퍼, 기판, 비아홀, Au, 전극, 실링Abstract translation: 根据本发明的MEMS器件封装包括：用于元件的衬底，其具有形成在其上表面上的MEMS有源元件;内部电极焊盘，布置在MEMS有源元件的两侧并且电连接到MEMS有源元件; 加上通过密封垫的元件基板，密封垫通孔设置在所述电极焊盘的电极焊盘，并通过部分覆盖基板的电连接，和一个外用于通路孔中的电极焊盘的位置处形成 并且在覆盖基板的上表面上形成外部电极焊盘。 内部电极焊盘和密封焊盘由Au形成，使得用于器件的衬底和用于盖的衬底通过密封垫直接结合Au-Au。
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