Abstract:
PURPOSE: A method for forming a dual damascene metal line using a low dielectric constant insulating layer is provided to be capable of preventing the generation of photoresist tail and facet phenomenon. CONSTITUTION: After sequentially forming a lower insulating layer(310), an upper etch stop layer(315), an upper insulating layer(320), a lower hard mask(325), and an upper hard mask(330) on a semiconductor substrate(300), a groove opening portion is formed by selectively patterning the upper hard mask for exposing the predetermined portion of the lower hard mask. Then, a planarization layer(340) is formed on the entire surface of the resultant structure. A hole opening portion is formed by sequentially patterning the planarization layer, the lower hard mask, and the upper hard mask for partially exposing the etch stop layer. Then, the patterned planarization layer is removed.
Abstract:
PURPOSE: An intermetal dielectric pattern and a method for forming the same are provided to be capable of preventing the generation of photoresist residuals and reducing the thickness of a photoresist layer deposited when carrying out a via hole patterning process by using an upper capping layer. CONSTITUTION: After forming a lower metal line(110) at the upper portion of a semiconductor substrate, an intermetal dielectric is formed on the entire surface of the resultant structure by sequentially depositing a lower insulating layer(130) and an upper insulating layer(150). A via hole(180) is formed by patterning the intermetal dielectric for exposing the upper surface of the lower metal line. An upper capping layer(190) is then formed on the entire surface of the resultant structure. A trench line is formed by sequentially patterning the upper capping layer and the upper insulating layer for exposing the upper portion of the via hole.
Abstract:
PURPOSE: A method for forming a semiconductor device having low permittivity interlayer dielectric is provided to exactly form a micro pattern on a SiOC layer and to restrain a parasitic capacitance between interconnections or contact plugs by using the SiOC layer having a low dielectric constant. CONSTITUTION: A low permittivity carbon oxide silicon layer made of SiOC is formed on a substrate(100) by a CVD(Chemical Vapour Deposition) using a nitrogen included gas as a source gas or a carrier gas. A plasma processing is performed on the carbon oxide silicon layer by supplying gases, such as a helium, a hydrogen, an N2O, or an Ar gas to a processing chamber. A photoresist is deposited and patterned on the plasma processed carbon oxide silicon layer(111).
Abstract:
PURPOSE: A Bluetooth system server providing network service to Bluetooth equipment and a method for providing network service using the same are provided to realize automatic authentication in several places with one registration. CONSTITUTION: A connecting part is connected with a plurality of Bluetooth access points(110). An access point control unit confirms and controls states of the plurality of Bluetooth access points(110). A user information database includes information related to Bluetooth users. A registration authenticating unit receives chip numbers of Bluetooth equipment(100) through the access points(110) for registering the Bluetooth equipment(100) at the user information database and authenticates the registered Bluetooth equipment(100) requesting authentication. A service providing unit provides a network service to the authenticated Bluetooth equipment(100) through the access points(110).
Abstract:
PURPOSE: A system and a method for an integrated mileage service are provided to collectively use dispersed mileage, and to make a mileage provider and an advertiser maximize the effect of a sale promotion activity. CONSTITUTION: The system includes a cellular phone(400) of a customer, the mileage provider(410), a cooperated shop(420), the advertiser(430) and an integrated mileage manager(440). The cellular phone(400) is equipped with a combi-chip having a wireless payment function and uses the integrated mileage for payment by downloading and storing the mileage in the combi-chip. The mileage provider provides the mileage whenever a subscriber of the cellular phone(400) buys an article or a service. The integrated mileage manager(440) receives the mileage obtained from the mileage provider(440) or the cooperated shop(420) from each customer. Each mileage is converted into the integrated mileage. The integrated mileage manager transmits the integrated mileage to the cellular phone(400).
Abstract:
PURPOSE: A quick service system using a two-way pager network and a quick service method adapted to the same are provided to make an enterprise quick service possible by expanding a service based on a local area using a PDA having a two-way pager module mounted therein. CONSTITUTION: A deliveryman waits in an office or on a road and informs the current position of the road to the office using a two-way PDA(S202). An order receiving system of the office records and manages a list of all delivery men(S204). A commodity transmitting client searches an adjacent delivery service company and orders a commodity delivery through a telephone(S206). The order receiving system automatically searches an adjacent deliveryman in the delivery men list(S208). The order receiving system instructs the selected deliveryman to deliver the commodity using a two-way PDA and informs order information supplied by the client(S210). The deliveryman receives the order details using a two-way PDA and checks contents thereof(S212). The deliveryman informs a dispatch to the office using the two-way PDA, checks a position of the transmitting client using the two-way PDA, and visits the client(S214). The deliveryman receives a commodity form the transmitting client(S216). The deliveryman checks a position of a receiving client using the two-way PDA, and visits the receiving client(S218). If the commodity is delivered completely, the deliveryman informs one's position using the two-way PDA(S220).
Abstract:
PURPOSE: A method and a system for providing an electronic coupon are provided to make a customer and a member shop conveniently and effectively use the electronic coupon at selling, and to obtain marketing data by collecting use particulars of the electronic coupon. CONSTITUTION: An electronic coupon reader(2) includes a communication interface(21) for the communication with an electronic coupon publication server(1) transmitting the electronic coupon to a mobile communication terminal(3) of the customer, an RF(Radio Frequency) module(20) for the non-contact RF communication with the terminal(3), and a processor(22) transmitting an electronic coupon ID received from the terminal(3) to the server(1), requesting an approval and receiving a response from the server(1). The RF module(20) includes an RF block(203) transmitting/receiving a non-contact RF signal from the terminal(3) and a logic block(202) extracting the electronic coupon ID from the RF signal and transmitting the RF signal to the processor(22). The electronic coupon reader(1) includes a display, and the processor(22) displays the response for an approval request from the server(1).
Abstract:
본 발명은 배선의 기생 용량을 줄일 수 있는 반도체 장치 및 그 형성방법에 관한 것으로, 그 형성방법은 기판에 무기 실리콘 산화막과 저유전율 유기 실리콘 산화막을 차례로 적층하는 단계, 패터닝 과정을 통해 상기 유기 실리콘 산화막에 상기 유기 실리콘 산화막 두께의 일부를 깊이로 하는 부분 트렌치를 형성하는 단계, 상기 부분 트렌치 내벽면에 대한 산소 처리를 하는 단계, 상기 부분 트렌치에 대한 불산 습식 식각을 실시하여 트렌치를 완성하는 단계를 구비하여 이루어진다.
Abstract:
PURPOSE: A gate spacer structure and a method for forming the same are provided to prevent bridge between a gate pattern and a bit line by entirely covering a gate electrode using silicon nitride as a spacer. CONSTITUTION: A gate pattern(200) sequentially stacked on a gate oxide pattern(110), a gate electrode(120) and a capping insulator pattern(130) is formed on a semiconductor substrate(100). An oxide spacer(141) is formed at both sidewalls of the gate electrode(120) and the gate oxide pattern(110). Also, a gate spacer(161) is formed at both sidewalls of the oxide spacer(141) and the capping insulator pattern(130). Thereby, the capping insulator pattern(130) is directly connected to the gate spacer(161). Therefore, the gate electrode(120) and the gate oxide pattern(110) are entirely covered by the capping insulator pattern(130) and the gate spacer(161). The capping insulator pattern(130) and the gate spacer(161) are made of silicon nitride.
Abstract:
안정된 콘택 저항을 가지는 반도체 장치의 금속배선 형성방법에 대해 개시한다. 콘택홀이 구비된 층간절연층이 형성된 반도체기판을 준비한다. 상기 반도체 기판의 상부에 티타늄 및 티타늄나이트라이드층을 순차적으로 적층한다. 상기 결과물을 수소 및 암모니아 분위기하에서 어닐링한다.