Abstract:
PURPOSE: A composition for forming a photosensitive type anti-reflective coating, a pattern forming method using the same, and a semiconductor device manufacturing method using the same are provided to form superior trench patterns based on little amount of exposed light. CONSTITUTION: A composition for forming a photosensitive type anti-reflective coating includes a photoacid generator containing onium salt and a photo-resist agent reacting with i-line light. The onium salt includes sulfonate. The sulfonate includes a sulfonate cation part represented by chemical formula 1 and a sulfonate anion part represented by chemical formula 2. In the chemical formula 1, the A, the B, and the C includes C1 to C20 alkyl group, C2 to C20 alkoxy group, C4 to C20 aryl group, C3 to C20 cyclo alkyl group, or C5 to C20 alkoxycyclo alkyl group. In the chemical formula 2, the n is 1 to 3. The X includes C4 to C10 cyclic group, alkyl group, cycloalkyl group, and other groups.
Abstract:
PURPOSE: A photo-resist composition for manufacturing a probe array and a method for manufacturing the probe array using the same are provided to include an onium salt-containing photoacid generating agent and a photo-sensitive agent reactive to i-line light. CONSTITUTION: A photo-resist composition for manufacturing a probe array includes an onium salt-containing photoacid generating agent and a photo-sensitive agent reactive to i-line light. The onium salt includes sulfonate cation part represented by chemical formula 1 and sulfonate anion part represented by chemical formula 2. In the chemical formula 1, the A, the B, and the C are respectively hydroxyl group, cyclo group, and cycloalkyl group. In the chemical formula 2, the n is between 1 and 3. The X includes C3 to C10 cyclogroup, adamantyl group, and oxygen containing cycloheptane group.
Abstract:
프로브 어레이의 제조 방법이 제공된다. 프로브 어레이의 제조 방법은, 표면에 아세탈기를 포함하고 하기 화학식 1로 표시되는 산분해성 보호기에 의해 보호되고, 프로브의 제1 모노머와 커플링할 수 있는 작용기를 가지는 기판을 제공하고, 광산발생제를 포함하는 포토레지스트를 기판 상에 제공하고, 포토레지스트를 선택적으로 노광하여 노광된 영역에 대응하는 산분해성 보호기를 탈보호하고, 포토레지스트를 제거하고, 산분해성 보호기와 결합된 제1 모노머를 탈보호된 작용기와 커플링하는 것을 포함한다.
(단, 상기 R1은 탄소수가 1 내지 5인 알킬기이고, 상기 R2는 수소, 또는 메틸기이고, Y는 모노머 또는 기판과 커플링되는 사이트이다.)
Abstract:
PURPOSE: A composition of forming an oligomer array is provided to ensure high sensitivity to the light and to form an oligomer array including bio molecules or analogs thereof at the predetermined location of a substrate without the damage of oligomers. CONSTITUTION: A composition of forming an oligomer array comprises: a polymer which includes a repeating unit represented by chemical formulas (1) and (2) and is stable to acids; a photoacid generator; and an organic solvent. In chemical formulas, R1 is stable to acids and represents hydrogen, C1-20 alkyl group, C3-20 cycloalkyl, C2-20 alkoxy alkyl, or C5-20 alkoxy cycloalkyl group; R2 is stable to acids and represents hydrogen, C1-20 alkyl group or C2-20 alkoxy alkyl group; and R3 is stable to acids and represents C3-20 cycloalkyl group or C3-20 lactone group.