1.
    发明专利
    未知

    公开(公告)号:DE69716218T2

    公开(公告)日:2003-04-17

    申请号:DE69716218

    申请日:1997-11-20

    Applicant: JSR CORP

    Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

    2.
    发明专利
    未知

    公开(公告)号:DE69822918D1

    公开(公告)日:2004-05-13

    申请号:DE69822918

    申请日:1998-04-14

    Applicant: JSR CORP

    Abstract: Electronic parts and a process for manufacturing the electronic parts are provided. The electronic parts comprise an electric insulating material exhibiting a high heat resistance and low dielectric constant as a structural component. The electric insulating material is formed of a polyimide containing a recurring unit represented by the following general formula (1).

    3.
    发明专利
    未知

    公开(公告)号:DE69716218D1

    公开(公告)日:2002-11-14

    申请号:DE69716218

    申请日:1997-11-20

    Applicant: JSR CORP

    Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

    4.
    发明专利
    未知

    公开(公告)号:DE69822918T2

    公开(公告)日:2005-03-31

    申请号:DE69822918

    申请日:1998-04-14

    Applicant: JSR CORP

    Abstract: Electronic parts and a process for manufacturing the electronic parts are provided. The electronic parts comprise an electric insulating material exhibiting a high heat resistance and low dielectric constant as a structural component. The electric insulating material is formed of a polyimide containing a recurring unit represented by the following general formula (1).

    MANUFACTURE OF COMPOSITION FOR FORMING FILM

    公开(公告)号:JP2000208505A

    公开(公告)日:2000-07-28

    申请号:JP246399

    申请日:1999-01-08

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To improve the balance of uniformity, the dielectric constant characteristic and preservation stability of an application film and adhesion property against a base by continuously or intermittently adding water to specified compound, the chelate compound of specified metal and mixture containing organic solvent. SOLUTION: A composition for forming film is a compound shown by R1nSi(OR2)4-n. In a formula, R1 and R2 can be the same or different and they show a 1-5C alkyl group or a 6-20C aryl group. Then, (n) is the integer of 0-2 or the composition is the chelate compound of metal, which is shown by R3tM (OR4)s-t. In the formula, R3 is chelate solution, M is a metallic atom, R4 is the 2-5C alkyl group or the 6-20C aryl group, (s) is the valence of metal M and (t) is the integer of 1-s. The mixture containing an organic solvent and water are continuously or intermittently added to the compounds.

    THERMOSETTING RESIN COMPOSITION AND CURED PRODUCT THEREOF

    公开(公告)号:JPH11323129A

    公开(公告)日:1999-11-26

    申请号:JP15542898

    申请日:1998-05-21

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a thermosetting resin composition excellent in storage stability in the form of a solution, capable of being cured without cracking, and capable of forming a cured product excellent in adhesion to various substrates, heat resistance, wet-heat resistance, electrical insulation properties, etc. SOLUTION: This composition comprises (A) a hydrolyzate of a hydrolyzable organosilane compound and/or a partial condensate thereof, and (B) a polyamic acid being a polyimide having carboxyl groups as polymer side chains and/or a precursor thereof, and desirably, (C) a chelate compound of a metal selected from the group consisting of zirconium, titanium and aluminum and/or an alkoxide compound of the same metal.

    AROMATIC BIS(ETHER ACID ANHYDRIDE), POLYAMIC ACID AND POLYIMIDE

    公开(公告)号:JPH11116675A

    公开(公告)日:1999-04-27

    申请号:JP28241597

    申请日:1997-10-15

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain the subject new acid anhydride capable of giving polyimides excellent in both heat resistance and low dielectric property and useful as a starting material for producing the polyimides by introducing specific phthalic anhydride group-containing groups at the 9-position of fluorene. SOLUTION: A compound of formula I (R is a 1-6C alkyl, a 6-14C monocyclic or a condensed polycyclic aromatic group; R is H, R ). For example, 9, 9- bis[4-(3,4-dicarboxyphenoxy)-3-phenylphenyl]fluorene dianhydride. The compound of formula I is obtained by condensing a compound of formula II with a compound of formula III (R is a 1-8C alkyl, a 6-20 monocyclic or a condensed polycyclic aromatic group), hydrolyzing the obtained aromatic bisimide compound, acidifying the reaction product, and subsequently dehydrating the obtained tetracarboxylic acid.

    THERMOSETTING RESIN COMPOSITION
    8.
    发明专利

    公开(公告)号:JPH10147713A

    公开(公告)日:1998-06-02

    申请号:JP32336196

    申请日:1996-11-20

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a thermosetting resin compsn. excellent in the storability in the form of a soln. thereof and capable of forming a cured product excellent in adhesion to various bases, thermal resistance, moist heat resistance and electrical insulating properties without causing cracks in the course of the curing. SOLUTION: This compsn. comprises (A) a hydrolyzate of a hydrolyzable organosilane compd. and/or partial condensate thereof, (B) a polyamic acid having a hydrolyzable silyl group and/or a polyimide having a hydrolyzable silyl group and (C) a chelating compd. or an alkoxide compd. of a metal selected from among zirconium, titanium and aluminum.

    POLYAMIC ACID AND POLYIMIDE
    9.
    发明专利

    公开(公告)号:JPH10120783A

    公开(公告)日:1998-05-12

    申请号:JP29123296

    申请日:1996-10-15

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a polyamic acid, capable of giving a polyimide low in dielectricity and excellent in heat resistance and solubility in various kinds of solvents by adding specific repeating units and adjusting the logarithmic viscosity within a specific range. SOLUTION: This polyamic acid contains repeating units of formula I A is bis(trifluoromethyl)methylene, a group of formula II [(b) is 1-3], a group of formula III [R , R are each a halogen, a 1-6C (halogenated) alkyl, a 5-12C (halogenated) cyclloalkyl, a 1-6C (halogenated) alkoxy; X is a single bond, O; (c) is 0-4]; R , R are each R ; (a) is 0-3}, and has a logarithmic viscosity of 0.1-4dl/g (solvent: N, N-dimethylformamide, at 30 deg.C, a concentraction of 0.5g/dl). The compound is obtained by polycondensing 9,9-bis[4-(4-aminophenoxy) phenyl]fluorene with a compound of formula IV.

    FILM-FORMING COMPOSITION, MANUFACTURE THEREOF AND MATERIAL FOR LAYER INSULATING FILM

    公开(公告)号:JP2000256621A

    公开(公告)日:2000-09-19

    申请号:JP15867399

    申请日:1999-06-04

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain a composition which is excellent in uniformity of a coated film, dielectric characteristic, storage stability, O plasma ashing resistance, adhesion to an underlying layer and the like by including an alkoxysilane compound, a metal chelate compound, a propylene glycol monoalkyl ether and a β-diketone. SOLUTION: The composition comprises a hydrolyzate of a compound of the formula, R1nSi(OR2)4-n and/or its partial condensate, a metal chelate compound of the formula, R3tM(OR4)s-t, a propylene glycol monoalkyl ether and a β-diketone, in which it is preferred that the content of Na is 20 ppb or below, the content of β-diketone is not lower than 1 wt.%, and the content of an alcohol having a boiling point of 100 deg.C or below is not higher than 20 wt.%. In the formula, R1-2 represents 1-5C alkyl or 6-20C aryl; n is 0 to 2; R3 represents a chelating agent; M is a metal atom, preferably Ti, Zr or Al; R4 represents 2-5C alkyl or 6-20C aryl; s is a valence of M; and t is 1 to s. This composition is useful as a layer insulating film such as for semiconductor devices.

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