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公开(公告)号：KR1020110135752A
公开(公告)日：2011-12-19
申请号：KR1020100055662
申请日：2010-06-11
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/0045 , G03F7/004 , G03F7/0046 , G03F7/0047 , G03F7/029
Abstract: PURPOSE: A photo-resist composition for manufacturing a probe array and a method for manufacturing the probe array using the same are provided to include an onium salt-containing photoacid generating agent and a photo-sensitive agent reactive to i-line light. CONSTITUTION: A photo-resist composition for manufacturing a probe array includes an onium salt-containing photoacid generating agent and a photo-sensitive agent reactive to i-line light. The onium salt includes sulfonate cation part represented by chemical formula 1 and sulfonate anion part represented by chemical formula 2. In the chemical formula 1, the A, the B, and the C are respectively hydroxyl group, cyclo group, and cycloalkyl group. In the chemical formula 2, the n is between 1 and 3. The X includes C3 to C10 cyclogroup, adamantyl group, and oxygen containing cycloheptane group.
Abstract translation: 目的：提供用于制造探针阵列的光致抗蚀剂组合物和使用其的制造探针阵列的方法，以包括含鎓盐的光酸产生剂和对i线光无反应的光敏剂。 构成：用于制造探针阵列的光致抗蚀剂组合物包括含鎓盐的光酸产生剂和与i线光反应的光敏剂。 鎓盐包括由化学式1表示的磺酸盐阳离子部分和由化学式2表示的磺酸根阴离子部分。在化学式1中，A，B和C分别是羟基，环基和环烷基。 在化学式2中，n在1和3之间.X包括C 3至C 10环基，金刚烷基和含氧环庚烷基。
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公开(公告)号：KR1020110111720A
公开(公告)日：2011-10-12
申请号：KR1020100030945
申请日：2010-04-05
Applicant: 삼성전자주식회사
IPC: G01N33/48
CPC classification number: G03F7/165 , G01N33/487 , G03F7/0392 , G03F7/095 , G03F7/405
Abstract: 프로브 어레이의 제조 방법이 제공된다. 프로브 어레이의 제조 방법은, 표면에 아세탈기를 포함하고 하기 화학식 1로 표시되는 산분해성 보호기에 의해 보호되고, 프로브의 제1 모노머와 커플링할 수 있는 작용기를 가지는 기판을 제공하고, 광산발생제를 포함하는 포토레지스트를 기판 상에 제공하고, 포토레지스트를 선택적으로 노광하여 노광된 영역에 대응하는 산분해성 보호기를 탈보호하고, 포토레지스트를 제거하고, 산분해성 보호기와 결합된 제1 모노머를 탈보호된 작용기와 커플링하는 것을 포함한다.
(단, 상기 R1은 탄소수가 1 내지 5인 알킬기이고, 상기 R2는 수소, 또는 메틸기이고, Y는 모노머 또는 기판과 커플링되는 사이트이다.)-
Patent Agency Ranking
公开(公告)号：KR1020110094878A
公开(公告)日：2011-08-24
申请号：KR1020100014590
申请日：2010-02-18
Applicant: 삼성전자주식회사 , 금호석유화학 주식회사
IPC: C08G63/127 , C08G61/02 , C12Q1/68
CPC classification number: C40B50/14 , B01J19/0046 , B01J2219/00529 , B01J2219/00585 , B01J2219/00596 , B01J2219/00608 , B01J2219/00612 , B01J2219/00637 , B01J2219/00659 , B01J2219/00709 , B01J2219/00711 , B01J2219/00722 , B82Y30/00 , C08G63/127 , C08G61/02 , C12Q1/6834
Abstract: PURPOSE: A composition of forming an oligomer array is provided to ensure high sensitivity to the light and to form an oligomer array including bio molecules or analogs thereof at the predetermined location of a substrate without the damage of oligomers. CONSTITUTION: A composition of forming an oligomer array comprises: a polymer which includes a repeating unit represented by chemical formulas (1) and (2) and is stable to acids; a photoacid generator; and an organic solvent. In chemical formulas, R1 is stable to acids and represents hydrogen, C1-20 alkyl group, C3-20 cycloalkyl, C2-20 alkoxy alkyl, or C5-20 alkoxy cycloalkyl group; R2 is stable to acids and represents hydrogen, C1-20 alkyl group or C2-20 alkoxy alkyl group; and R3 is stable to acids and represents C3-20 cycloalkyl group or C3-20 lactone group.
Abstract translation: 目的：提供形成低聚物阵列的组合物以确保对光的高灵敏度，并且在基材的预定位置形成包含生物分子或其类似物的低聚物阵列，而不损害低聚物。 构成：形成低聚物阵列的组合物包括：包含由化学式（1）和（2）表示的重复单元并且对酸稳定的聚合物; 光致酸发生器; 和有机溶剂。 在化学式中，R1对酸稳定，代表氢，C1-20烷基，C3-20环烷基，C2-20烷氧基烷基或C5-20烷氧基环烷基; R2对酸稳定，代表氢，C1-20烷基或C2-20烷氧基烷基; R3对酸稳定，代表C3-20环烷基或C3-20内酯基。
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公开(公告)号：KR100886221B1
公开(公告)日：2009-02-27
申请号：KR1020070059548
申请日：2007-06-18
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/2022 , G03F7/11 , G03F7/38 , G03F7/40
Abstract: 포토레지스트 패턴 보호막 형성방법 및 이것을 이용한 미세패턴 형성방법을 제공한다. 기판 상에 포토레지스트 막을 형성한다. 노광 공정을 이용하여 상기 포토레지스트 막에 노광영역들 및 비 노광영역들을 한정한다. 상기 노광영역들을 갖는 상기 포토레지스트 막 상에 반응물질 층을 형성한다. 화학결합공정(chemical attachment process)을 이용하여 상기 반응물질 층을 반응시키어 상기 노광영역들 상에 보호막을 형성한다. 상기 비 노광영역들 및 반응하고 남은 상기 반응물질 층을 현상공정을 이용하여 제거하여 포토레지스트 패턴들을 형성한다. 상기 보호막 및 상기 포토레지스트 패턴들을 식각마스크로 사용하여 상기 기판을 식각한다.
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公开(公告)号：KR1020080032456A
公开(公告)日：2008-04-15
申请号：KR1020060098314
申请日：2006-10-10
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0397 , G03F7/0045
Abstract: An ArF photoresist composition is provided to improve adhesion of a photoresist layer with an underlayer, and solubility in a developer solution. An ArF photoresist composition includes 10-15wt% of methacrylate or acrylate resin comprising a methacrylate or acrylate monomer into which an adamantyl group having at least three alkoxy groups at the terminal is introduced; 1.0-1.5wt% of a photoacid generator which reacts with a light to produce an acid; and an excess of solvent. A method for forming a photoresist pattern includes the steps of: preparing the ArF photoresist composition; applying the photoresist composition to an object to form a photoresist layer; exposing the photoresist layer to an ArF laser beam; and developing the exposed photoresist film to form a photoresist pattern.
Abstract translation: 提供ArF光致抗蚀剂组合物以改善光致抗蚀剂层与底层的粘附性和在显影剂溶液中的溶解度。 ArF光致抗蚀剂组合物包括10-15重量％的包含甲基丙烯酸酯或丙烯酸酯单体的甲基丙烯酸酯或丙烯酸酯树脂，其中引入末端具有至少三个烷氧基的金刚烷基; 1.0-1.5重量％的与光反应产生酸的光酸产生剂; 和过量的溶剂。 形成光致抗蚀剂图案的方法包括以下步骤：制备ArF光致抗蚀剂组合物; 将光致抗蚀剂组合物施加到物体上以形成光致抗蚀剂层; 将光致抗蚀剂层暴露于ArF激光束; 并显影曝光的光致抗蚀剂膜以形成光致抗蚀剂图案。
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公开(公告)号：KR100761761B1
公开(公告)日：2007-10-04
申请号：KR1020060088826
申请日：2006-09-14
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/0392 , C08B37/0012 , C08B37/0015 , C08L5/16 , G03F7/0395 , G03F7/0045 , G03F7/0048
Abstract: A molecular resin for photoresist, a photoresist composition containing the molecular resin, and a method for forming a pattern by using the composition are provided to enhance etching resistance and profile quality of a photoresist pattern and to minimize the loss of pattern. A molecular resin comprises a host-guest inclusion complex which comprises a beta-cyclodextrin derivative as a host molecule and an adamantyl group as a guest molecule. Preferably the host-guest inclusion complex is represented by the formula 1, wherein X is a carboxyl group, or a C1-C4 alkyl group. The photoresist composition comprises 7-14 wt% of the molecular resin; 0.1-0.5 wt% of a photoacid generator; and the balance of an organic solvent.
Abstract translation: 提供用于光致抗蚀剂的分子树脂，含有分子树脂的光致抗蚀剂组合物，以及通过使用该组合物形成图案的方法，以提高光致抗蚀剂图案的耐蚀刻性和轮廓质量，并使图案的损失最小化。 分子树脂包括主体 - 客体包合络合物，其包含作为宿主分子的β-环糊精衍生物和作为客体分子的金刚烷基。 优选主体 - 客体包合络合物由式1表示，其中X是羧基或C 1 -C 4烷基。 光致抗蚀剂组合物包含7-14重量％的分子树脂; 0.1-0.5重量％的光酸产生剂; 和有机溶剂的平衡。
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公开(公告)号：KR100761759B1
公开(公告)日：2007-10-04
申请号：KR1020060088827
申请日：2006-09-14
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: C07H3/00 , G03F7/0392 , G03F7/0395 , Y10S430/112 , G03F7/0045
Abstract: A molecular resin for photoresist, a photoresist composition containing the molecular resin, and a method for forming a pattern by using the composition are provided to improve etching resistance of a photoresist pattern and uniformity of pattern profile. A molecular resin comprises a beta-cyclodextrin derivative having the structure of beta-cyclodextrin combined with a t-butoxycarbonate group. Preferably the beta-cyclodextrin derivative is represented by the formula 1. The photoresist composition comprises 7-14 wt% of the molecular resin; 0.1-0.5 wt% of a photoacid generator; and the balance of an organic solvent.
Abstract translation: 提供光致抗蚀剂用分子树脂，含有分子树脂的光致抗蚀剂组合物，以及通过使用该组合物形成图案的方法，以提高光致抗蚀剂图案的耐蚀刻性和图案轮廓的均匀性。 分子树脂包括具有β-环糊精结构与β-丁氧基碳酸酯基团结合的β-环糊精衍生物。 优选地，β-环糊精衍生物由式1表示。光致抗蚀剂组合物包含7-14重量％的分子树脂; 0.1-0.5重量％的光酸产生剂; 和有机溶剂的平衡。
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