公开(公告)号：KR101362291B1

公开(公告)日：2014-02-13

申请号：KR1020120116531

申请日：2012-10-19

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김준현 ,  권용현

IPC: H01L35/34

CPC classification number: H01L35/14 ,  H01L35/20 ,  H01L35/22 ,  H01L35/34

Abstract: The present invention relates to a method for growing a nanoparticle superlattice thin film of a thermoelectric element by a solution process. The present invention comprises a S1 step of repeating a solution process of dropping metal source containing solution on a substrate while rotating the substrate to form a plurality of thin films and forming a metal oxide buffer layer having preferred directivity; a S2 step of thermal annealing the buffer layer to be crystalized; a S3 step of forming a metal oxide thin film layer by a solution process of dropping metal source containing solution on the buffer layer of the rotated substrate while rotating the substrate passing through the S2 step; and a S4 of thermal annealing the buffer layer formed in the S2 step and the thin film layer formed in the S3 step to be crystalized. [Reference numerals] (S1) Form a ZnO buffer layer on a substrate through spin coating; (S2) Crystalize a buffer layer; (S3) Form a thin film layer on the buffer layer through spin coating; (S4) Crystalize the buffer layer and the thin film layer

Abstract translation: 本发明涉及通过溶液法生长热电元件的纳米颗粒超晶格薄膜的方法。 本发明包括在旋转衬底同时旋转衬底以形成多个薄膜并形成具有优选方向性的金属氧化物缓冲层的情况下，重复将含金属源的溶液滴落在衬底上的溶液处理的S1步骤; 对要结晶化的缓冲层进行热退火的S2步骤; 通过在旋转通过S2步骤的基板的同时通过将旋转的基板的缓冲层上滴入含有金属源的溶液的溶液处理形成金属氧化物薄膜层的S3步骤; 以及在S2步骤中形成的缓冲层进行热退火的S4和在S3步骤中形成的薄膜层进行结晶化。 （S1）通过旋涂在基板上形成ZnO缓冲层; （S2）使缓冲层结晶化; （S3）通过旋涂在缓冲层上形成薄膜层; （S4）使缓冲层和薄膜层结晶化

公开(公告)号：KR101228649B1

公开(公告)日：2013-01-31

申请号：KR1020110059721

申请日：2011-06-20

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  서동규 ,  김준현

IPC: H01L35/34 ,  H01L35/22 ,  H01L35/02

Abstract: 본 발명은 열전소자용 자발적 초격자구조 금속산화물 박막제조방법에 관한 것이다. 본 발명에 따른 스핀코팅을 이용한 열전소자의 자발적 초격자구조 다성분계 금속산화물 박막제조방법은 기판 상에 스퍼터링을 통해 ZnO 버퍼층이 형성되는 S1 단계; 상기 버퍼층이 형성된 기판을 회전시키면서, 상기 회전되는 기판 상에 금속소스 함유 용액을 떨어뜨리는 스핀코팅(spin-coating)법으로 박막을 형성하는 S2 단계; S2 단계에서 형성된 박막이 건조되는 S3 단계; 및 S3 단계를 거친 박막을 열처리하여 초격자구조를 가진 금속산화물 박막이 형성되는 S4 단계를 포함한다.

公开(公告)号：KR1020120126245A

公开(公告)日：2012-11-21

申请号：KR1020110043895

申请日：2011-05-11

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김동찬

IPC: B82B3/00 ,  B82B1/00

CPC classification number: B82B3/0038 ,  B82Y40/00 ,  H01B13/0026

Abstract: PURPOSE: A nano-structure in which an AZP buffer layer is formed and a manufacturing method thereof are provided to vertically grow the nano-wire in a fixed thickness. CONSTITUTION: A manufacturing method of a nano-structure in which an AZO buffer layer is formed comprises the following steps: (S1) forming an AZO (Al doped ZnO) buffer layer is formed on a transparent electrode(102); (S2) growing nano-wires(300) by providing a precursor including a first metal and oxygen on the AZO buffer layer; and (S3) arranging upper electrodes on the nano-wire. The AZO buffer layer is formed by depositing ZnO and Al2O3 by turns using an ALD (Atomic Layer Deposition) method. The AZO buffer layer is formed in the thickness of 10-100 nano meters. In the step (S2), the precursor is provided at the flow rate of 5-10 micro mol/min for 20-40 minutes. The flow ratio of the precursor to oxygen in the step (S2) is 1:180-1:200. [Reference numerals] (S1) Forming an AZO buffer layer on a transparent electrode; (S2) Growing nano-wires on the AZO buffer layer; (S3) Arranging upper electrodes on the nano-wire

Abstract translation: 目的：形成AZP缓冲层的纳米结构体及其制造方法，以使固定厚度的纳米线垂直生长。 构成：其中形成AZO缓冲层的纳米结构的制造方法包括以下步骤：在透明电极（102）上形成（S1）形成AZO（Al掺杂的ZnO）缓冲层; （S2）通过在AZO缓冲层上提供包括第一金属和氧的前体来生长纳米线（300）; 和（S3）在上述纳米线上配置上部电极。 AZO缓冲层通过使用ALD（原子层沉积）方法依次沉积ZnO和Al 2 O 3而形成。 AZO缓冲层的厚度为10-100纳米。 在步骤（S2）中，以5-10微摩尔/分钟的流速提供前驱体20-40分钟。 步骤（S2）中前体与氧的流动比为1：180-1：200。 [S1]在透明电极上形成AZO缓冲层， （S2）在AZO缓冲层上生长纳米线; （S3）在纳米线上排列上电极

公开(公告)号：KR1020120108370A

公开(公告)日：2012-10-05

申请号：KR1020110026124

申请日：2011-03-24

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김동찬

IPC: G01J5/02 ,  G01J1/02 ,  G08B17/12

Abstract: PURPOSE: A transparent ultraviolet-ray sensor with a metal oxide nano structure and a fire-warning device applying the same are provided to selectively manufacture a metal oxide nano structure according to respectively desired functions by manufacturing a transparent ultraviolet-ray sensor and to recognize ultraviolet-rays of all directions. CONSTITUTION: A transparent ultraviolet-ray sensor with a metal oxide nano structure(300) comprises a transparent substrate(100), an insulating film layer(200), and an electrode. The insulating layer is formed on the transparent substrate. A metal oxide nano structure is composed of a metal oxide material on the insulating film layer. The electrode is formed in the top of the metal oxide nano structure. The transparent substrate is formed into a lower electrode. The electrode formed on the top of the metal oxide nano structure is formed into an upper electrode. [Reference numerals] (100) 400b(Lower electrode)

Abstract translation: 目的：提供一种具有金属氧化物纳米结构的透明紫外线传感器和应用其的防火警告装置，通过制造透明紫外线传感器并根据分别期望的功能选择性地制造金属氧化物纳米结构，并识别紫外线 - 所有方向的数字。 构成：具有金属氧化物纳米结构（300）的透明紫外线传感器包括透明基板（100），绝缘膜层（200）和电极。 绝缘层形成在透明基板上。 金属氧化物纳米结构由绝缘膜层上的金属氧化物材料构成。 电极形成在金属氧化物纳米结构的顶部。 透明基板形成下电极。 形成在金属氧化物纳米结构的顶部上的电极形成为上电极。 （附图标记）（100）400b（下电极）

公开(公告)号：KR1020100130296A

公开(公告)日：2010-12-13

申请号：KR1020090048891

申请日：2009-06-03

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김동찬

IPC: B82B3/00 ,  H01L21/205 ,  G09F9/00 ,  H01J1/30

CPC classification number: H01L21/02603 ,  G09F9/00 ,  H01J1/30 ,  H01L21/02554 ,  H01L21/205

Abstract: PURPOSE: A method for fabricating a zinc oxide-based nanowire is provided to obtain the vertical growth of a nanowire by forming a zinc oxide-based nanowire after a zinc oxide buffer layer is formed on a substrate. CONSTITUTION: A method for fabricating a zinc oxide-based nanowire forms a zinc oxide-based buffer layer(102) on a substrate(100) using a chemical vapor deposition(CVD) which is performed at a first temperature and forms a zinc oxide-based nanowire(104) on the zinc oxide-based buffer layer using a chemical vapor deposition(CVD) which is performed at a second temperature greater than the first temperature.

Abstract translation: 目的：提供一种制造氧化锌基纳米线的方法，以在形成氧化锌基纳米线之后，在基板上形成氧化锌缓冲层，以获得纳米线的垂直生长。 构成：使用在第一温度下进行的化学气相沉积（CVD）在基板（100）上形成氧化锌基纳米线的方法，形成氧化锌基缓冲层（102） 使用在大于第一温度的第二温度下进行的化学气相沉积（CVD）在基于氧化锌的缓冲层上的基于纳米线的纳米线（104）。

公开(公告)号：KR1020100047577A

公开(公告)日：2010-05-10

申请号：KR1020080106533

申请日：2008-10-29

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김동찬

IPC: B82B3/00 ,  B82Y25/00

Abstract: PURPOSE: An electric device and a method for manufacturing the same are provided to control the first nuclei to grow up in excessively big size and to improve field emission characteristic. CONSTITUTION: An electric device comprises: a non-single crystal layer(106a) which contains metal on the substrate(100); a seed layer(102a) of the single crystal between non-single crystal layers in the top of the substrate; and a metal oxide nanostructure having the rods(112) which is selectively formed on the seed layer. Seed layers and non-single crystal layers comprise three component-alloy film containing the first metal, the second metal and oxygen. Seed layers are the alloy film choosing the first metal as the main component.

Abstract translation: 目的：提供一种电气设备及其制造方法，用于控制第一核以过大的尺寸长大并提高场发射特性。 构成：电气装置包括：在衬底（100）上包含金属的非单晶层（106a）; 在所述基板的顶部中的非单晶层之间的单晶的种子层（102a）; 和金属氧化物纳米结构，其具有选择性地形成在种子层上的棒（112）。 种子层和非单晶层包括含有第一金属，第二金属和氧的三组分合金膜。 种子层是以第一金属为主要成分的合金膜。

公开(公告)号：KR1020100025986A

公开(公告)日：2010-03-10

申请号：KR1020080084768

申请日：2008-08-28

Applicant: 성균관대학교산학협력단

Inventor： 김동찬 ,  조형균

IPC: C23C16/18 ,  C23C16/40 ,  B82Y30/00

Abstract: PURPOSE: A zinc oxide structure growth method using a metal organic chemical vapor deposition method introducing a gas carrier is provided to form a vertical nano-bar by controlling the flow rate of a gas carrier. CONSTITUTION: The flow rate of oxygen precursor source gas and diethyl zinc precursor is controlled and the gases are supplied through a gas feed assembly to a reaction container. A zinc oxide structure grows up on a substrate by ejecting a diethyl zinc precursor and oxygen precursor source gas through a gas ejecting unit which is installed inside the reaction container. The source gas comprises a carrier gas. The carrier gas is argon gas. The inner pressure of the reaction container is 0.1 ~ 1.0 Tor. The inner temperature of the reaction container is 300 ~ 400°C.

Abstract translation: 目的：提供一种使用引入气体载体的金属有机化学气相沉积方法的氧化锌结构生长方法，以通过控制气体载体的流速形成垂直纳米棒。 构成：控制氧前体源气体和二乙基锌前体的流速，并将气体通过气体供给组件供应到反应容器。 氧化锌结构通过喷射二乙基锌前体和氧前体源气体而通过安装在反应容器内部的气体喷射单元在基底上生长。 源气体包括载气。 载气是氩气。 反应容器的内压为0.1〜1.0 Tor。 反应容器的内部温度为300〜400℃。