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公开(公告)号：KR1020040026264A
公开(公告)日：2004-03-31
申请号：KR1020020057644
申请日：2002-09-23
Applicant: 삼성전자주식회사
Inventor： 김정우
IPC: G11B19/02
Abstract: PURPOSE: A system and a method for controlling volume of a music file are provided to automatically control a volume level of the music file constantly when a plurality of music files are continuously played. CONSTITUTION: A volume information detector(201) detects the volume information added to an area of the compressed music file if playback of the compressed music file is requested. A decoder(201) decodes the compressed music file in order to recover the compressed music file to an original state. A volume controller(203) controls the volume of an audio signal output from the decoder based on the detected volume information. If the compressed music files is a plural number, the volume information detector detects the volume information of each compressed music file.
Abstract translation: 目的：提供一种用于控制音乐文件音量的系统和方法，用于当连续播放多个音乐文件时，不断地自动控制音乐文件的音量。 构成：如果请求了压缩音乐文件的回放，则音量信息检测器（201）检测添加到压缩音乐文件区域的音量信息。 解码器（201）对压缩的音乐文件进行解码，以将压缩的音乐文件恢复到原始状态。 音量控制器（203）基于检测到的音量信息来控制从解码器输出的音频信号的音量。 如果压缩音乐文件是复数，则音量信息检测器检测每个压缩音乐文件的音量信息。
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42.发明公开양자 도트를 이용한 비휘발성 단일 전자 트랜지스터 메모리와 그 제조방법 및 양자 도트를 이용한 단일 전자 트랜지스터와 그 제조방법 失效非挥发性单电子晶体管存储器使用量子点及其方法，以及使用量子点的单电子晶体管及其方法
公开(公告)号：KR1020000055239A
公开(公告)日：2000-09-05
申请号：KR1019990003754
申请日：1999-02-04
Applicant: 삼성전자주식회사
IPC: H01L27/115 , B82Y10/00
Abstract: PURPOSE: A non volatile single electron transistor memory is provided to secure a repeatability and a uniformity of an island by using a quantum dot for precisely controlling the size of the island to a unit of nanometer. CONSTITUTION: A non volatile single electron transistor memory comprises a silicon substrate(100), quantum dots(110) of a predetermined size, a source(120) and a drain(130), and a side gate. A SiO2 oxidation layer(100b) is formed on the silicon substrate. The quantum dots of a predetermined size are separated a predetermined interval from each other on the SiO2 oxidation layer. The source and drain are formed by evaporating a metal on the SiO2 oxidation layer including the quantum dots, having a predetermined number of the quantum dots used as an island, between the source and the drain. The side gate is formed on the SiO2 oxidation layer at a side surface of the source and drain, having a predetermined interval from the source and drain.
Abstract translation: 目的：提供非挥发性单电子晶体管存储器，以通过使用用于将岛的尺寸精确地控制到纳米单位的量子点来确保岛的重复性和均匀性。 构成：非易失性单电子晶体管存储器包括硅衬底（100），预定尺寸的量子点（110），源极（120）和漏极（130）以及侧栅极。 在硅衬底上形成SiO 2氧化层（100b）。 预定尺寸的量子点在SiO 2氧化层上彼此隔开预定的间隔。 源极和漏极通过在源极和漏极之间蒸发包括量子点的SiO 2氧化层上的金属形成，该量子点具有预定数量的用作岛的量子点。 在源极和漏极的侧表面上的SiO 2氧化层上形成侧栅，源极和漏极具有预定的间隔。
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Patent Agency Ranking
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公开(公告)号：KR102237820B1
公开(公告)日：2021-04-08
申请号：KR1020140057952
申请日：2014-05-14
Applicant: 삼성전자주식회사
IPC: H01L27/146
Abstract: 개시된수평형포토다이오드는기판; 상기기판상에형성된절연마스크층; 상기절연마스크층의일면에접촉하며, 상기일면과나란한방향을따라순차배치된제1형반도체층, 활성층, 제2형반도체층;을포함한다. 상기절연마스크층은관통홀이구비되어, 상기제1형반도체층, 활성층, 제2형반도체층이상기관통홀로부터측면과성장법에의해형성된다.
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公开(公告)号：KR101874803B1
公开(公告)日：2018-08-03
申请号：KR1020120006914
申请日：2012-01-20
Applicant: 삼성전자주식회사
CPC classification number: H01L23/498 , H01L23/3128 , H01L23/49816 , H01L24/73 , H01L25/105 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2225/1023 , H01L2225/1058 , H01L2924/15311 , H01L2924/15321 , H01L2924/1815 , H01L2924/18161 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
Abstract: 패키지온 패키지구조체는제1 패키지, 상기제1 패키지상에형성된제2 패키지및 상기제1 및제2 패키지사이에위치하며상기제1 패키지와상기제2 패키지를접착시키는접착재를포함하되, 상기제1 패키지는, 서로마주보는제1 면및 제2 면을갖고상기제1 면상에형성된랜드패드를포함하는제1 기판, 상기제1 면상에형성된제1 반도체칩 및상기제1 면및 상기제1 반도체칩을밀봉하되, 상기제1 반도체칩으로부터이격되어형성되고상기랜드패드를노출시키는관통비아및 상기제1 반도체칩과상기관통비아사이에형성된트렌치를포함하는제1 봉지재를포함하고, 상기트렌치의적어도일부는상기접착재로채워진다.
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