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公开(公告)号：KR101570874B1
公开(公告)日：2015-11-23
申请号：KR1020080132502
申请日：2008-12-23
Applicant: 삼성전자주식회사
CPC classification number: H01L23/10 , H01L21/50 , H01L21/76898 , H01L25/50 , H01L27/14601 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: 기판단위본딩방법및 기판단위패키지를제공한다. 기판단위패키지는복수의단위기판부들과, 베이스기판과, 복수의기판접착부들을포함한다. 단위기판부들은홀에의하여이격배치된다. 베이스기판은단위기판부들과대향배치된다. 복수의기판접착부들은단위기판부들및 베이스기판사이에개재되어서이들을본딩시키는것으로서, 적어도일부분이비경화된 DFR(Dry Film Resist) 소재로이루어진다. 따라서, 접착물질로서 DFR의주요부분이경화되지않은상태로기판과본딩되기때문에, 기판의표면상태에관계없이본딩능력이우수하게된다.
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公开(公告)号：KR101484520B1
公开(公告)日：2015-01-22
申请号：KR1020080000658
申请日：2008-01-03
Applicant: 삼성전자주식회사
Abstract: MEMS 구동기가 개시된다. 본 MEMS 구동기는, 복수의 단 형태로 이루어지는 고정 돌출부를 구비한 고정 전극부, 및, 고정 전극부와의 거리가 변화되도록 변위 가능하며, 고정 전극부와의 거리에 따라 고정 돌출부와의 간격이 변하는 이동 돌출부를 구비한 이동 전극부를 포함한다. 이에 의해 낮은 구동 전압으로 구동이 가능하며, 삽입 손실 특성이 개선된다.
MEMS 구동기, MEMS 스위치-
公开(公告)号：KR1020110131454A
公开(公告)日：2011-12-07
申请号：KR1020100050899
申请日：2010-05-31
Applicant: 삼성전자주식회사
CPC classification number: H01H1/0036 , B81B3/0097 , B81B7/007 , H01H59/0009
Abstract: PURPOSE: A multi stage actuation MEMS switch is provided to help a user to operate an MEMS switch in a low driving voltage by driving the MEMS switch by two stages or more than. CONSTITUTION: In a multi stage actuation MEMS switch, a first stage driving unit is formed in one side of a substrate(211). A second stage driving unit is formed in the top of a substrate. A first electrode(218) is formed in one side of the substrate and is combined with the first stage driving unit. A second electrode(222) is formed in one side of the substrate and is combined with the second stage driving unit. First and second driving electrodes(213, 214) generates constant power when receiving the driving voltage. The first and second driving electrodes are combined with one side of the substrate together with an insulator.
Abstract translation: 目的：提供多级致动MEMS开关，以通过将MEMS开关驱动两级或更多级来帮助用户在低驱动电压下操作MEMS开关。 构成：在多级致动MEMS开关中，第一级驱动单元形成在衬底（211）的一侧。 第二级驱动单元形成在基板的顶部。 第一电极（218）形成在基板的一侧，并与第一级驱动单元组合。 第二电极（222）形成在基板的一侧，并与第二级驱动单元组合。 第一和第二驱动电极（213,214）在接收驱动电压时产生恒定的功率。 第一和第二驱动电极与绝缘体一起与衬底的一侧组合。
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公开(公告)号：KR1020110138663A
公开(公告)日：2011-12-28
申请号：KR1020100058682
申请日：2010-06-21
Applicant: 삼성전자주식회사
CPC classification number: H01H59/0009 , B81B7/04 , H01H2221/06
Abstract: PURPOSE: A micro switch with a compact structure is provided to perform scale down and achieve mechanical stability and superior quality by being manufactured by a low temperature process. CONSTITUTION: A micro switch(100) comprises a pause uneven electrode(110), an operation uneven electrode(120), a driving shaft(130), a contact unit(140), and a connection terminal(150). The pause uneven electrode is extended to a first direction in the upper side of a substrate. The operation uneven electrode is corresponded to the pause uneven electrode and is arranged to be parallel to the uneven electrode at a certain interval. The driving shaft is connected with the operation uneven electrode and the first direction to a vertical direction. The contact unit is formed in the one end of the driving shaft. The connection terminal is placed in the traveling direction of the contact unit and the driving shaft and performs switching with the contact unit.
Abstract translation: 目的：提供具有紧凑结构的微动开关，通过低温工艺制造，实现缩小，实现机械稳定性和优质。 构成：微型开关（100）包括暂停不均匀电极（110），操作不均匀电极（120），驱动轴（130），接触单元（140）和连接端子（150）。 暂停不均匀电极在衬底的上侧延伸到第一方向。 操作不均匀电极对应于暂停不均匀电极，并且以一定间隔布置成平行于不均匀电极。 驱动轴与操作不均匀电极连接，第一方向与垂直方向连接。 接触单元形成在驱动轴的一端。 连接端子位于接触单元和驱动轴的行进方向上，并与接触单元进行切换。
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公开(公告)号：KR100447851B1
公开(公告)日：2004-09-08
申请号：KR1020020070876
申请日：2002-11-14
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: B81C1/00269 , B81C2203/035 , H01L24/81 , H01L2224/0401 , H01L2224/05009 , H01L2224/13009 , H01L2224/81801 , H01L2224/9202 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L21/76898 , H01L2924/00
Abstract: A side-bonding method of a flip-chip semiconductor device, a MEMS device package and a package method using the same, in which firm bonding and insensitivity to surface roughness may be obtained, include forming a UBM on a bonding line of a lower substrate having a semiconductor device formed thereon, plating solder on the UBM on the lower substrate, forming a trench in the upper substrate to contact the lower substrate at a location corresponding to a location of the solder and forming a second UBM in the trench, coupling the upper substrate and the lower substrate by inserting the solder into the trench, and heating the upper substrate and the lower substrate at a temperature higher than a melting point of the solder so that the solder is wetted toward sides of the trench to bond the upper substrate and the lower substrate.
Abstract translation: 可以获得牢固结合并且对表面粗糙度不敏感的倒装芯片半导体器件，MEMS器件封装和使用该方法的封装方法的侧键方法包括在下基板的键合线上形成UBM 其上形成有半导体器件;在下基板上的UBM上电镀焊料;在上基板中形成沟槽，以在对应于焊料的位置的位置处接触下基板;以及在沟槽中形成第二UBM， 通过将焊料插入到沟槽中，并且在高于焊料的熔点的温度下加热上基板和下基板，使得焊料朝向沟槽的侧面润湿以接合上基板 和下基板。 ＆lt;图像＆GT;
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Patent Agency Ranking
公开(公告)号：KR1020100073748A
公开(公告)日：2010-07-01
申请号：KR1020080132502
申请日：2008-12-23
Applicant: 삼성전자주식회사
CPC classification number: H01L23/10 , H01L21/50 , H01L21/76898 , H01L25/50 , H01L27/14601 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A substrate level bonding method and a substrate level package are provided to apply superior bonding force regardless of the surface shape of a substrate by adopting a dry-film resist(DFR) as an adhesive material. CONSTITUTION: A first substrate including a plurality of substrate units is prepared(S10). The substrate units are spaced apart by holes. A first DFR layer is formed on the first surface of the first substrate(S20). Substrate adhered parts of the first DFR layer which covers each substrate unit is partially hardened(S30). Parts of the first DFR layer which corresponds to the holes are removed(S40). The external surface of the substrate adhered parts are attached to a second substrate(S50).
Abstract translation: 目的：通过采用干膜抗蚀剂（DFR）作为粘合剂材料，提供了与衬底的表面形状无关的优异结合力的衬底水平焊接方法和衬底层封装。 构成：准备包括多个基板单元的第一基板（S10）。 基板单元由孔隔开。 在第一基板的第一表面上形成第一DFR层（S20）。 覆盖每个基板单元的第一DFR层的基板粘合部分被部分硬化（S30）。 去除与孔对应的第一DFR层的部分（S40）。 将基板粘接部的外表面安装在第二基板上（S50）。
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公开(公告)号：KR1020090074937A
公开(公告)日：2009-07-08
申请号：KR1020080000658
申请日：2008-01-03
Applicant: 삼성전자주식회사
Abstract: An MEMS actuator, an MEMS switch and a manufacturing method of the same are provided to improve the insertion loss and to drive with the low driving voltage. An MEMS(micro electromechanical system) driver comprises: a fixed electrode part(120) in which a fixed protrusion consisting of a plurality of shift; and a movable electrode(130) capable of the displacement distance with the fixed electrode part. A movable protrusion is formed at the movable electrode. It is changed that the distance between the movable protrusion and the fixed protrusion according to the distance of the fixed electrode part. A plurality of shifts has the different area.
Abstract translation: 提供了MEMS致动器，MEMS开关及其制造方法，以改善插入损耗并以低驱动电压驱动。 MEMS（微机电系统）驱动器包括：固定电极部分（120），其中固定突起由多个位移组成; 以及能够与固定电极部分的位移距离的可动电极（130）。 可移动突起形成在可动电极处。 根据固定电极部的距离，改变可动突起与固定突起之间的距离。 多个班次具有不同的面积。
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8.发明公开
公开(公告)号：KR1020040042924A
公开(公告)日：2004-05-22
申请号：KR1020020070876
申请日：2002-11-14
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: B81C1/00269 , B81C2203/035 , H01L24/81 , H01L2224/0401 , H01L2224/05009 , H01L2224/13009 , H01L2224/81801 , H01L2224/9202 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/1461 , H01L21/76898 , H01L2924/00
Abstract: PURPOSE: A bonding method of flip-chip manner for a semiconductor apparatus in lateral bonded type, MEMS(Micro Electro Mechanical System) package using the same, and packaging method are provided to be capable of fixedly attaching the upper and lower substrate of the MEMS package regardless of the surface state of the substrates. CONSTITUTION: The first UBM(Under Bump Metallurgy) parts(400b) are formed along an adhesive line on a lower substrate(200). A solder part(500) is formed by carrying out a plating process on the UBM part. A trench is formed at an upper substrate(100) corresponding to the solder part. Then, the second UBM part is formed at the trench. The solder part of the lower substrate is inserted into the trench of the upper substrate. Then, the upper and lower substrate are attached to each other by heating the solder part to a melting point, or higher. At this time, the trench is wetted by the solder part to the lateral direction.
Abstract translation: 目的：提供一种横向粘合型半导体装置的倒装芯片接合方法，使用该半导体装置的MEMS（微机电系统）封装以及封装方法，能够固定安装MEMS的上下基板 封装，而不管基板的表面状态如何。 构成：第一UBM（低爆破冶金）部件（400b）沿着下基板（200）上的粘合线形成。 通过对UBM部件进行电镀处理来形成焊料部（500）。 在对应于焊料部分的上基板（100）上形成沟槽。 然后，第二UBM部分形成在沟槽处。 下基板的焊接部分插入上基板的沟槽中。 然后，通过将焊料部加热至熔点以上，使上下基板相互连接。 此时，沟槽被焊料部分沿横向方向润湿。
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公开(公告)号：KR101184612B1
公开(公告)日：2012-09-21
申请号：KR1020060078358
申请日：2006-08-18
Applicant: 삼성전자주식회사
Abstract: 고온공정이 가능하고 품질과 신뢰성을 향상시킬 수 있는 관통전극 형성방법, 이를 이용한 멤스 구조물 및 이의 제조방법이 개시된다. 본 발명은 상기 기판에 폐곡면 형태의 관통홀을 형성하여 상기 폐곡면 내측에 상기 기판 재질의 관통전극을 생성하고, 이러한 관통홀을 절연체로 충전하여, 상기 관통전극에 의해 전기적 신호가 전달될 수 있도록 구성된다. 따라서, 본 발명에 따르면 고온공정에 의해서도 관통전극이 액화되거나 변형되지 않으며, 제품의 품질과 신뢰성을 향상시킬 수 있다.
기판, 관통홀, 관통전극, 절연체, 멤스(MEMS)-
公开(公告)号：KR1020110131674A
公开(公告)日：2011-12-07
申请号：KR1020100051237
申请日：2010-05-31
Applicant: 삼성전자주식회사
IPC: H01L23/28 , H01L23/08 , H01L23/043
CPC classification number: H01L23/043 , H01L21/0274 , H01L23/481 , H01L23/522
Abstract: PURPOSE: A device protection cap which uses a photo-sensitive glass substrate and a manufacturing method thereof are provided to arrange a penetration hole by wet-etching the photo-sensitive glass substrate, thereby preventing the generation of scallop or footing phenomenon in an etched part. CONSTITUTION: A photo-sensitive glass substrate(101) protects a device while being installed in the upper part of a device substrate. A penetration hole(110) is arranged within the photo-sensitive glass substrate. A first metal wiring layer(120) is arranged in the inside of the penetration hole. A second metal wiring layer(130) is arranged in a partial area of the upper or lower surface of the photo-sensitive glass substrate. The second metal wiring layer is connected to the first metal wiring layer.
Abstract translation: 目的：使用光敏玻璃基板的装置保护盖及其制造方法，通过湿式蚀刻光敏玻璃基板来设置贯通孔，从而防止蚀刻部分产生扇贝或脚踏现象 。 构成：感光玻璃基板（101）在安装在装置基板的上部时保护装置。 穿透孔（110）布置在感光玻璃基板内。 第一金属布线层（120）布置在穿透孔的内部。 第二金属布线层（130）布置在感光玻璃基板的上表面或下表面的局部区域中。 第二金属布线层与第一金属布线层连接。
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