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41.
公开(公告)号:AU2003295233A1
公开(公告)日:2004-07-29
申请号:AU2003295233
申请日:2003-12-25
Applicant: CANON KK
Inventor: IWASAKI TATSUYA
Abstract: An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.
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公开(公告)号:AT249093T
公开(公告)日:2003-09-15
申请号:AT99101106
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AU700998B2
公开(公告)日:1999-01-14
申请号:AU2831895
申请日:1995-08-01
Applicant: CANON KK
Inventor: IWASAKI TATSUYA , YAMANOBE MASATO , TSUKAMOTO TAKEO , YAMAMOTO KEISUKE , HAMAMOTO YASUHIRO
Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
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公开(公告)号:AU6366498A
公开(公告)日:1998-07-16
申请号:AU6366498
申请日:1998-04-27
Applicant: CANON KK
Inventor: NOMURA ICHIRO , YAMANOBE MASATO , SUZUKI HIDETOSHI , TAKEDA TOSHIHIKO , IWASAKI TATSUYA
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公开(公告)号:AU681622B2
公开(公告)日:1997-09-04
申请号:AU5927794
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AT155284T
公开(公告)日:1997-07-15
申请号:AT94105255
申请日:1994-04-05
Applicant: CANON KK
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公开(公告)号:AU2831895A
公开(公告)日:1996-02-15
申请号:AU2831895
申请日:1995-08-01
Applicant: CANON KK
Inventor: IWASAKI TATSUYA , YAMANOBE MASATO , TSUKAMOTO TAKEO , YAMAMOTO KEISUKE , HAMAMOTO YASUHIRO
Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
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公开(公告)号:AU2495595A
公开(公告)日:1996-01-25
申请号:AU2495595
申请日:1995-07-12
Applicant: CANON KK
Inventor: IKEDA SOTOMITSU , YAMANOBE MASATO , KAWADE HISAAKI , OHNISHI TOSHIKAZU , IWASAKI TATSUYA
Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.
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公开(公告)号:CA2295411A1
公开(公告)日:1995-06-29
申请号:CA2295411
申请日:1994-06-22
Applicant: CANON KK
Inventor: IWASAKI TATSUYA , YAMANOBE MASATO , TAKEDA TOSHIHIKO , SUZUKI HIDETOSHI , NOMURA ICHIRO
IPC: H01J1/308
Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.
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公开(公告)号:CA2585063C
公开(公告)日:2013-01-15
申请号:CA2585063
申请日:2005-11-09
Applicant: CANON KK , TOKYO INST TECH
Inventor: DEN TORU , IWASAKI TATSUYA , HOSONO HIDEO , KAMIYA TOSHIO , NOMURA KENJI
IPC: H01L33/00 , B41J2/44 , B41J2/45 , B41J2/455 , G03G15/04 , G09F9/30 , H01L27/32 , H01L29/786 , H01L51/50 , H01L51/52 , H05B33/10
Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer (78) existing between first and second electrodes (77, 79) and a field effect transistor, of which the active layer (72) is an amorphous oxide.
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