公开(公告)号：JP2009202262A

公开(公告)日：2009-09-10

申请号：JP2008045640

申请日：2008-02-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMOTO KAZUO ,  SHINODA TOMOTAKA

IPC: B24B37/00 ,  C09K3/14

Abstract: PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing having excellent polishing performance for metal films such as copper, barrier metal films such as tantalum, and insulation films, and which can be repeatedly used through a simple step; a method of manufacturing an aqueous dispersing element for chemical mechanical polishing; and a chemical mechanical polishing method. SOLUTION: The aqueous dispersing element for chemical mechanical polishing used for polishing the wiring layer composed of copper or copper alloy disposed on the electrooptic display substrate contains (A) abrasive particles; (B) organic acid; and (C) copper ions. The ratio of a long diameter Rmax of the abrasive particles (A) to their short diameter Rmin, namely Rmax/Rmin, is 1.0 to 1.5. The ingredient (C) is 5.0×10 4 to 2.0×10 5 ppm. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于化学机械抛光的水性分散元件，其具有对诸如铜的金属膜，诸如钽的阻挡金属膜和绝缘膜的优异的抛光性能，并且可以通过简单的步骤重复使用 ; 一种制造用于化学机械抛光的水性分散元件的方法; 和化学机械抛光方法。 解决方案：用于抛光布置在电光显示基板上的由铜或铜合金构成的布线层的用于化学机械抛光的水性分散元件包含（A）磨料颗粒; （B）有机酸; 和（C）铜离子。 磨粒（A）的长径Rmax与其短径Rmin的比值即Rmax / Rmin为1.0〜1.5。 成分（C）为5.0×10 4 至2.0×10 5ppm。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2007088437A

公开(公告)日：2007-04-05

申请号：JP2006221998

申请日：2006-08-16

Applicant: Ibiden Co Ltd ,  Jsr Corp ,  Jsr株式会社 ,  Okutekku:Kk ,  Tokyo Electron Ltd ,  イビデン株式会社 ,  東京エレクトロン株式会社 ,  株式会社オクテック

Inventor： OKUMURA KATSUYA ,  YAMADA KINJI ,  SHINODA TOMOTAKA ,  O DOUKAI ,  KITANO TAKAHIRO ,  YAMANISHI YOSHIKI ,  HARADA MUNEO ,  KAWAGUCHI TATSUZO ,  HIROTA YOSHIHIRO ,  SHIYOUDEN KENJI

IPC: H01G4/33

CPC classification number: H01G4/1209 ,  H01L21/31691 ,  H01L27/101 ,  H01L28/56

Abstract: PROBLEM TO BE SOLVED: To secure high film flatness by forming a first dielectric thin film and a second dielectric thin film that is provided by applying a dielectric-forming composition onto the first dielectric thin film so that a dense layer is formed on the surface of the first dielectric thin film. SOLUTION: A dielectric-forming composition containing an organic solvent and at least one compound selected from the group consisting of a metal alkoxide including a metal species A and a metal species B, a metal carboxylate, a metal complex, and a metal hydroxide is applied onto a dielectric thin film 31 having an ABOx-type perovskite crystalline structure with voids of 10 nm or more, and is heated to form a dielectric thin film 32, thereby obtaining a dielectric film 3 having an ABOx-type perovskite crystalline structure. The dielectric-forming composition fills the voids 42 in the dielectric thin film 31 so that the voids in the surface of the dielectric thin film 31 are filled with the dielectric thin film 32, thereby obtaining a dense film in the region. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了通过形成第一电介质薄膜和第二电介质薄膜来确保高的薄膜平整度，该第一电介质薄膜和第二电介质薄膜是通过在第一介电薄膜上施加电介质形成组合物而形成致密层而形成的， 第一电介质薄膜的表面。 解决方案：一种电介质形成组合物，其含有有机溶剂和至少一种选自包括金属物质A和金属物质B的金属醇盐，金属羧酸盐，金属络合物和金属的化合物 将氢氧化物施加到具有10nm以上的空隙的ABOx型钙钛矿晶体结构的电介质薄膜31上，并加热形成电介质薄膜32，得到具有ABOx型钙钛矿结晶结构的电介质膜3 。 电介质形成组合物填充电介质薄膜31中的空隙42，使得电介质薄膜31的表面中的空隙填充有电介质薄膜32，从而在该区域中获得致密膜。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007059583A

公开(公告)日：2007-03-08

申请号：JP2005242473

申请日：2005-08-24

Applicant: Jsr Corp ,  Jsr株式会社 ,  Okutekku:Kk ,  Tokyo Electron Ltd ,  東京エレクトロン株式会社 ,  株式会社オクテック

Inventor： SHINODA TOMOTAKA ,  YAMADA KINJI ,  KITANO TAKAHIRO ,  YAMANISHI YOSHIKI ,  HARADA MUNEO ,  KAWAGUCHI TATSUZO ,  HIROTA YOSHIHIRO ,  OKUMURA KATSUYA

IPC: H01L21/8246 ,  H01G4/12 ,  H01G4/33 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide an electrode mechanism in a dielectric material film capacitor which assures close contact between a lower electrode and a layer under the lower electrode and is not easily oxidized and thermally stable.
SOLUTION: The dielectric material film capacitor 20 comprises a lower electrode 22 in the thickness of 10 to 100 nm formed of a material including platinum, a dielectric material film 24 formed on the upper part of the lower electrode 22 and including an oxide having the type ABOx peroviskite structure, and an upper electrode 26 provided on the upper part of the dielectric material film 24.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种电介质材料薄膜电容器中的电极机构，其确保下电极和下电极之间的层之间的紧密接触，并且不容易氧化和热稳定。 解决方案：介电材料膜电容器20包括由包括铂的材料形成的厚度为10至100nm的下电极22，形成在下电极22的上部并且包括氧化物的介电材料膜24 具有类型ABOx peroviskite结构，以及设置在介电材料膜24的上部上的上电极26.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005343727A

公开(公告)日：2005-12-15

申请号：JP2004164101

申请日：2004-06-02

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： RYU KYOICHIRO ,  TAKAHASHI MASAYUKI ,  YAMADA KINJI ,  SHINODA TOMOTAKA

IPC: C04B35/622 ,  C04B35/46 ,  H01B3/12

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for forming a dielectric film which enables easy thickening of the film. SOLUTION: The composition for forming the dielectric film contains (A) a particle having an ABOx type crystalline structure (wherein A is at least one metal species chosen from Li, Na, Ca, Sr, Ba and La; and B is at least one metal species chosen from Ti, Zr, Ta and Nb), (B) at least one metal compound, (C) at least one hydrophilic organic solvent and (D) an organic polymer. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：获得能够容易地使薄膜变厚的电介质膜形成用组合物。 解决方案：用于形成电介质膜的组合物含有（A）具有ABOx型结晶结构的颗粒（其中A是选自Li，Na，Ca，Sr，Ba和La中的至少一种金属物质; B是 至少一种选自Ti，Zr，Ta和Nb的金属物质），（B）至少一种金属化合物，（C）至少一种亲水性有机溶剂和（D）有机聚合物。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005247660A

公开(公告)日：2005-09-15

申请号：JP2004062883

申请日：2004-03-05

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHINODA TOMOTAKA ,  YAMADA KINJI ,  TAKAHASHI MASAYUKI ,  RYU KYOICHIRO

IPC: C04B35/00 ,  C04B35/495 ,  C23C18/12 ,  H01B3/12

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a dielectric film for forming the dielectric film having excellent dielectric characteristics and leak characteristics and a method for manufacturing the same. SOLUTION: The composition for forming the dielectric film includes (A) particles having a crystal structure of an ABOx type wherein a metal kind A is at least one kind of metal selected from Li, Na, Ca, Sr, Ba, and La and a metal kind B is at least one kind of metal selected from Ti, Zr, Ta and Nb, (B) at least one kind of a compound selected from a metal alkoxide, a metal carboxylate, metal complex and metal hydroxide, and (C) an organic solvent. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于形成具有优异的介电特性和泄漏特性的电介质膜的电介质膜的组合物及其制造方法。 解决方案：用于形成电介质膜的组合物包括（A）具有ABOx型晶体结构的颗粒，其中金属种类A是选自Li，Na，Ca，Sr，Ba和 La和金属B族是选自Ti，Zr，Ta和Nb中的至少一种金属，（B）至少一种选自金属醇盐，金属羧酸盐，金属络合物和金属氢氧化物的化合物，以及 （C）有机溶剂。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003068730A

公开(公告)日：2003-03-07

申请号：JP2001256557

申请日：2001-08-27

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： IKEDA NORIHIKO ,  SHINODA TOMOTAKA ,  KOMATSU SATOSHI ,  YAMADA KINJI

IPC: H01L21/8247 ,  H01B3/12 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide coating solution to form a ferro-electric thin film on a substrate.
SOLUTION: The coating solution for forming ferro-electric thin film, which contains (A) compound containing boron atoms and (B) organo-metallic compound having at least one selected from Ta, Bi, Sr, Nb, Pb, Zr and Ti as a constituent element.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供涂布溶液以在基材上形成铁电薄膜。 解决方案：含有（A）含有硼原子的化合物和（B）具有选自Ta，Bi，Sr，Nb，Pb，Zr和Ti中的至少一种的有机金属化合物的铁电薄膜用涂布溶液， 构成要素。

公开(公告)号：JP2001240802A

公开(公告)日：2001-09-04

申请号：JP2000052020

申请日：2000-02-28

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  TAMAKI KENTARO ,  SHINODA TOMOTAKA ,  YAMADA KINJI

IPC: C08K5/00 ,  C08K5/07 ,  C08K5/14 ,  C08K5/23 ,  C08L83/04 ,  C09D183/04 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a composition for film formation capable of forming a coating film having uniform thickness, excellent in mechanical strength, clack resistance, resistance to CMP(chemical Mechanical Polishing) and low in dielectric constant as a layer insulation material of a semiconductor element. SOLUTION: This composition for film formation includes (A) a hydrolyzate and/or a condensate of one or more kind of compounds selected from (A-1) R1aSi(OR2)4-a, (e.g. phenyltrimethoxy silane or the like), (A-2) R3bSi(OR4)4-b, (e.g. tetramethoxy silane or the like), (A-3) R5c(R6O)3-cSi-(R9)e-Si(OR7)3-dR8d, (e.g. hexamethoxydisiloxane or the like), and (B) a radical generator and/or a triazene compound having two or more -N=N-NR10R11 groups (e.g. bis(3,3- dimethyl-triazenylphenyl) ether or the like).

公开(公告)号：JP2000208505A

公开(公告)日：2000-07-28

申请号：JP246399

申请日：1999-01-08

Applicant: JSR CORP

Inventor： SHINODA TOMOTAKA ,  KUROSAWA TAKAHIKO ,  YAMADA KINJI ,  TSUNODA MAYUMI ,  MATSUBARA MINORU

IPC: H01L21/316

Abstract: PROBLEM TO BE SOLVED: To improve the balance of uniformity, the dielectric constant characteristic and preservation stability of an application film and adhesion property against a base by continuously or intermittently adding water to specified compound, the chelate compound of specified metal and mixture containing organic solvent. SOLUTION: A composition for forming film is a compound shown by R1nSi(OR2)4-n. In a formula, R1 and R2 can be the same or different and they show a 1-5C alkyl group or a 6-20C aryl group. Then, (n) is the integer of 0-2 or the composition is the chelate compound of metal, which is shown by R3tM (OR4)s-t. In the formula, R3 is chelate solution, M is a metallic atom, R4 is the 2-5C alkyl group or the 6-20C aryl group, (s) is the valence of metal M and (t) is the integer of 1-s. The mixture containing an organic solvent and water are continuously or intermittently added to the compounds.

公开(公告)号：JPH11323129A

公开(公告)日：1999-11-26

申请号：JP15542898

申请日：1998-05-21

Applicant: JSR CORP

Inventor： MATSUBARA MINORU ,  INOUE YASUTAKE ,  TSUNODA MAYUMI ,  GOTO KOHEI ,  KUROSAWA TAKAHIKO ,  SHINODA TOMOTAKA ,  YAMADA KINJI

IPC: C08K5/057 ,  C08K5/54 ,  C08K5/56 ,  C08L79/08 ,  C08L83/04

Abstract: PROBLEM TO BE SOLVED: To provide a thermosetting resin composition excellent in storage stability in the form of a solution, capable of being cured without cracking, and capable of forming a cured product excellent in adhesion to various substrates, heat resistance, wet-heat resistance, electrical insulation properties, etc. SOLUTION: This composition comprises (A) a hydrolyzate of a hydrolyzable organosilane compound and/or a partial condensate thereof, and (B) a polyamic acid being a polyimide having carboxyl groups as polymer side chains and/or a precursor thereof, and desirably, (C) a chelate compound of a metal selected from the group consisting of zirconium, titanium and aluminum and/or an alkoxide compound of the same metal.

公开(公告)号：JP2015038861A

公开(公告)日：2015-02-26

申请号：JP2014130238

申请日：2014-06-25

Applicant: Jsr株式会社 ,  Jsr Corp ,  Jsr株式会社

Inventor： YAMADA KINJI ,  LEE HOJIN ,  KIKUCHI TOSHIMITSU ,  OGAWA MASAKI ,  HIRASAWA HIROYUKI ,  SHINODA TOMOTAKA

IPC: H01M4/13 ,  H01M4/139 ,  H01M4/62

CPC classification number: Y02P70/54

Abstract: 【課題】活物質層の電気伝導度が高く、高い起電力および優れた充放電特性を発揮することができるとともに、充放電の繰り返しによってもこれらの特性が劣化することのない電極を与える、固体電解質を用いる蓄電デバイスに好適に適用することのできる電極用スラリーを提供すること。【解決手段】本発明に係る蓄電デバイス電極用スラリーは、(A)電解質粒子と(B)活物質粒子と(C)分散媒体とを含有する蓄電デバイス電極用スラリーであって、前記蓄電デバイス電極用スラリーについてレーザー回折法によって測定した粒径分布において、0.01μm以上100μm未満の粒径区間に全粒子の80容積%以上が存在し、0.01μm以上50μm未満の粒径区間に全粒子の60容積%以上98容積%以下が存在し、50μm以上100μm未満の粒径区間に全粒子の1容積%以上35容積%以下が存在することを特徴とする。【選択図】なし

Abstract translation: 要解决的问题：为了提供可适用于使用固体电解质的蓄电装置的电极用浆料，能够实现活性物质层的高导电性，高电动势和优异的电荷 并且能够输送布置成使得即使重复进行充放电也不会使这些特性恶化的电极。解决方案：根据本发明的用于蓄电装置电极的浆料包含（A）电解质颗粒（B ）活性物质颗粒，和（C）分散介质。 在通过激光衍射测量的用于蓄电装置电极的浆料的粒径分布中，所有颗粒的80体积％以上的粒径存在于0.01至小于100μm的粒径区域中，60-98体积％ 所有颗粒的粒径存在于0.01至小于50μm的粒径范围内，并且所有颗粒的1-35体积％存在于50至小于100μm的粒径区域中。