公开(公告)号：KR101362291B1

公开(公告)日：2014-02-13

申请号：KR1020120116531

申请日：2012-10-19

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  김준현 ,  권용현

IPC: H01L35/34

CPC classification number: H01L35/14 ,  H01L35/20 ,  H01L35/22 ,  H01L35/34

Abstract: The present invention relates to a method for growing a nanoparticle superlattice thin film of a thermoelectric element by a solution process. The present invention comprises a S1 step of repeating a solution process of dropping metal source containing solution on a substrate while rotating the substrate to form a plurality of thin films and forming a metal oxide buffer layer having preferred directivity; a S2 step of thermal annealing the buffer layer to be crystalized; a S3 step of forming a metal oxide thin film layer by a solution process of dropping metal source containing solution on the buffer layer of the rotated substrate while rotating the substrate passing through the S2 step; and a S4 of thermal annealing the buffer layer formed in the S2 step and the thin film layer formed in the S3 step to be crystalized. [Reference numerals] (S1) Form a ZnO buffer layer on a substrate through spin coating; (S2) Crystalize a buffer layer; (S3) Form a thin film layer on the buffer layer through spin coating; (S4) Crystalize the buffer layer and the thin film layer

Abstract translation: 本发明涉及通过溶液法生长热电元件的纳米颗粒超晶格薄膜的方法。 本发明包括在旋转衬底同时旋转衬底以形成多个薄膜并形成具有优选方向性的金属氧化物缓冲层的情况下，重复将含金属源的溶液滴落在衬底上的溶液处理的S1步骤; 对要结晶化的缓冲层进行热退火的S2步骤; 通过在旋转通过S2步骤的基板的同时通过将旋转的基板的缓冲层上滴入含有金属源的溶液的溶液处理形成金属氧化物薄膜层的S3步骤; 以及在S2步骤中形成的缓冲层进行热退火的S4和在S3步骤中形成的薄膜层进行结晶化。 （S1）通过旋涂在基板上形成ZnO缓冲层; （S2）使缓冲层结晶化; （S3）通过旋涂在缓冲层上形成薄膜层; （S4）使缓冲层和薄膜层结晶化

公开(公告)号：KR101738238B1

公开(公告)日：2017-05-22

申请号：KR1020150074247

申请日：2015-05-27

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  권용현 ,  도현우

IPC: B82B3/00 ,  B82Y30/00 ,  C23C16/44 ,  C07C391/00 ,  B82Y40/00

Abstract: 본발명은적층형전구체로스피노달상분리를발생시켜나노구조체를합성하는방법에관한것으로서, (a1) 기판상에물질 A를증착시켜제1층을형성시키는단계; (a2) 제1층상에물질 A 및물질 B의제1 화합물을증착시켜제2층을형성시키는단계; (a3) 제2층위에물질 B를추가증착시켜제3층을형성시키는단계; (a4) 제1층내지제3층으로이루어진적층형전구체에가열처리를하여제2층의제1 화합물이스피노달(spinodal) 상분리를통해물질 A와물질 B의고상제2화합물및 액상물질 A로상분리를시키는단계; 및 (a5) 제1층의물질 A를 (a4) 단계의액상화된물질 A를통해제2 화합물로확산시켜나노선형상으로성장시키는단계를포함하는것을특징으로한다. 본발명은적층형전구체구조를이용하여스피노달상분리를시켜나노구조체를합성하는효과가있다.

公开(公告)号：KR1020160141066A

公开(公告)日：2016-12-08

申请号：KR1020150074247

申请日：2015-05-27

Applicant: 성균관대학교산학협력단

Inventor： 조형균 ,  권용현 ,  도현우

IPC: B82B3/00 ,  B82Y30/00 ,  C23C16/44 ,  C07C391/00 ,  B82Y40/00

Abstract: 본발명은적층형전구체로스피노달상분리를발생시켜나노구조체를합성하는방법에관한것으로서, (a1) 기판상에물질 A를증착시켜제1층을형성시키는단계; (a2) 제1층상에물질 A 및물질 B의제1 화합물을증착시켜제2층을형성시키는단계; (a3) 제2층위에물질 B를추가증착시켜제3층을형성시키는단계; (a4) 제1층내지제3층으로이루어진적층형전구체에가열처리를하여제2층의제1 화합물이스피노달(spinodal) 상분리를통해물질 A와물질 B의고상제2화합물및 액상물질 A로상분리를시키는단계; 및 (a5) 제1층의물질 A를 (a4) 단계의액상화된물질 A를통해제2 화합물로확산시켜나노선형상으로성장시키는단계를포함하는것을특징으로한다. 본발명은적층형전구체구조를이용하여스피노달상분리를시켜나노구조체를합성하는효과가있다.