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公开(公告)号：KR1020120067052A
公开(公告)日：2012-06-25
申请号：KR1020100128455
申请日：2010-12-15
Applicant: 한국기계연구원
Abstract: PURPOSE: A nano-composite including quantum dot for wavelength conversion and a manufacturing method thereof are provided to improve light stability and luminous effect and to have irreversible property by performing annealing processing at high temperature. CONSTITUTION: A manufacturing method of nano-composite comprises the following steps: obtaining a mixture by mixing quantum dot and polymer; obtaining annealing-processed mixture by performing annealing process; and obtaining nano-composite including the quantum dot by irradiating UV on the annealing processed mixture. The annealing is performed at 100-170 deg. Celsius for 1-3 hours. The UV irradiation is processed with UV intensity of 30-50W, wavelength of 20-40 nano meters and exposure time of 1-24 hours.
Abstract translation: 目的：提供一种包括用于波长转换的量子点的纳米复合物及其制造方法，以提高光稳定性和发光效果，并通过在高温下进行退火处理具有不可逆性。 构成：纳米复合材料的制造方法包括以下步骤：通过混合量子点和聚合物获得混合物; 通过退火处理获得退火处理的混合物; 并通过在退火处理的混合物上照射UV获得包括量子点的纳米复合物。 退火在100-170度进行。 摄氏1-3小时。 紫外线照射的光强度为30-50W，波长为20-40纳米，曝光时间为1-24小时。
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公开(公告)号：KR101129416B1
公开(公告)日：2012-03-26
申请号：KR1020090069648
申请日：2009-07-29
Applicant: 한국기계연구원
Abstract: 본 발명은 검사 대상물이 투입되는 하나 이상의 반응부와 상기 반응부가 가열되도록 탄소나노튜브 박막 가열부를 포함하는 바이오 센서를 제공한다.
본 발명의 바이오 센서는 탄소나노튜브 박막 가열부를 열 방출 소재로 채택하여 반응부 내의 반응물의 온도를 빠른 속도로 조절할 수 있으므로, PCR 기기, 핵산 서열분석기, 유전자 칩, 단백질 칩, 효소작용연구(enzyme kinetic studies) 등에 유용하게 사용될 수 있다.
반응부, 탄소나노튜브 박막 가열부, 온도감지센서, 제어수단-
公开(公告)号：KR101097217B1
公开(公告)日：2011-12-22
申请号：KR1020080091148
申请日：2008-09-17
Applicant: 한국기계연구원
CPC classification number: G01R3/00 , G01R1/06727 , G01R1/06744 , Y10S977/742 , Y10T29/49155
Abstract: 표면에카본나노튜브가코팅된본 발명의미세접촉프로브에의하면, 프로브와반도체칩 사이의접촉저항이낮아지고고주파특성이향상되어더욱정확한측정이가능하게된다.
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公开(公告)号：KR1020110091361A
公开(公告)日：2011-08-11
申请号：KR1020100011166
申请日：2010-02-05
Applicant: 한국기계연구원
Abstract: PURPOSE: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell is provided to improve size uniformity of particles, productivity, and coating uniformity of ZnS shell and to reduce the reaction time. CONSTITUTION: A method for fabricating an indium phosphide quantum dot coated with Group II-VI compound shell comprises (S10) forming an indium phosphide core and (S20) forming a Group II-VI compound semiconductor shell on the surface of the indium phosphide core using a monomolecular precursor which includes Group II elements and includes Group VI elements at the same time and enables the formation the Group II-VI compound by being degraded in the heating to the predetermined temperature or more.
Abstract translation: 目的：提供一种制备涂有II-VI族化合物壳的磷化铟量子点的方法，以改善粒子的尺寸均匀性，生产率和ZnS壳的涂层均匀性，并减少反应时间。 构成：用于制造涂覆有II-VI族化合物壳的铟磷化物量子点的方法包括：（S10）形成磷化铟核，和（S20）在磷化铟芯的表面上形成II-VI族化合物半导体外壳，使用 包括II族元素并且同时包含VI族元素的单分子前体，并且能够通过在加热中降解至预定温度或更高而形成II-VI族化合物。
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公开(公告)号：KR101003807B1
公开(公告)日：2010-12-23
申请号：KR1020080059031
申请日：2008-06-23
Applicant: 한국기계연구원
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 본 발명은 나노 소재를 포함하는 투명한 태양 전지에 관한 것으로서, 광투과성 기판과, 상기 광투과성 기판 상에 형성된 제1 투명 전극과, 상기 투명 전극 상에 형성된 PN 접합 반도체층, 및 상기 PN접합 반도체층 상에 형성된 제2 투명 전극을 포함하며, 상기 PN접합 반도체층은 반도체성을 갖는 나노 와이어(nano wire), 나노 튜브(nano tube), 또는 나노 파티클(nano particle)을 포함하는 나노 소재를 포함한다. 이 때, PN접합 반도체층을 얇게 형성하여 투명한 태양 전지를 제공할 수 있다.
태양 전지, 나노 소재, 나노 와이어, 나노 튜브-
Patent Agency Ranking
公开(公告)号：KR100979538B1
公开(公告)日：2010-09-01
申请号：KR1020090010716
申请日：2009-02-10
Applicant: 한국기계연구원 , 금오공과대학교 산학협력단
IPC: H05B3/84
Abstract: 본 발명은 우수한 도전성과 발열 성능을 갖고, 국부적인 과열 현상을 최소화하여 전면에 걸쳐 발열이 균일하게 이루어지도록, 기판과, 상기 기판의 한쪽 면에 형성되는 도전성 박막, 기판 일측에 설치되는 제1 메인전극과 제2 메인전극, 상기 제1 메인전극과 제2 메인전극에서부터 각각 단계적으로 분기되어 상기 도전성 박막을 복수 개의 구역으로 분할하고 각 구역을 사이에 두고 전기적으로 연결되는 가지전극을 포함하는 발열기판을 제공한다.
메인전극, 가지전극, 분기, 전기단열대-
公开(公告)号：KR1020100089606A
公开(公告)日：2010-08-12
申请号：KR1020090008936
申请日：2009-02-04
Applicant: 한국기계연구원
CPC classification number: H01L51/5092 , B82Y30/00 , H01L27/322 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5088
Abstract: PURPOSE: A display device is provided to improve light emitting efficiency by forming a color conversion layer which converts light into various colors into a plurality of nano quantum dots. CONSTITUTION: An anode layer(10) is formed on a substrate in a predetermined pattern. A color filter(11) is formed on the anode layer. A color conversion layer(12) is formed on the color filter. A hole injection/transmission layer(13) is formed on the color conversion layer. A light emitting layer(14) is formed on the hole injection/transmission layer. A cathode layer(16) is formed on the light emitting layer.
Abstract translation: 目的：提供一种显示装置，通过形成将光转换为多种颜色的多个纳米量子点的颜色转换层来提高发光效率。 构成：以预定图案在基板上形成阳极层（10）。 在阳极层上形成滤色器（11）。 在滤色器上形成颜色转换层（12）。 在颜色转换层上形成空穴注入/透射层（13）。 在空穴注入/透射层上形成发光层（14）。 在发光层上形成阴极层（16）。
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公开(公告)号：KR1020100088866A
公开(公告)日：2010-08-11
申请号：KR1020090007999
申请日：2009-02-02
Applicant: 한국기계연구원
Abstract: PURPOSE: A high efficient quantum-based light emitting device and a method for manufacturing the same are provided to improve the combination possibility of electrons and holes by forming a nano-pattern with fine concavo=convex structures on the light emitting diode layer which is composed of nano-quantum-dots. CONSTITUTION: A hole-transferring layer(20) is formed in a first electrode(10). A pre-set thickness of the quantum-dot layer is formed on the hole-transferring layer. The nano-quantum-dot layer is pattern to form a light emitting layer(30a) which is composed of a plurality of nano-patterns(31) with fine concavo-convex structure. A second electrode layer(40) is formed on the light emitting layer.
Abstract translation: 目的：提供一种高效量子基发光器件及其制造方法，以通过在组成的发光二极管层上形成具有细小凹凸结构的纳米图案来改善电子和空穴的组合可能性 的纳米量子点。 构成：在第一电极（10）中形成空穴转移层（20）。 在空穴转移层上形成量子点层的预设厚度。 纳米量子点层是形成由多个具有精细凹凸结构的纳米图案（31）组成的发光层（30a）的图案。 在发光层上形成第二电极层（40）。
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公开(公告)号：KR1020100061107A
公开(公告)日：2010-06-07
申请号：KR1020080120000
申请日：2008-11-28
Applicant: 한국기계연구원
CPC classification number: H05B2214/04 , H05B6/10 , C01B32/158 , G01K13/00 , H05B1/0202 , H05B6/36 , H05B2213/07
Abstract: PURPOSE: An induction heater is provided to easily heat an object by heating a carbon nano tube heating layer through an induction coil. CONSTITUTION: An induction heater includes a carbon nano tube heating layer(116), an induction coil(123), a power source(121), a temperature sensor(160), and a controller(150). A carbon nano tube heating layer is attached to the object. The carbon nano tube heating layer has light transmittance. An induction coil is arranged near the carbon nano tube heating layer. The power source is electrically connected to the induction coil. The temperature sensor is arranged near the object. The controller is connected to the temperature sensor and the power source to control the temperature of the object.
Abstract translation: 目的：提供感应加热器，通过感应线圈加热碳纳米管加热层来容易地加热物体。 构成：感应加热器包括碳纳米管加热层（116），感应线圈（123），电源（121），温度传感器（160）和控制器（150）。 碳纳米管加热层附着在物体上。 碳纳米管加热层具有透光率。 感应线圈布置在碳纳米管加热层附近。 电源电连接到感应线圈。 温度传感器布置在物体附近。 控制器连接到温度传感器和电源，以控制物体的温度。
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公开(公告)号：KR1020090132850A
公开(公告)日：2009-12-31
申请号：KR1020080059031
申请日：2008-06-23
Applicant: 한국기계연구원
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/06 , H01L31/18
Abstract: PURPOSE: A transparent solar cell and a manufacturing method thereof are provided to secure transparency stably by forming a PN junction semiconductor layer made of the semiconductor nano material. CONSTITUTION: A first transparent electrode(123) is formed on an optical light transmission substrate(121). A PN junction semiconductor layer(130) is formed on a first transparent electrode. A PN junction semiconductor layer includes a semiconductor nano wire, a nano tube, or a nano particle. The PN junction semiconductor layer includes a P type semiconductor layer(132) and an N type semiconductor(134). A second transparent electrode(125) is formed on the PN junction semiconductor layer. The first and second transparent electrodes are connected to the PN junction semiconductor layer by Schottky junction.
Abstract translation: 目的：提供透明太阳能电池及其制造方法，以通过形成由半导体纳米材料制成的PN结半导体层来稳定地确保透明性。 构成：在光传输基板（121）上形成第一透明电极（123）。 在第一透明电极上形成PN结半导体层（130）。 PN结半导体层包括半导体纳米线，纳米管或纳米颗粒。 PN结半导体层包括P型半导体层（132）和N型半导体（134）。 第二透明电极（125）形成在PN结半导体层上。 第一和第二透明电极通过肖特基结连接到PN结半导体层。
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