公开(公告)号：JP2007106717A

公开(公告)日：2007-04-26

申请号：JP2005300865

申请日：2005-10-14

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YONEDA EIJI ,  SHIMOKAWA TSUTOMU

IPC: C07C309/14 ,  C07C19/07 ,  C07C381/12 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a basic compound suitable as an acid diffusion controller in a positive-type radiation-sensitive resin composition useful for fine processing in which every kind of radiation, such as far ultraviolet rays, an electron beam, and X rays, is used. SOLUTION: This basic compound comprises an onium salt expressed by general formula (1) (at least one of Z 1 and Z 2 is F or a 1-10C straight-chain or branched-chain perfluoroalkyl; R 1 s may be identical to or different from each other and are each an alkyl or a cycloalkyl, or two of R 1 s and N bonded thereto together form a ring; A is a bivalent organic group or a single bond; and M + is a sulfonium cation, an iodonium cation or the like). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种适用于酸性扩散控制剂的碱性化合物，用于精细加工的正型辐射敏感性树脂组合物中，其中每种辐射如远紫外线，电子束， 和X射线。 解决方案：该碱性化合物包括由通式（1）表示的鎓盐（Z 1 和Z 2 中的至少一个为F或1-10C 直链或支链全氟烷基; R 1彼此可以相同或不同，并且各自为烷基或环烷基，或两个R 1 SP 和N键合在一起形成环; A是二价有机基团或单键; M 是锍阳离子，碘鎓阳离子等）。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005340720A

公开(公告)日：2005-12-08

申请号：JP2004160926

申请日：2004-05-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  EGAWA HIROMI ,  TOTSUKA KEIKO ,  SUGITA HIKARI ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming pattern by which the pattern of a silicon oxide can be formed by using an oxygen gas while controlling the pattern intervals of a fine pattern containing silicon, and to provide a method of manufacturing semiconductor device using the method. SOLUTION: The method of forming pattern includes a step of forming a resin coating film 4 on a substrate 1 provided with the pattern 2 containing the silicon, a step of heating the substrate 1 on which the resin coating film 4 is formed, and a step of removing the resin coating film 4 by using the oxygen gas and, at the same time, oxidizing the pattern 2. The method of manufacturing semiconductor device includes the method of forming pattern. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种形成图案的方法，通过使用氧气可以形成氧化硅的图案，同时控制含有硅的精细图案的图案间隔，并提供制造方法 半导体器件采用该方法。 解决方案：形成图案的方法包括在设置有包含硅的图案2的基板1上形成树脂涂膜4的步骤，对其上形成有树脂涂膜4的基板1进行加热的步骤， 以及通过使用氧气去除树脂被覆膜4并同时氧化图案2的步骤。半导体器件的制造方法包括形成图案的方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005084621A

公开(公告)日：2005-03-31

申请号：JP2003319793

申请日：2003-09-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  TANAKA MASATO ,  NOMURA NAKAATSU ,  SUGIE NORIHIKO ,  SHIMOKAWA TSUTOMU ,  HASHIGUCHI YUICHI ,  OKANIWA MOTOKI ,  KONNO KEIJI

IPC: G03F7/11 ,  C09D165/00 ,  C09K3/00 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition capable of giving a resist pattern excellent in resolution, accuracy, etc., and to provide a method for producing an antireflection film. SOLUTION: The antireflection film forming composition is prepared such that it contains a polymer (a) which is a ring-opened polymer of at least one derivative shown by formula (1) [where A and D each denote H or a hydrocarbon group; and B and C each denote H, a hydrocarbon group, halogen, a halogen substituted hydrocarbon group, -(CH 2 ) n COOR 1 , -(CH 2 ) n COR 2 , -(CH 2 ) n OCOR 3 , -(CH 2 )CN, -(CH 2 ) n CONR 4 R 5 , -(CH 2 ) n OR 6 , -(CH 2 )R 7 or -(CH 2 ) n M, or B and C together form -CO-O-CO- or -CO-NR 8 -CO-] or a polymer which is copolymer of the derivative and another copolymerizable monomer and a polymer (b) having at least one aromatic ring structure. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够提供分辨率，精度等优异的抗蚀剂图案的抗反射膜形成组合物，并提供一种抗反射膜的制造方法。 ＆lt; P＆gt;解决方案：制备抗反射膜形成组合物，使其含有聚合物（a），其为至少一种式（1）所示的衍生物的开环聚合物[其中A和D各自表示H或烃 组; 和B和C各自表示H，烃基，卤素，卤素取代的烃基， - （CH 2 ） COOR 1， - （CH 2 ） 2 OCOR 3 ， - （CH 2 ）CN， - （CH 2 ）< / SP> R 5 ， - （CH 2 ）或 6， - （CH < 或者 - （CH 2 ），或B和C一起形成-CO-O-CO- 或-CO-NR 8-CO-]或作为衍生物与另一种可共聚单体的共聚物的聚合物和具有至少一个芳环结构的聚合物（b）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004346032A

公开(公告)日：2004-12-09

申请号：JP2003146305

申请日：2003-05-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  C07C69/753 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an acid-dissociable group-containing compound applicable to radiation having ≤193 nm wavelength, excellent in dry etching, suitable as a chemical amplification type resist having high contrast and useful as additive component, etc., of a radiation-sensitive resin composition and to provide the radiation-sensitive resin composition. SOLUTION: The acid-dissociable group-containing compound has a group represented by general formula (α) (wherein R 1 is a 2-20C monovalent acid-dissociable group; R 2 and R 3 are mutually independently a hydrogen atom or fluorine atom; R 4 is an oxygen atom or a sulfur atom) and a cyclic hydrocarbon group. The radiation-sensitive resin composition comprises (A) a resin becoming readily alkali-soluble by action of an acid or an alkali-soluble resin, (B) a radio-sensitive acid generating agent and (C) the acid-dissociable group-containing compound. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004123793A

公开(公告)日：2004-04-22

申请号：JP2002285855

申请日：2002-09-30

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： CHIBA TAKASHI ,  IWAZAWA HARUO ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C07F7/18 ,  C08G77/50 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a new polysiloxane which exhibits a high transparency at a wavelength of 193 nm or less and is excellent in dry etching resistance, especially in environmental resistance; a new silicon-containing compound useful e.g. as a raw material for synthesizing the polysiloxane; and a radiation-sensitive resin composition containing the polysiloxane. SOLUTION: The silicon-containing compound is represented by formula (1) (wherein X 1 is an optionally substituted 2-20C divalent hydrocarbon group; R 1 and R 2 are each H, a halogen, an alkoxy group or an optionally halogenated hydrocarbon group, provided each of two or three R 1 's are a halogen or an alkoxy group; and m and n are each 0, 1, 2 or 3, provided (m+n) COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003330196A

公开(公告)日：2003-11-19

申请号：JP2003056564

申请日：2003-03-04

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  CHIBA TAKASHI ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F36/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having high transparency at ≤193 nm wavelength and excellent basic physical properties as a resist such as resolution or the like and suitable as a chemically amplifying resist.
SOLUTION: The radiation-sensitive resin composition contains (A) an acid dissociable group-containing resin such as a resin having a repeating unit expressed by formula (a-1) and/or a repeating unit expressed by formula (a-2) and a repeating unit expressed by formula (b-1) and/or a repeating unit expressed by formula (b-2) and (B) a radiation-sensitive acid generating agent which generates an acid, typified as trifluoromethanesulfonic acid, nonafluoro-n- butanesulfonic acid, 2-(2-norbornyl)-1,1,2,2-tetrafluoroethanesulfonic acid, or the like.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供具有在193nm波长下的高透明度和优异的基本物理性能的光敏树脂组合物作为诸如分辨率等的抗蚀剂，并且适合作为化学放大抗蚀剂。 解决方案：辐射敏感性树脂组合物含有（A）含酸解离基团的树脂，例如具有由式（a-1）表示的重复单元的树脂和/或由式（a- 2）和由式（b-1）表示的重复单元和/或由式（b-2）和（B）表示的重复单元，产生以三氟甲磺酸为代表的酸的辐射敏感性酸产生剂， 壬-2-磺酸，2-（2-降冰片基）-1,1,2,2-四氟乙磺酸等。 版权所有（C）2004，JPO

公开(公告)号：JP2002105086A

公开(公告)日：2002-04-10

申请号：JP2000291089

申请日：2000-09-25

Applicant: JSR CORP

Inventor： IWAZAWA HARUO ,  SHIMOKAWA TSUTOMU

IPC: C07F7/08 ,  C07F7/18 ,  C07F7/21 ,  C08G77/50

Abstract: PROBLEM TO BE SOLVED: To obtain a new silicon-containing alicyclic compound useful as a raw material, etc., for a polysiloxane-based resin used for a chemical amplifying type resist excellent in dry etching resistance, transparency, resolution, developability, etc., for radiations. SOLUTION: This silicon-organic alicyclic compound has a structure in which t-butoxycarbonyl group and a (substituted) silyl group are bound to bicyclo[2.2.1]heptane ring or a ring in which the 2-4 bicyclo[2.2.1]heptane rings are condensed and is represented by 2-trimethoxysilyl-5-t- butoxycarbonylbicyclo[2.2.1]heptane, 2-methyldiethoxysilyl-5-t- butoxycarbonylbicyclo[2.2.1]heptane, 3-trimethoxysilyl-8-t- butoxycarbonyltetracyclo[4.4.0.12,517,10]dodecane or a cyclic polysiloxane derivative thereof, etc.

公开(公告)号：JP2002082438A

公开(公告)日：2002-03-22

申请号：JP2000273962

申请日：2000-09-08

Applicant: JSR CORP

Inventor： MURATA KIYOSHI ,  YAMAMOTO MASASHI ,  SOYANO AKIMASA ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08K5/00 ,  C08L45/00 ,  C08L101/08 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having high transparency to radiation, excellent in basic physical properties as a resist, e.g. sensitivity, resolution and pattern shape, excellent also in shelf stability as a composition and retaining satisfactory adhesiveness to a substrate. SOLUTION: The radiation sensitive resin composition contains (A) a low molecular compound obtained by preparing a compound having one or more amino groups with at least one hydrogen atom bonding to a nitrogen atom and substituting a t-butoxycarbonyl group for one or more of such hydrogen atoms bonding to a nitrogen atom, (B) a radiation sensitive acid generating agent and (C) an alkali-insoluble or slightly alkali-soluble acid dissociable group- containing resin having an alicyclic structure in the principal chain and/or a side chain and a carboxylic acid anhydride structure in a side chain and convertible to an alkali-soluble resin when the acid dissociable group is dissociated.

公开(公告)号：JP2001235863A

公开(公告)日：2001-08-31

申请号：JP2000044784

申请日：2000-02-22

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F2/46 ,  G03F7/004

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent particularly in pattern shape as a chemical amplification type resist and excellent also in balance of characteristics including dry etching resistance, sensitivity and resolution. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated, (B) a radiation sensitive acid generating agent and (C) an abietic acid derivative of formula 1 [where R1-R4 are each H, hydroxyl, a 1-4C linear or branched alkyl or a 1-4C linear or branched alkoxyl and R5 is H, an optionally substituted 1-20C alkyl or -CH2COO6 (R6 is a 1-18C alkyl)].

公开(公告)号：JP2001235862A

公开(公告)日：2001-08-31

申请号：JP2000044179

申请日：2000-02-22

Applicant: JSR CORP

Inventor： DOUKI KATSUJI ,  KAJITA TORU ,  SHIMOKAWA TSUTOMU

IPC: G03F7/039 ,  C08F220/06 ,  C08F220/10 ,  C08F222/06 ,  C08F232/08 ,  C08K5/103 ,  C08L33/02 ,  C08L33/04 ,  C08L35/00 ,  C08L45/00 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent particularly in pattern shape as a chemical amplification type resist and excellent also in balance of characteristics including sensitivity and resolution. SOLUTION: The radiation sensitive resin composition contains (A) an alkali- insoluble or slightly alkali-soluble acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated, (B) a radiation sensitive acid generating agent and (C) a compound of formula 1 [where Z is an n-valent hydrocarbon group having an alicyclic carbon ring in which the total number of ring forming carbon atoms is 4-20 or its derivative and (n) is an integer of 1-4].