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公开(公告)号：KR101069613B1
公开(公告)日：2011-10-05
申请号：KR1020090083346
申请日：2009-09-04
Applicant: 한국화학연구원
IPC: H01L21/208 , H01L21/324
Abstract: 보다구체적으로저온열처리를통해서결정상을가지는산화물반도체를제조하는장점이있으며, 결정화반응촉진을위한촉매나자외선및 다른공정을거치지않고, 간단한공정으로결정화를제어할수 있는장점이있다.
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42.发明授权저융점 이차상을 포함하고 화학양론비가 맞는 ＣＩ(Ｇ)Ｓ 입자를 이용한 치밀한 미세구조를 가지는 ＣＩ(Ｇ)Ｓ 막의 제조 방법 有权使用含有低熔点相的化学计量CI（G）S颗粒制造具有致密微结构的CI（G）S薄膜的方法
公开(公告)号：KR101069576B1
公开(公告)日：2011-10-05
申请号：KR1020100014260
申请日：2010-02-17
Applicant: 한국화학연구원
IPC: C09D1/00 , H01L31/0445 , H01L31/0749
CPC classification number: Y02E10/50
Abstract: 본발명은 a)구리화합물, 인듐화합물및 셀레늄화합물을끓는점이 200℃이상인반응용매와혼합하는단계; b)상기혼합액을마이크로파를조사하여 200~300℃에서 15~40분동안반응하여 CuSe 및 CuSe가형성되어있는 CI(G)S입자의제조단계; 및 c)상기CuSe 및 CuSe가생성되어함유된 CI(G)S 입자를기판에코팅하고열처리하여 CI(G)S 막을제조하는단계; 를포함하는 CI(G)S 막의제조방법에관한것이다본 발명에의한 CI(G)S 입자는저융점이차상인 CuSe 및 CuSe를포함하여상기 c)단계에서 550C 내외의열처리과정를통하여 CI(G)S막을제조하였을때놀랍게도상기제조된 CI(G)S 막의치밀도가우수한효과가있다.
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43.发明公开저융점 이차상을 포함하고 화학양론비가 맞는 ＣＩ(Ｇ)Ｓ 입자를 이용한 치밀한 미세구조를 가지는 ＣＩ(Ｇ)Ｓ 막의 제조 방법 有权使用含有低熔点的相变晶体（G）S颗粒的透明微结构制备CI（G）S薄膜的方法
公开(公告)号：KR1020110094703A
公开(公告)日：2011-08-24
申请号：KR1020100014260
申请日：2010-02-17
Applicant: 한국화학연구원
IPC: C09D1/00 , H01L31/0445 , H01L31/0749
CPC classification number: Y02E10/50 , C09D1/00 , H01L31/0445 , H01L31/0749
Abstract: PURPOSE: A method for fabricating a CI(G)S thin-film is provided to prepare a film with excellent density including low melting point CuSe and CuSe2 binary phase through an inexpensive process and to control the stoichiometric ratio of Cu : In : Se without a separate additional process. CONSTITUTION: A method for fabricating a CI(G)S thin-film comprises the steps of: (i) mixing a copper compound, an indium compound and a selenium compound with a reaction solvent having the boiling point of 200 °C or greater; (ii) irradiating microwaves to the mixed solution and performing the reaction at 200~300 °C for 15~40 minutes to prepare CI(G)S particles in which CuSe and CuSe2 are formed; and (iii) applying CI(G)S particles to a substrate and heating the coated material to prepare the CI(G)S thin-film.
Abstract translation: 目的：提供一种制备CI（G）S薄膜的方法，通过廉价的方法制备具有低熔点CuSe和CuSe2二元相的密度极好的膜，并控制Cu：In：Se的化学计量比，不含 一个单独的附加过程。 构成：制备CI（G）S薄膜的方法包括以下步骤：（i）将铜化合物，铟化合物和硒化合物与沸点为200℃或更高的反应溶剂混合; （ii）向混合溶液中照射微波，在200〜300℃反应15〜40分钟，制备形成CuSe和CuSe2的CI（G）S颗粒; 和（iii）将CI（G）S颗粒施加到基材上并加热涂覆的材料以制备CI（G）S薄膜。
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44.发明公开도파민 Ｄ3 및 Ｄ4 수용체의 선택적 활성을 지닌 신규4,5-디히드로이소옥사졸릴알킬피페라진 유도체와, 이의제조방법 失效在DOPAMINE D3和D4受体上具有选择性生物活性的新的4,5-二羟基甲基丙烯酰胺衍生物及其制备方法
公开(公告)号：KR1020020043413A
公开(公告)日：2002-06-10
申请号：KR1020000073122
申请日：2000-12-04
IPC: C07D413/14
CPC classification number: C07D413/04 , C07D261/08
Abstract: PURPOSE: Provided are novel 4,5-dihydroisoxazolylalkylpiperazine derivatives having selective biological activity to dopamine D3 and D4 receptors, and their preparation method by reductive amination in the presence of reductant. CONSTITUTION: 4,5-dihydroisoxazolylalkylpiperazine derivative is represented by the formula(1), wherein R1, R2, R3, R4 and R5 are identical or different from each other, and represents individually hydrogen atom, halogen atom, C1-C6 alkyl group, C1-C6 alkoxy group, C2-C6 alkenyl group, hydroxy group , hydroxymethyl group, aryl group, heteroaryl group, amino group, C1-C6 alkyl amino group, carbonyl group, C3-C8 cycloalkyl group, or C3-C8 heterocyclic group; R6 represents hydrogen atom, halogen atom, alkyl group, C1-C6 alkoxy group, aryl group, pyridyl group, heterocyclic group or pyrimidyl group; X represents CH or nitrogen atom; and n is 3 or 4.
Abstract translation: 目的：提供对多巴胺D3和D4受体具有选择性生物活性的新型4,5-二氢异恶唑烷基哌嗪衍生物及其在还原剂存在下还原胺化的制备方法。 构成：4,5-二氢异恶唑基烷基哌嗪衍生物由式（1）表示，其中R 1，R 2，R 3，R 4和R 5彼此相同或不同，并且表示单独的氢原子，卤素原子，C1-C6烷基， C1-C6烷氧基，C2-C6烯基，羟基，羟甲基，芳基，杂芳基，氨基，C1-C6烷基氨基，羰基，C3-C8环烷基或C3-C8杂环基; R6表示氢原子，卤素原子，烷基，C1-C6烷氧基，芳基，吡啶基，杂环基或嘧啶基; X表示CH或氮原子; n为3或4。
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Patent Agency Ranking
公开(公告)号：KR1020180005957A
公开(公告)日：2018-01-17
申请号：KR1020160086334
申请日：2016-07-07
Applicant: 한국화학연구원
IPC: H01B1/22 , B29C67/00 , B29C67/24 , B29B7/08 , C08K9/04 , C08K3/04 , C08K3/08 , C08K9/12 , C01B31/02 , B33Y70/00
CPC classification number: B29B7/08 , B29C67/00 , B29C67/24 , B33Y70/00 , C01B32/168 , C08K3/04 , C08K3/08 , C08K9/04 , C08K9/12 , H01B1/22 , B29C64/00
Abstract: 본발명은인쇄가가능하고, 유연성및 신축성을가지면서우수한전도도를구현할수 있어유연성이요구되는전자부품에적용할수 있을뿐만아니라 3차원인쇄가가능한유연전극용복합소재및 이의제조방법에관한것이다.
Abstract translation: 本发明的印刷是可能的，并且，在灵活性和分支，而用于弹性复合材料，以及被施加到电子部件是需要挠性可以实现优异的导电性，弹性和它们的制备三维印刷可能的电极。
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公开(公告)号：KR101744027B1
公开(公告)日：2017-06-07
申请号：KR1020160031959
申请日：2016-03-17
Applicant: 한국화학연구원
CPC classification number: C23C18/1262 , C23C18/04 , C23C18/1675 , C23C18/168
Abstract: 본발명은 a) 아민기로표면기능화된탄소나노튜브, 및카르복실산기함유수용성고분자를분산매에분산하여카르복실산기로표면기능화된탄소나노튜브분산액을제조하는단계; 및 b) 상기분산액을기판상에도포한후, 무전해도금을통해상기분산액이도포된기판상에금속박막을형성하는단계;를포함하는, 전도성금속박막의제조방법에관한것이다.
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公开(公告)号：KR1020170061401A
公开(公告)日：2017-06-05
申请号：KR1020150166372
申请日：2015-11-26
Applicant: 한국화학연구원
Abstract: 본발명은전극활물질용복합체에관한것으로, 상세하게, 본발명에따른복합체는정전기적인력에의해복합화된전이금속산화물, 1차및 2차아민기를갖는분지형수용성고분자및 환원된산화그래핀(rGO)을포함한다.
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公开(公告)号：KR1020150138088A
公开(公告)日：2015-12-09
申请号：KR1020150075849
申请日：2015-05-29
Applicant: 한국화학연구원
CPC classification number: B22F1/0014 , B22F1/0018 , B22F1/0062 , B22F1/02 , B22F9/18 , B22F9/24 , B22F2301/052 , B22F2301/10 , B22F2301/15 , B22F2301/30 , B22F2999/00 , B33Y70/00 , Y02P10/295 , B22F3/008 , B22F3/1055 , B22F2202/17
Abstract: 본발명에따른금속나노입자는적어도바이모달(bimodal) 이상의크기분포를가지며, 금속나노입자의크기분포에서, 피크의중심크기를기준으로, 가장작은중심크기를갖는제1피크의면적을크기분포를이루는모든피크의면적을합한총 면적으로나눈비가 0.4 내지 0.8을만족하며, 유기산을포함하는캡핑층으로캡핑된금속나노입자이다.
Abstract translation: 根据本发明，金属纳米颗粒具有至少双峰尺寸分布，其中通过将基于金属纳米粒子的尺寸分布中的峰的中值大小的具有最小中值大小的第一峰的面积除以 ，构成尺寸分布的所有峰的总面积达到0.4-0.8; 并用含有机酸的覆盖层封盖。
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公开(公告)号：KR1020150128514A
公开(公告)日：2015-11-18
申请号：KR1020140107696
申请日：2014-08-19
Applicant: 한국화학연구원
IPC: H01M4/139 , H01M4/38 , H01M4/62 , H01M4/1395 , H01M10/052
CPC classification number: H01M4/139 , H01M4/13 , H01M4/1395 , H01M4/38 , H01M4/62 , H01M10/052
Abstract: 본발명은리튬이차전지용전극및 이의제조방법에관한것으로, 보다상세하게는 2차원형태의전도성소재와구형또는 1차원형태의나노금속소재및 활성소재의단순혼합만으로소재간의혼성화가가능하고, 이를통하여, 전도성소재-나노금속소재-활성소재간의 3차원네트워킹을형성함으로써, 고용량을가지면서반복충방전특성이우수한리튬이차전지용전극및 이의제조방법에관한것이다.
Abstract translation: 锂二次电池用电极及其制造方法技术领域本发明涉及锂二次电池用电极及其制造方法，更具体地说，涉及锂二次电池用电极及其制造方法，其仅在材料之间进行杂交， 二维形状，球状或一维形状的纳米金属材料和活性材料，并且通过在导电材料 - 纳米金属材料活性材料中形成三维网络而具有高容量和优异的重复充电/放电性能。
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