인듐과 아연 금속을 이용한 신규 페남 유도체 및 이의 제조 방법
    44.
    发明公开
    인듐과 아연 금속을 이용한 신규 페남 유도체 및 이의 제조 방법 失效
    使用印度和锌的新PENAM衍生物及其制备方法

    公开(公告)号:KR1020000073204A

    公开(公告)日:2000-12-05

    申请号:KR1019990016354

    申请日:1999-05-07

    CPC classification number: Y02P20/55

    Abstract: PURPOSE: A new penam derivative using indium and zinc and a preparation method thereof are provided CONSTITUTION: A novel penam derivative represented by formula(I) is prepared by reacting 6-oxopenam of the formula(I') with ally halide of the formula (II) or acetylene halide of the formula (III) in the presence of indium or zinc. In the formula(I): R1 is allyl derivative and acetylene derivative; R2 is hydrogen, carboxylic acid salt(sodium salt and potassium salt as inorganic salt, alkyl amine salt, aromatic amine salt as organic salt) or carboxy protecting group(4-methoxy benzyl, diphenylmethyl, 4-nitrobenzyl, useful thing as protecting group of molecule in penicillin or cephalosporin compound field); R3 is hydrogen, halogen, hydroxy, acetoxy group.

    Abstract translation: 目的:提供使用铟和锌的新的penam衍生物及其制备方法构成:式(I)表示的新型penam衍生物通过式(I')的6-氧代青霉素与式(I')的式 II)或式(III)的炔酰卤在铟或锌的存在下进行。 在式(I)中:R 1是烯丙基衍生物和乙炔衍生物; R2为氢,羧酸盐(钠盐和钾盐为无机盐,烷基胺盐,芳族胺盐为有机盐)或羧基保护基(4-甲氧基苄基,二苯基甲基,4-硝基苄基,有用物质为保护基 分子在青霉素或头孢菌素化合物领域); R3是氢,卤素,羟基,乙酰氧基。

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