公开(公告)号：WO2011104045A1

公开(公告)日：2011-09-01

申请号：PCT/EP2011/050126

申请日：2011-01-06

Applicant: ASML NETHERLANDS B.V. ,  BANINE, Vadim ,  KOOLE, Roelof ,  WUISTER, Sander ,  PEETERS, Emiel

Inventor： BANINE, Vadim ,  KOOLE, Roelof ,  WUISTER, Sander ,  PEETERS, Emiel

IPC: G03F7/00

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: Treatment of a layer comprising self-assemblable polymer at a surface of a substrate is disclosed. In an embodiment, the treatment includes arranging a zone of temperature change to sweep across the layer, wherein a temperature of the layer within the zone differs from an initial temperature of the layer prior to passage of the zone.

Abstract translation: 公开了在衬底表面处理包含可自组装聚合物的层。 在一个实施方案中，处理包括布置温度变化区域以扫过层，其中该区域内的层的温度与该区域通过之前该层的初始温度不同。

公开(公告)号：WO2011035963A1

公开(公告)日：2011-03-31

申请号：PCT/EP2010/061203

申请日：2010-08-02

Applicant: ASML NETHERLANDS B.V. ,  YAKUNIN, Andrei ,  BANINE, Vadim ,  VAN HERPEN, Maarten ,  SOER, Wouter ,  JAK, Martin

Inventor： YAKUNIN, Andrei ,  BANINE, Vadim ,  VAN HERPEN, Maarten ,  SOER, Wouter ,  JAK, Martin

IPC: G03F7/20 ,  G02B5/00 ,  G02B5/20

CPC classification number: G03F7/70575 ,  G02B5/201 ,  G02B5/208

Abstract: A spectral purity filter, in particular for use in a lithographic apparatus using EUV radiation for the projection beam, includes a plurality of apertures in a substrate. The apertures are defined by walls having side surfaces that are inclined to the normal to a front surface of the substrate.

Abstract translation: 光谱纯度滤光器，特别是在用于投影光束的EUV辐射的光刻设备中使用的光谱纯度滤光器包括衬底中的多个孔。 孔由具有倾斜到基底正面的法线侧面的壁限定。

公开(公告)号：WO2010018046A1

公开(公告)日：2010-02-18

申请号：PCT/EP2009/059178

申请日：2009-07-16

Applicant: ASML NETHERLANDS B.V. ,  BANINE, Vadim ,  SJMAENOK, Leonid

Inventor： BANINE, Vadim ,  SJMAENOK, Leonid

IPC: G03F7/20 ,  G21K1/06

CPC classification number: G03F7/70958 ,  B82Y10/00 ,  G03F7/70575 ,  G21K1/062

Abstract: Embodiments of the invention relate to a mirror (30). The mirror includes a mirroring surface and a profiled coating layer (32a) having an outer surface, wherein one or more wedged elements are formed by the outer surface with respect to the mirroring surface, and wherein the one or more wedged elements having a wedge angle (ø) in a range of approximately 10 - 200 mrad. The profiled coating layer may have a curved outer surface. The profiled coating layer may be formed from at least one of the following materials: Be, B, C, P, K, Ca, Sc, Br, Rb, Sr, Y, Zr, Ru, Nb, Mo, Ba, La, Ce, Pr, Pa and U.

Abstract translation: 本发明的实施例涉及一种反射镜（30）。 反射镜包括镜面和具有外表面的成型涂层（32a），其中一个或多个楔形元件相对于镜面由外表面形成，并且其中一个或多个楔形元件具有楔角 （ø）在约10 - 200 mrad范围内。 成型涂层可以具有弯曲的外表面。 成型涂层可以由以下材料中的至少一种形成：Be，B，C，P，K，Ca，Sc，Br，Rb，Sr，Y，Zr，Ru，Nb，Mo，Ba，La， Ce，Pr，Pa和U.

公开(公告)号：WO2010006847A1

公开(公告)日：2010-01-21

申请号：PCT/EP2009/057097

申请日：2009-06-09

Applicant: ASML NETHERLANDS B.V. ,  BANINE, Vadim ,  JAK, Martin ,  SOER, Wouter ,  VAN HERPEN, Maarten

Inventor： BANINE, Vadim ,  JAK, Martin ,  SOER, Wouter ,  VAN HERPEN, Maarten

IPC: G03F7/20

CPC classification number: G03F7/70925

Abstract: A method for removal of a deposition on an uncapped multilayer mirror of an apparatus. The method includes providing a gas comprising one or more Of H 2 , D 2 and DH, and one or more additional compounds selected from hydrocarbon compounds and/or silane compounds in at least part of the apparatus; producing hydrogen and/or deuterium radicals and radicals of the one or more additional compounds, from the gas; and bringing the uncapped multilayer mirror with deposition into contact with at least part of the hydrogen and/or deuterium radicals and the radicals of the one or more additional compounds to remove at least part of the deposition.

Abstract translation: 一种用于去除装置的无盖多层反射镜上的沉积的方法。 该方法包括在装置的至少一部分中提供包含H 2，D 2和DH中的一种或多种的气体，以及选自烃化合物和/或硅烷化合物的一种或多种另外的化合物; 从气体产生氢和/或氘自由基和一种或多种另外的化合物的基团; 并且使具有沉积的未封盖的多层反射镜与至少部分氢和/或氘基和一种或多种另外的化合物的基团接触以除去至少部分沉积物。

公开(公告)号：EP3049870A2

公开(公告)日：2016-08-03

申请号：EP14777038.2

申请日：2014-09-24

Applicant: ASML Netherlands B.V.

Inventor： BANINE, Vadim ,  BARTRAIJ, Petrus ,  VAN GORKOM, Ramon ,  AMENT, Lucas ,  DE JAGER, Pieter ,  DE VRIES, Gosse ,  DONKER, Rilpho ,  ENGELEN, Wouter ,  FRIJNS, Olav ,  GRIMMINCK, Leonardus ,  KATALENIC, Andelko ,  LOOPSTRA, Erik ,  NIENHUYS, Han-Kwang ,  NIKIPELOV, Andrey ,  RENKENS, Michael ,  JANSSEN, Franciscus ,  KRUIZINGA, Borgert

IPC: G03F7/20 ,  G03F1/84 ,  G02B27/00 ,  G02B5/18 ,  G02B27/10 ,  G02B27/12 ,  G02B27/14 ,  G02B27/42 ,  H01S3/09 ,  H05H7/04 ,  G01N21/956 ,  G02B27/09 ,  G21K1/06

CPC classification number: G21K1/067 ,  G01N2021/95676 ,  G02B5/1814 ,  G02B5/1823 ,  G02B5/1838 ,  G02B5/1861 ,  G02B27/0025 ,  G02B27/0938 ,  G02B27/10 ,  G02B27/1086 ,  G02B27/12 ,  G02B27/14 ,  G02B27/142 ,  G02B27/146 ,  G02B27/4272 ,  G03F1/84 ,  G03F7/70025 ,  G03F7/70208 ,  G03F7/70566 ,  G03F7/70891 ,  G03F7/70991 ,  G21K2201/065 ,  H01S3/0903 ,  H05H7/04

Abstract: A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

公开(公告)号：EP3011645A2

公开(公告)日：2016-04-27

申请号：EP14732153.3

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： NIKIPELOV, Andrey ,  FRIJNS, Olav ,  DE VRIES, Gosse ,  LOOPSTRA, Erik ,  BANINE, Vadim ,  DE JAGER, Pieter ,  DONKER, Rilpho ,  NIENHUYS, Han-Kwang ,  KRUIZINGA, Borgert ,  ENGELEN, Wouter ,  LUITEN, Otger ,  AKKERMANS,Johannes ,  GRIMMINCK, Leonardus ,  LITVINENKO, Vladimir

IPC: H01S3/09 ,  G03F7/20 ,  H05H7/04 ,  G01J1/04 ,  G02B26/02 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  H01S3/00

CPC classification number: G03F7/70033 ,  G01J1/0407 ,  G01J1/0418 ,  G01J1/26 ,  G01J1/429 ,  G02B1/06 ,  G02B5/205 ,  G02B26/023 ,  G03F7/70008 ,  G03F7/7055 ,  G03F7/70558 ,  G03F7/7085 ,  G21K1/10 ,  H01S3/005 ,  H01S3/0085 ,  H01S3/0903 ,  H05H7/04

Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

公开(公告)号：EP3011645B1

公开(公告)日：2019-03-13

申请号：EP14732153.3

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： NIKIPELOV, Andrey ,  FRIJNS, Olav ,  DE VRIES, Gosse ,  LOOPSTRA, Erik ,  BANINE, Vadim ,  DE JAGER, Pieter ,  DONKER, Rilpho ,  NIENHUYS, Han-Kwang ,  KRUIZINGA, Borgert ,  ENGELEN, Wouter ,  LUITEN, Otger ,  AKKERMANS,Johannes ,  GRIMMINCK, Leonardus ,  LITVINENKO, Vladimir

IPC: G03F7/20 ,  G01J1/26 ,  G01J1/42 ,  H01S3/09 ,  H05H7/04 ,  G01J1/04 ,  G02B26/02 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  H01S3/00

公开(公告)号：EP2678743A1

公开(公告)日：2014-01-01

申请号：EP12702451.1

申请日：2012-01-18

Applicant: ASML Netherlands B.V.

Inventor： YAKUNIN, Andrei ,  BANINE, Vadim ,  FRIJNS, Olav

IPC: G03F7/20 ,  G21K1/06 ,  G02B5/08

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B5/0891 ,  G03F7/70058 ,  G21K1/062 ,  G21K2201/061

Abstract: A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.

公开(公告)号：EP2261699A1

公开(公告)日：2010-12-15

申请号：EP10181598.3

申请日：2006-04-26

Applicant: ASML Netherlands B.V.

Inventor： VAN HERPEN, Maarten ,  BAKKER, Levinus ,  BANINE, Vadim ,  KLUNDER, Derk

IPC: G02B5/08 ,  G02B1/10 ,  G02B5/28 ,  G03F7/20 ,  G21K1/06

CPC classification number: G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: A multi-layer mirror includes on top of the multi-layer mirror a spectral purity enhancement layer, for example for application in an EUV lithographic apparatus. This spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may optionally be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. Hence, multi-layer mirrors with the following configurations are possible: multi-layer mirror/first spectral purity enhancement layer; multi-layer mirror/intermediate layer/first spectral purity enhancement layer; and multi-layer mirror/second spectral purity enhancement layer/intermediate layer/first spectral purity enhancement layer. The spectral purity of normal incidence radiation may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

公开(公告)号：EP2261699B1

公开(公告)日：2013-03-27

申请号：EP10181598.3

申请日：2006-04-26

Applicant: ASML Netherlands B.V.

Inventor： VAN HERPEN, Maarten ,  BAKKER, Levinus ,  BANINE, Vadim ,  KLUNDER, Derk

IPC: G02B5/08 ,  G02B1/10 ,  G02B5/28 ,  G03F7/20 ,  G21K1/06

CPC classification number: G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: A multi-layer mirror includes on top of the multi-layer mirror a spectral purity enhancement layer, for example for application in an EUV lithographic apparatus. This spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may optionally be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. Hence, multi-layer mirrors with the following configurations are possible: multi-layer mirror/first spectral purity enhancement layer; multi-layer mirror/intermediate layer/first spectral purity enhancement layer; and multi-layer mirror/second spectral purity enhancement layer/intermediate layer/first spectral purity enhancement layer. The spectral purity of normal incidence radiation may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.