Abstract:
PURPOSE: An optical siloxane resin composition provides a siloxane cured material which has high optical transmittancy, heat resistance against yellowing, excellent productivity due to a photocure, high refractivity, and high hardness. CONSTITUTION: An optical siloxane resin composition includes a siloxane including a photo-ionic-polymerizable epoxy group, a photoinitiator, and an antioxidant. The siloxane including a photo-ionic-polymerizable epoxy group is formed by a sol-gel reaction of an alkoxysilane including an epoxy group. The photoinitiator includes an onium salt and/or an organic metal salt. The antioxidant is selected from a phenolic-based group, a phosphate-based group, an aminic-based group, a thioester-based group, and combinations thereof.
Abstract:
PURPOSE: A transparent hybrid resin composition is provided to have light transmittance, light resistance, heat resistance, refractivity, and mechanical strength, and to minimize shrinkage. CONSTITUTION: A transparent hybrid resin composition comprises: a thiol oligosiloxane hybrid which is manufactured by the non-hydrolytic condensation reaction of organic silanediol with thiol group-containing organic alkoxysilane(I), or a mixture with single metal alkoxide mixture and organic alkoxysilane; a vinyl oligosiloxane hybrid manufactured by the non-aqueous condensation reaction of vinyl group-containing organic alkoxy silane(II) or a mixture with metal alkoxide and the organic silanediol; an organic compound which comprises at least two or more vinyl groups; and a photoinitiator or thermoinitiator.
Abstract:
PURPOSE: A Fluorine-containing metal oxide semiconductor is provided to simplify manufacturing processes, to reduce cost, and to have excellent semiconductor properties like high current value, charge mobility, current ratio, threshold voltage, sub-threshold swing, etc. CONSTITUTION: A fluorine-containing metal oxide semiconductor aqueous solution composition comprises: one or more fluorine compound precursors selected from a group consisting of fluorine-containing metal compound and fluorine-containing organic material, and aqueous solution containing water and a catalyst. The fluorine-containing metal oxide semiconductor aqueous solution composition comprises metal salt. A manufacturing method of the fluorine-containing metal oxide semiconductor comprises a step of coating the fluorine-containing metal oxide semiconductor aqueous solution compostion on a substrate, and a step of forming fluorine-containing metal oxide semiconductor by heat-treating the substrate.
Abstract:
PURPOSE: A solution composition is provided to obtain a metal oxide semiconductor which can be formed in a solution type and shows excellent semiconductor characteristics. CONSTITUTION: A solution composition for preparing a metal oxide semiconductor for a thin film transistor comprises aluminum salts and organic salts of metal. The negative ion of organic salts of metal includes acetate. A method for manufacturing a metal oxide semiconductor comprises the steps of: preparing the solution composition; coating the solution composition on a substrate; and heating the solution composition applied on the substrate to form the metal oxide semiconductor containing aluminum metal oxide.
Abstract:
PURPOSE: A thin film transistor array panel and a method for fabricating the same are provided to have excellent stability and electronic property and be easily fabricated. CONSTITUTION: An oxide semiconductor layer(41) is formed on an insulation substrate(10), and includes a zinc acetate and a metal inorganic salt. A gate electrode(26) is overlapped with the oxide semiconductor layer. A gate insulation layer(30) is exposed between the oxide semiconductor layer and the gate electrode.
Abstract:
본 발명은 유기 실란의 축합 반응을 이용한 올리고실록산 하이브리드 및 이를 이용한 가스 차단막에 관한 것이다. 더욱 상세하게는 유기실란디올과 유기알콕시실란의 비가수 축합 반응에 의해 축합도가 높은 무기 망목구조의 중심체와 외부에 적어도 하나 이상의 유기기 또는 유기 관능기를 포함하는 것을 특징으로 하는 올리고실록산 하이브리드, 및 상기 올리고실록산 하이브리드를 이용한 단일층 또는 다층으로 이루어진 가스 차단 특성이 우수한 가스 차단막을 제공한다. 올리고실록산 하이브리드, 축합 반응, 유기알콕시실란, 유기실란디올, 가스 차단막
Abstract:
PURPOSE: A gas curtain using a multi-layered oligosiloxane hybrid coating layer and inorganic layer and a manufacturing method thereof are provided to form dense inorganic network structure in order to improve stability and condensation degree. CONSTITUTION: A method for manufacturing a gas curtain comprises the following steps of: allowing organoalkoxysilane to react to organosilane diol to obtain oligosiloxane hybrid; and coating an element or substrate with a coating liquid containing the oligosiloxane hybrid to form a coating layer. The organoalkoxysilane is a compound represented by formula 1. In the formula 1, R1 is selected from C1-C20 alkyl, C3-C8 cycloalkyl, C4-C20 alkyl substituted with C3-C8 cycloalkyl, C2-C20 alkenyl, and C6-C20 aryl groups.
Abstract:
A plasma display panel and a low temperature manufacture method thereof are provided to restrain the deformation of a substrate during a process and to implement a large-scale panel by using a compound having a 3-dimensional network structure. A plasma display panel is configured by coupling an upper plate to a lower plate. At least one of an upper dielectric(14), a lower dielectric(23), a barrier rib(24), and an encapsulant of upper and lower plates is made of a compound having a 3-dimensional network structure obtained by polymerizing and hardening an organic monomer, an organic oligomer, or a siloxane-based oligomer having a polymerization-possible functional group. The 3-dimensional network structure is obtained through the hardening under temperature of 25 °C to 300 °C. A molecular weight of the oligomer is 100 to 10,000 below. The barrier rib includes a white color pigment.
Abstract:
본 발명은 실리콘 화합물 수지를 포함하는 플라즈마 디스플레이 패널용 격벽의 제조방법을 제공한다. 제 1측면에 따른 본 발명은 기판위에 실리콘 화합물 수지층을 형성하는 단계; 상기 실리콘 화합물 수지층을 격벽 모양의 패턴이 형성된 마스터로 압착하여 전사하는 단계; 및 상기 실리콘 화합물 수지를 경화한 후 마스터를 이형시키는 단계를 포함한다. 제 2측면에 따른 본 발명은 실리콘 화합물 수지를 격벽 모양의 패턴이 형성된 마스터의 홈에 충진하는 단계; 기판상에 상기 마스터를 압착하여 전사하는 단계; 및 상기 전사된 실리콘 화합물 수지를 경화한 후 마스터를 이형시키는 단계를 포함한다. 플라즈마 디스플레이 패널, 격벽, 실리콘 화합물
Abstract:
본 발명은 패턴 복제에 사용되는 몰드 제조용 불화 유기규소 화합물, 그를 이용하여 제조된 패턴 복제용 유기-무기 혼성 몰드, 그 몰드를 이용한 패턴 복제 방법 및 그 방법에 의하여 복제된 패턴에 관한 것으로서, 보다 상세하게는, 이형제 처리와 같은 표면처리를 필요로 하지 않는 동시에 일정 수준 이상의 강도를 가지므로써, 나노 임프린트 공정 및 소프트 식각(soft lithography) 패터닝 공정에서 모두 사용가능한 새로운 몰드 제조용 불화 유기규소 화합물, 그를 이용하여 제조된 패턴 복제용 유기-무기 혼성 몰드, 그 몰드를 이용한 패턴 복제 방법 및 그 방법에 의하여 복제된 패턴에 관한 것이다. 불화 유기규소, 유기-무기, 혼성, 몰드, 패턴, 복제