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公开(公告)号：US20230333485A1
公开(公告)日：2023-10-19
申请号：US18025183
申请日：2021-09-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Roy WERKMAN , David Frans Simon DECKERS
IPC: G03F7/20
CPC classification number: G03F7/70633 , G03F7/70683
Abstract: A substrate including a target structure formed in at least two layers. The target structure includes a first region having periodically repeating features in each of the layers measureable using optical metrology; and a second region having repetitions of one or more product features in each of the layers, the repetitions being sufficient for stochastic analysis to determine at least one local variation metric. The method also includes determining a correction for control of a lithographic process based on measurement of such a target structure.
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公开(公告)号：US20230333481A1
公开(公告)日：2023-10-19
申请号：US18207732
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans VAN DER LAAN , Wim Tjibbo TEL , Marinus JOCHEMSEN , Stefan HUNSCHE
IPC: G03F7/20 , G06F30/398 , H01L21/66
CPC classification number: G03F7/705 , G03F7/70616 , G06F30/398 , G03F7/70608 , G03F7/70625 , G03F7/7065 , H01L22/20 , H01L22/12
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US20230168594A1
公开(公告)日：2023-06-01
申请号：US17920014
申请日：2021-05-11
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Hermanus Adrianus DILLEN , Marc Jurian KEA , Roy WERKMAN , Weitian KOU
IPC: G03F9/00
CPC classification number: G03F9/7023 , G03F9/7088
Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.
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公开(公告)号：US20210407112A1
公开(公告)日：2021-12-30
申请号：US17289874
申请日：2019-09-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Antoine Gaston Marie KIERS , Vadim Yourievich TIMOSHKOV , Hermanus Adrianus DILLEN , Yichen ZHANG , Te-Sheng WANG , Tzu-Chao CHEN
Abstract: A method for determining an image-metric of features on a substrate, the method including: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the one or more aligned versions of the one or more further images.
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公开(公告)号：US20210397172A1
公开(公告)日：2021-12-23
申请号：US17296316
申请日：2019-10-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Abraham SLACHTER , Wim Tjibbo TEL , Daan Maurits SLOTBOOM , Vadim Yourievich TIMOSHKOV , Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN , Boris MENCHTCHIKOV , Simon Philip Spencer HASTINGS , Cyrus Emil TABERY , Maxime Philippe Frederic GENIN , Youping ZHANG , Yi ZOU , Chenxi LIN , Yana CHENG
IPC: G05B19/418
Abstract: A method for analyzing a process, the method including obtaining a multi-dimensional probability density function representing an expected distribution of values for a plurality of process parameters; obtaining a performance function relating values of the process parameters to a performance metric of the process; and using the performance function to map the probability density function to a performance probability function having the process parameters as arguments.
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Patent Agency Ranking
公开(公告)号：US20210080838A1
公开(公告)日：2021-03-18
申请号：US16966596
申请日：2019-01-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Marc Jurian KEA , Roy ANUNCIADO
IPC: G03F7/20
Abstract: A method for determining adjustment to a patterning process. The method includes obtaining a probability density function of a parameter related to a feature of a substrate subject to the patterning process based on measurements of the parameter, determining an asymmetry of the probability density function, and determining an adjustment to the patterning process based on the asymmetry of the probability density function of the parameter so as to reduce a probability of the feature having a parameter value that falls outside a range between threshold values of the parameter.
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公开(公告)号：US20210080837A1
公开(公告)日：2021-03-18
申请号：US16954384
申请日：2018-11-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Manouk RIJPSTRA , Cornelis Johannes Henricus LAMBREGTS , Wim Tjibbo TEL , Sarathi ROY , Cédric Désiré GROUWSTRA , Chi-Fei NIEN , Weitian KOU , Chang-Wei CHEN , Pieter Gerardus Jacobus SMORENBERG
IPC: G03F7/20 , G05B19/404
Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.
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公开(公告)号：US20200371441A1
公开(公告)日：2020-11-26
申请号：US16959736
申请日：2018-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Yichen ZHANG , Sarathi ROY
Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.
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49.发明申请公开(公告)号：US20190137889A1
公开(公告)日：2019-05-09
申请号：US16087338
申请日：2017-03-14
Applicant: ASML NETHERLANDS B.V.
Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including computing a multi-variable cost function. The multi-variable cost function represents an interlayer characteristic, the interlayer characteristic being a function of a plurality of design variables that represent one or more characteristics of the lithographic process. The method further includes reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and computing the multi-variable cost function with the adjusted one or more design variables, until a certain termination condition is satisfied.
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公开(公告)号：US20180284623A1
公开(公告)日：2018-10-04
申请号：US15763376
申请日：2016-09-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo TEL , Marinus JOCHEMSEN
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70508 , G03F7/70683
Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.
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