PROCESS OF INFORMATION TRANSMISSION IN OPTICAL CIRCUIT DEVICE AND OPTICAL CIRCUIT DEVICE THEREFOR

    公开(公告)号:AU2003295233A1

    公开(公告)日:2004-07-29

    申请号:AU2003295233

    申请日:2003-12-25

    Applicant: CANON KK

    Inventor: IWASAKI TATSUYA

    Abstract: An information transmission process is disclosed in which information is transmitted between a signal-emitting port for emitting an optical signal and plural signal-receiving ports through a light transmissive medium in an optical circuit device. The process comprises a first step of transmitting a first information from the signal-emitting port by emitting light in a first emission angle range to transmit first information to at least one of the signal-receiving ports, and a second step, after the first step, of transmitting second information from the signal-emitting port by emitting light in a second emission angle range different from the first emission angle range to transmit second information to at least one of the signal-receiving ports.

    Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof

    公开(公告)号:AU700998B2

    公开(公告)日:1999-01-14

    申请号:AU2831895

    申请日:1995-08-01

    Applicant: CANON KK

    Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

    Electron-emitting device, electron source and image-forming apparatus using the device, and manufacture methods thereof

    公开(公告)号:AU2831895A

    公开(公告)日:1996-02-15

    申请号:AU2831895

    申请日:1995-08-01

    Applicant: CANON KK

    Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.

    Apparatus for manufacturing electron source and image forming apparatus

    公开(公告)号:AU2495595A

    公开(公告)日:1996-01-25

    申请号:AU2495595

    申请日:1995-07-12

    Applicant: CANON KK

    Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.

    ELECTRON BEAM APPARATUS AND IMAGE-FORMING APPARATUS

    公开(公告)号:CA2295411A1

    公开(公告)日:1995-06-29

    申请号:CA2295411

    申请日:1994-06-22

    Applicant: CANON KK

    Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.

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