公开(公告)号：US20140078486A1

公开(公告)日：2014-03-20

申请号：US13983214

申请日：2012-01-18

Applicant: ASML Netherlands B.V.

Inventor： Andrei Mikhailovich Yakunin ,  Vadim Yevgenyevich Banine ,  Olav Waldemar Vladimir Frijns

IPC: G03F7/20 ,  G02B5/08

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B5/0891 ,  G03F7/70058 ,  G21K1/062 ,  G21K2201/061

Abstract: A grazing incidence reflector (300) for EUV radiation includes a first mirror layer (310) and a multilayer mirror structure (320) beneath the first mirror layer. The first mirror layer reflects at least partially EUV radiation incident on the reflector with grazing incidence angles in a first range, and the first mirror layer transmits EUV radiation in a second range of incidence angles, which overlaps and extends beyond the first range of incidence angles. The multilayer mirror structure reflects EUV radiation that is incident on the reflector with grazing incidence angles in a second range that penetrates through the first mirror layer. A grazing incidence reflector can be used in a lithographic apparatus and in manufacturing a device by a lithographic process.

Abstract translation: 用于EUV辐射的掠入射反射器（300）包括第一镜层下面的第一镜层（310）和多层反射镜结构（320）。 第一镜层反射入射在反射器上的至少一部分EUV辐射，其具有在第一范围内的掠入射角，并且第一镜层在与入射角的第一范围重叠并延伸超过入射角的第二范围内传输EUV辐射 。 多层反射镜结构反射入射在反射器上的EUV辐射，其中掠射入射角在穿过第一镜层的第二范围内。 掠入射反射器可以用在光刻设备中并且通过光刻工艺制造器件。

公开(公告)号：US12117736B2

公开(公告)日：2024-10-15

申请号：US17621472

申请日：2020-06-05

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Satish Achanta ,  Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Stef Marten Johan Janssens ,  Andrey Nikipelov

IPC: G03F7/00 ,  G03F1/82 ,  H01L21/683 ,  H01L21/687

CPC classification number: G03F7/707 ,  G03F1/82 ,  H01L21/6831 ,  H01L21/68721

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

公开(公告)号：US20220342315A1

公开(公告)日：2022-10-27

申请号：US17621472

申请日：2020-06-05

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Satish Achanta ,  Johannes Hubertus Josephina Moors ,  Vadim Yevgenyevich Banine ,  Stef Marten Johan Janssens ,  Andrey Nikipelov

IPC: G03F7/20 ,  H01L21/683 ,  G03F1/82 ,  H01L21/687

Abstract: A lithographic apparatus comprising: a clamping surface for supporting a substrate, wherein a property of the clamping surface is defined by at least one clamping surface parameter, and wherein the property of the clamping surface has been selected to exhibit low wear; a clamping apparatus for actuating a clamping operation between the clamping surface and the substrate, wherein the clamping operation is defined at least in part by at least one interface characteristic between the clamping surface and the substrate; and a processing station, operable to apply an adjustment to a first property of the substrate to optimize at least one interface characteristic of a particular clamping operation in dependence on the clamping surface parameter and at least one substrate surface parameter which defines a second property of the substrate.

公开(公告)号：US20200096880A1

公开(公告)日：2020-03-26

申请号：US16571956

申请日：2019-09-16

Applicant: ASML Netherlands B.V.

Inventor： Andrey NIKIPELOV ,  Vadim Yevgenyevich Banine ,  Christian Gerardus Norbertus Cloin ,  Edwin Te Sligte ,  Marcus Adrianus Van De Kerkhof ,  Ferdinandus Martinus Jozef Henri Van De Weterring

IPC: G03F7/20

Abstract: A component for use in a patterning device environment including a patterning device, wherein the component is treated to suppress EUV plasma-induced contaminant release and/or atomic hydrogen or other radicals induced defectivity. A conduit array comprising at least one conduit, wherein the at least one conduit has been treated to promote adhesion of a contaminant to the at least one conduit.

公开(公告)号：US10580545B2

公开(公告)日：2020-03-03

申请号：US14917623

申请日：2014-09-24

Applicant: ASML Netherlands B.V.

Inventor： Vadim Yevgenyevich Banine ,  Petrus Rutgerus Bartraij ,  Ramon Pascal Van Gorkom ,  Lucas Johannes Peter Ament ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Rilpho Ludovicus Donker ,  Wouter Joep Engelen ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Erik Roelof Loopstra ,  Han-Kwang Nienhuys ,  Andrey Alexandrovich Nikipelov ,  Michael Jozef Mathijs Renkens ,  Franciscus Johannes Joseph Janssen ,  Borgert Kruizinga

IPC: G03F7/20 ,  G21K1/06

Abstract: A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.

公开(公告)号：US10555407B2

公开(公告)日：2020-02-04

申请号：US16388519

申请日：2019-04-18

Applicant: ASML Netherlands B.V.

Inventor： Alexey Olegovich Polyakov ,  Richard Quintanilha ,  Vadim Yevgenyevich Banine ,  Coen Adrianus Verschuren

IPC: H05G2/00 ,  G03F7/20 ,  G03F1/84 ,  H01L21/66 ,  G21K1/06

Abstract: A target structure (T) made by lithography or used in lithography is inspected by irradiating the structure at least a first time with EUV radiation (304) generated by inverse Compton scattering. Radiation (308) scattered by the target structure in reflection or transmission is detected (312) and properties of the target structure are calculated by a processor (340) based on the detected scattered radiation. The radiation may have a first wavelength in the EUV range of 0.1 nm to 125 nm. Using the same source and controlling an electron energy, the structure may be irradiated multiple times with different wavelengths within the EUV range, and/or with shorter (x-ray) wavelengths and/or with longer (UV, visible) wavelengths. By rapid switching of electron energy in the inverse Compton scattering source, irradiation at different wavelengths can be performed several times per second.

公开(公告)号：US20180368243A1

公开(公告)日：2018-12-20

申请号：US15988119

申请日：2018-05-24

Applicant: ASML Netherlands B.V.

Inventor： Petrus Wilhelmus SMORENBURG ,  Gerrit Jacobus Hendrik Brussaard ,  Vadim Yevgenyevich Banine

IPC: H05G2/00 ,  G01N21/956 ,  G03F7/20 ,  G01N21/88

CPC classification number: H05G2/008 ,  G01N21/8806 ,  G01N21/956 ,  G01N2021/95676 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  H05G2/003 ,  H05H1/24

Abstract: Methods and apparatus for generation of radiation by high harmonic generation, HHG. The apparatus comprises: a chamber for holding a vacuum, the chamber comprising a radiation input, a radiation output and an interaction region at which, in use, a medium is present, the chamber being arranged such that, in use, when driving radiation propagates through the radiation input and is incident upon the medium, the medium emits radiation via HHG, the emitted radiation propagating through the radiation output; and at least one plasma generator at the radiation input and/or the radiation output for generating a plasma volume allowing the driving radiation and emitted radiation, respectively, to propagate through the plasma volume.

公开(公告)号：US09728931B2

公开(公告)日：2017-08-08

申请号：US15035674

申请日：2014-11-27

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Johannes Antonius Gerardus Akkermans ,  Erik Loopstra ,  Wouter Joep Engelen ,  Petrus Rutgerus Bartraij ,  Teis Johan Coenen ,  Wilhelmus Patrick Elisabeth Maria Op'T Root

IPC: H01S3/09 ,  H01J1/34 ,  H05H7/08

CPC classification number: H01S3/0903 ,  H01J1/34 ,  H05H7/08 ,  H05H2007/084

Abstract: An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.

公开(公告)号：US09606445B2

公开(公告)日：2017-03-28

申请号：US14419425

申请日：2013-07-30

Applicant: ASML Netherlands B.V.

Inventor： Vadim Yevgenyevich Banine ,  Arthur Winfried Eduardus Minnaert ,  Marcel Johannus Elisabeth Hubertus Muitjens ,  Andrei Mikhailovich Yakunin ,  Luigi Scaccabarozzi ,  Hans Joerg Mallmann ,  Kurstat Bal ,  Carlo Cornelis Maria Luijten ,  Han-Kwang Nienhuys ,  Alexander Marinus Arnoldus Huijberts ,  Paulus Albertus Maria Gasseling ,  Pedro Julian Rizo Diago ,  Maarten Van Kampen ,  Nicolaas Aldegonda Jan Maria Van Aerle

IPC: G03F7/20 ,  G21K1/10

CPC classification number: G03F7/70191 ,  G03F7/70308 ,  G03F7/70575 ,  G21K1/10

Abstract: There is disclosed a lithographic apparatus provided with a spectral purity filter which may be provided in one or more of the following locations: (a) in the illumination system, (b) adjacent the patterning device, either a static location in the radiation beam or fixed for movement with the patterning device, (c) in the projection system, and (d) adjacent the substrate table. The spectral purity filter is preferably a membrane formed of polysilicon, a multilayer material, a carbon nanotube material or graphene. The membrane may be provided with a protective capping layer, and/or a thin metal transparent layer.

公开(公告)号：US20150050599A1

公开(公告)日：2015-02-19

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/26 ,  B05D1/32 ,  B05D3/10 ,  G03F7/20

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。