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公开(公告)号：KR102237820B1
公开(公告)日：2021-04-08
申请号：KR1020140057952A
申请日：2014-05-14
Applicant: 삼성전자주식회사
IPC: H01L27/146
Abstract: 개시된 수평형 포토 다이오드는 기판; 상기 기판 상에 형성된 절연 마스크층; 상기 절연 마스크층의 일면에 접촉하며, 상기 일면과 나란한 방향을 따라 순차 배치된 제1형 반도체층, 활성층, 제2형 반도체층;을 포함한다. 상기 절연 마스크층은 관통홀이 구비되어, 상기 제1형 반도체층, 활성층, 제2형 반도체층이 상기 관통홀로부터 측면 과성장법에 의해 형성된다.
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公开(公告)号：KR101854187B1
公开(公告)日：2018-05-08
申请号：KR1020110075213
申请日：2011-07-28
Applicant: 삼성전자주식회사
CPC classification number: G06F3/0412 , G06F3/042
Abstract: 광센싱화소내의광센서트랜지스터가빛을감지할수 있는산화물반도체트랜지스터로이루어지는광센싱장치, 상기광센싱장치의구동방법, 및상기광센싱장치를포함하는광터치스크린장치를개시한다. 개시된광센싱장치는다수의행과다수의열을따라배열된다수의광센싱화소들을구비하는광센싱화소어레이를포함한다. 각각의광센싱화소는서로직렬로연결된광센서트랜지스터와스위치트랜지스터를포함한다. 광센싱화소어레이내의각각의행에는스위치트랜지스터의게이트에연결되는게이트라인이마련되어있다. 어느한 행을따라배열된광센서트랜지스터의게이트에는해당행에후속하는행에마련된게이트라인연결된다.
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公开(公告)号：KR1020170141638A
公开(公告)日：2017-12-26
申请号：KR1020170172314
申请日：2017-12-14
Applicant: 삼성전자주식회사
IPC: G06F3/042 , H01L27/146 , H01L31/113 , G06F3/041 , H01L29/786
CPC classification number: G06F3/042 , G06F3/0412 , G06F3/0421 , H01L27/14616 , H01L29/7869 , H01L31/1136
Abstract: 광센싱화소내의광센서트랜지스터가빛을감지할수 있는산화물반도체트랜지스터로이루어지는광센싱장치, 상기광센싱장치의구동방법, 및상기광센싱장치를포함하는광터치스크린장치를개시한다. 개시된광센싱장치의하나의광센싱회로는단순하게하나의산화물반도체트랜지스터만을포함할수 있다. 이러한광센싱장치에서, 산화물반도체트랜지스터는광센싱소자로서역할을할 뿐만아니라, 광센싱신호를출력하기위한구동회로의역할도함께수행할수 있다. 따라서, 개시된광센싱장치는하나의화소내에다수의트랜지스터를포함하는복잡한회로구조를가질필요가없다.
Abstract translation: 光学感测晶体管是氧化物半导体晶体管，其能够检测所述照明装置中，在像素的光感测设备的驱动方法的构成的光传感器感测的光，并且公开了一种包括所述光感测装置的光学触摸屏设备。 所公开的光感测装置的一个光感测电路可以仅包括一个氧化物半导体晶体管。 在这种光感测装置中，氧化物半导体晶体管不仅用作光学感测装置，而且还可用作用于输出光感测信号的驱动电路。 因此，所公开的光感测装置不需要具有在一个像素中包括多个晶体管的复杂电路结构。
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公开(公告)号：KR101810608B1
公开(公告)日：2017-12-21
申请号：KR1020110060797
申请日：2011-06-22
Applicant: 삼성전자주식회사
CPC classification number: H01L27/14609 , G06F3/042 , G06F2203/04103
Abstract: 광센싱화소내의광센서트랜지스터와스위치트랜지스터가산화물반도체트랜지스터로이루어지는광센싱장치및 상기광센싱장치의동작신뢰성을향상시킬수 있는구동방법, 그리고상기광센싱장치를포함하는광터치스크린장치가개시된다. 개시된광센싱장치에따르면, 광센싱화소내의광센서트랜지스터와스위치트랜지스터는하나의기판위에서인접하여형성되며, 스위치트랜지스터는상대적으로광에민감하지않고안정적인채널재료를포함하며, 광센서트랜지스터는상대적으로광에민감한채널재료를포함한다. 광센서트랜지스터는또한채널의상부에투명한상부전극을가지며, 상부전극에는음의전압이인가되어문턱전압의음 방향시프트를방지할수 있다.
Abstract translation: 光传感器晶体管的光学触摸屏设备和所述光感测像素，包括所述光感测装置和从而可以提高操作可靠性的驱动方法，和氧化物半导体晶体管构成的光感测装置的光感测设备的开关晶体管进行说明。 根据所公开的光学感测装置，光学感测像素中的光电传感器晶体管和开关晶体管在一个衬底上彼此相邻地形成，开关晶体管相对不敏感并且包括稳定的沟道材料， 并包括一个光敏通道材料。 光电传感器晶体管在沟道顶部也具有透明的顶部电极，并且向顶部电极施加负电压以防止阈值电压的负偏移。
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公开(公告)号：KR1020150047005A
公开(公告)日：2015-05-04
申请号：KR1020130126702
申请日：2013-10-23
Applicant: 삼성전자주식회사
CPC classification number: H04N5/3745 , H01L27/14612 , H01L27/14643 , H04N5/378
Abstract: 포토다이오드를앰플리파이어(amplifier)를구현하는 MOS 회로와함께동일한기판위에집적시키는경우에발생할수 있는문턱전압변화에따른 MOS의특성열화를보상하는이미지센서및 이미지센서를구동하는방법을개시한다.
Abstract translation: 本发明涉及一种图像传感器，其在将MOS二极管与实现放大器的MOS电路集成在同一基板上的情况下，从阈值电压的变化来补偿MOS的施法者效应及其方法。 本发明包括：光电转换器，其在每个像素处产生光电转换的电荷; 放大器部分，其从在每个像素处产生的电荷放大电流; 施加补偿电压的补偿部分，其补偿构成放大器部分的多个晶体管中的至少一个上的阈值电压。
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Patent Agency Ranking
公开(公告)号：KR1020140060172A
公开(公告)日：2014-05-19
申请号：KR1020120126943
申请日：2012-11-09
Applicant: 삼성전자주식회사
CPC classification number: F21V23/009 , G06F3/03545
Abstract: Disclosed is a color light pen for an electronic panel. The disclosed color light pen for an electronic panel comprises a tip part and a pen body part; a pressure sensor which is disposed on the tip part and detects the contact between a display part of a terminal device and the tip part; a light source which is disposed on the pen body part and outputs light to the outside through the tip part according to a detection signal of the pressure sensor; a color selection switch which is exposed on the pen body part to enable a user to select color to be used when the user writes or draws on the display part of the terminal device; and a driver part which drives the light source to vary a frequency or pattern of the light to be outputted from the light source according to the color selected by the user.
Abstract translation: 公开了一种用于电子面板的彩色笔。 所公开的用于电子面板的彩色笔包括尖端部分和笔体部分; 压力传感器，设置在前端部上，检测端子装置的显示部与前端部之间的接触; 光源，其设置在笔体部分上，并根据压力传感器的检测信号通过顶端部向外部输出光; 一种颜色选择开关，其被暴露在笔体部分上，以使用户能够在用户在终端设备的显示部分上写入或绘制时选择要使用的颜色; 以及驱动器部件，其驱动光源以根据用户选择的颜色来改变要从光源输出的光的频率或图案。
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公开(公告)号：KR1020140013622A
公开(公告)日：2014-02-05
申请号：KR1020120081438
申请日：2012-07-25
Applicant: 삼성전자주식회사
CPC classification number: G06F3/044 , G06F3/0412 , G06F3/0416
Abstract: A touch panel according to an embodiment of the present invention comprises: a display unit for driving the liquid crystal with the voltage difference between a first electrode and a second electrode, generating image voltage to be displayed in response to the activation of a display gate line, and applying the image voltage to the first electrode; and a sensing unit for detecting whether or not of the finger capacitance occurs according to a physical touch on the touch panel, through a change in the voltage of the second electrode, in response to the activation of the sensor gate line.
Abstract translation: 根据本发明的实施例的触摸面板包括：用于以第一电极和第二电极之间的电压差驱动液晶的显示单元，产生响应于显示栅极线的激活而显示的图像电压 并且将图像电压施加到第一电极; 以及感测单元，用于响应于传感器栅极线的激活，通过根据第二电极的电压的变化来检测根据触摸面板上的物理触摸是否发生手指电容。
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公开(公告)号：KR1020130037072A
公开(公告)日：2013-04-15
申请号：KR1020110101411
申请日：2011-10-05
Applicant: 삼성전자주식회사
CPC classification number: G06F3/042 , G06F3/0412
Abstract: PURPOSE: An optical touch screen and a manufacturing method thereof are provided to simplify a manufacturing process and to reduce manufacturing costs as an optical sensor transistor, a switch transistor, and an operating transistor have the same structure. CONSTITUTION: A display pixel displays an image and an optical sensing pixel senses incident light. The display pixel includes a display cell and an operating transistor(20) for controlling the on-off of the display cell. The optical sensing pixel includes an optical sensor transistor sensing the incident light and a switch transistor(22) outputting data from the optical sensor transistor. The operating transistor and the switch transistor have a dual gate structure placing a bottom gate and a top gate while placing a channel layer on a gap. The optical sensor transistor has a single gate structure having one gate.
Abstract translation: 目的：提供一种光学触摸屏及其制造方法，以简化制造工艺并降低制造成本，因为光学传感器晶体管，开关晶体管和操作晶体管具有相同的结构。 构成：显示像素显示图像，光学感测像素感测入射光。 显示像素包括显示单元和用于控制显示单元的开 - 关的操作晶体管（20）。 光学感测像素包括感测入射光的光学传感器晶体管和从光学传感器晶体管输出数据的开关晶体管（22）。 工作晶体管和开关晶体管具有双栅极结构，其将沟道层放置在间隙上，同时放置底栅极和顶栅极。 光传感器晶体管具有一个具有一个栅极的栅极结构。
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公开(公告)号：KR1020130004836A
公开(公告)日：2013-01-14
申请号：KR1020110066130
申请日：2011-07-04
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136 , H01L21/336
CPC classification number: H01L27/14692 , H01L27/14612 , H01L29/7869 , H01L27/1225 , H01L29/78696
Abstract: PURPOSE: A transistor, an electronic device including the transistor and a manufacturing method thereof are provided to use an active layer having multiple oxide semiconductor layers and to implement a photo sensing device having an excellent optical detection characteristic. CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). An active layer(A1) includes a first oxide semiconductor layer(10), a second oxide semiconductor layer(30) and an insulating layer(20). A source electrode(S1) and a drain electrode(D1) are connected to both ends of the active layer. A gate insulating layer(GI1) is formed between the active layer and a gate. A passivation layer(P1) covers the active layer, the source electrode and the drain electrode.
Abstract translation: 目的：提供晶体管，包括晶体管的电子器件及其制造方法，以使用具有多个氧化物半导体层的有源层并实现具有优异光学检测特性的光感测器件。 构成：在基板（SUB1）上形成栅极（G1）。 有源层（A1）包括第一氧化物半导体层（10），第二氧化物半导体层（30）和绝缘层（20）。 源电极（S1）和漏电极（D1）连接到有源层的两端。 在有源层和栅极之间形成栅极绝缘层（GI1）。 钝化层（P1）覆盖有源层，源电极和漏电极。
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公开(公告)号：KR1020110072921A
公开(公告)日：2011-06-29
申请号：KR1020090130035
申请日：2009-12-23
Applicant: 삼성전자주식회사
IPC: H01L27/105 , H01L27/108 , G11C11/22
CPC classification number: G11C11/22 , H01L29/8615
Abstract: PURPOSE: A memory device and a method for operating the memory device are provided to obtain memory device with the high capacitance by maintaining a memory function and a switching function regardless of the size change of memory cells. CONSTITUTION: A first memory cell(MC1) includes a p-type ferroelectric layer(10) and an n-type oxide semiconductor layer(20). The p-type ferroelectric layer is bonded with the n-type oxide semiconductor layer. A depletion region is arranged in the bonding part of the p-type ferroelectric layer and the n-type oxide semiconductor layer. The depletion region secures the switching characteristic of the first memory cell. A first electrode is in connection with the p-type ferroelectric layer. A second electrode is in connection with the n-type oxide semiconductor layer. The p-type ferroelectric layer includes oxides. The n-type oxide semiconductor layer includes binary oxides.
Abstract translation: 目的：提供一种用于操作存储器件的存储器件和方法，以通过保持存储器功能和开关功能来获得具有高电容的存储器件，而不管存储器单元的尺寸变化。 构成：第一存储单元（MC1）包括p型铁电层（10）和n型氧化物半导体层（20）。 p型铁电体层与n型氧化物半导体层接合。 在p型铁电体层和n型氧化物半导体层的结合部分设置有耗尽区域。 耗尽区确保第一存储单元的切换特性。 第一电极与p型铁电体层连接。 第二电极与n型氧化物半导体层连接。 p型铁电层包括氧化物。 n型氧化物半导体层包括二元氧化物。
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