Abstract:
본발명은정신분열병환자들의심박변이도(heart rate variability, HRV)를측정하여정신분열병을진단하는장치및 방법에관한것이다. 보다구체적으로본 발명은 HRV의여러측정지표가정신분열병환자에서특징적인변화를보이는것을제시한다. HRV의측정지표중에서도 SampEn (sample entropy)은 HRV의복잡성을나타나는지표이며, LF/HF (ration of low frequency to high frequency)는 HRV에서교감신경계와부교감신경계가서로균형을이루는정도를나타낸다. SampEn과 LF/HF 측정값을이용하여정신분열병환자를특이적으로진단할수 있으며, 정신분열병치료제의스크리닝및 효능평가에이용할수 있다.
Abstract:
PURPOSE: A low crystalline carbonate apatite coating method is provided to make the process thereof simple and to enhance reproducibility. CONSTITUTION: A low crystalline carbonate apatite coating method comprises: a step(S1) of producing a first reactant by dissolving a water soluble polymer in ion exchanged water; a step(S2) of producing a second reactant by dissolving a water-soluble calcium salt in the first reactant; a step(S3) of coating a supporter by dipping the supporter in the second reactant; and a step(S5) coating a low crystalline carbonate apatite.
Abstract:
PURPOSE: A device and method for diagnosing schizophrenia using a heart rate variability measurement factor are provided to simply verify a medicine of schizophrenia. CONSTITUTION: A device and method for diagnosing schizophrenia(100) comprises a heart rate variability measurement unit(110), a database unit(120), and a processing unit(130). The heart rate variability measurement unit measure the heart rate variability of a subject. The database unit stores a diagnostic criteria of SampEn(sample entorpy) and LF/HF(low frequency/high frequency) through a clinical trials of a schizophrenic under predetermined conditions The processing unit calculates SampEn(sample entorpy) and LF/HF(low frequency/high frequency) using the measured data from the heart rate variability measurement unit and compares it with the diagnostic criteria.
Abstract:
본 발명의 일실시예에 따른 박막 증착 장치는 내부에 기판이 장입되는 챔버; 상기 챔버 내에 반응 가스를 공급하는 가스 공급 장치; 상기 반응 가스 중 적어도 일부를 해리시켜 결정성 나노 입자를 형성하는 에너지원; 및 상기 기판 상부에 개폐 가능하게 설치되며, 상기 반응 가스 및 상기 에너지원으로부터 방출되는 열 중 적어도 하나를 기판에 대해 차단하는 기판 차단부;를 포함하며,상기 기판 차단부는 상기 기판에 박막이 증착되는 시간을 지연시키기 위하여 기판을 개폐 시키는 동작이 시간에 의존하여 행해진다.
Abstract:
PURPOSE: An apparatus for manufacturing a thin film is provided to improve the resistivity of the film in a manufacturing process and to deposit the high-grade crystalline thin film. CONSTITUTION: An apparatus for manufacturing a thin film includes a chamber (110), a reaction gas feeding unit (120), an energy source, and a substrate blocking part (160a). A substrate is inserted inside the chamber. The gas feeding unit feeds a reaction gas inside the chamber. The energy source dissociates at least the part of the reaction gas in order to form crystalline nanoparticles. The substrate blocking part at the upper side of the substrate opens or closes the substrate, and blocks heat from the reaction gas and the energy source against the substrate. The substrate blocking part opens and closes the substrate depending on time.