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公开(公告)号：JP2007139799A
公开(公告)日：2007-06-07
申请号：JP2007045978
申请日：2007-02-26
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： MIYAJIMA HISAKAZU , ARAKAWA MASAO , YABUTA AKIRA , SAKAI ATSUSHI
Abstract: PROBLEM TO BE SOLVED: To provide a highly sensitive sensor for detecting mechanical deformation amount, and an acceleration sensor and a pressure sensor using the same. SOLUTION: A sensor structure 1 comprises a silicon substrate, and is formed with a recess 3 having a diaphragm 2 of a thin pressure receiving part, by anisotropic-etching one part in reverse face side. A glass pedestal 4 is provided with a pressure introducing hole 5 for introducing fluid pressure in the recess 3, and is joined to a reverse face of the sensor structure 1. Carbon nanotube resistance elements 61, 62 are provided astride on a surface of the sensor structure 1 in a periphery of the diaphragm 2, in positions corresponding to the centers of peripheral edge parts in both sides of the diaphragm 2. Reference resistance elements 63, 64 are fixedly arranged on the surface of the sensor structure 1 in a periphery of the diaphragm 2 to form a bridge circuit for taking out a detection signal, together with the carbon nanotube resistance elements 61, 62. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供用于检测机械变形量的高灵敏度传感器，以及使用其的加速度传感器和压力传感器。 解决方案：传感器结构1包括硅衬底，并且形成有具有薄压力接收部分的隔膜2的凹部3，通过各向异性蚀刻一面在反面侧。 玻璃基座4设置有用于在凹部3中引入流体压力的压力引入孔5，并且与传感器结构1的背面接合。碳纳米管电阻元件61,62跨越传感器的表面 隔膜2的周围的结构体1，在与隔膜2的两侧的周缘部的中心对应的位置。基准电阻元件63,64固定地布置在传感器结构1的表面的周边 隔膜2与碳纳米管电阻元件61,62一起形成用于取出检测信号的电路电路。（C）2007，JPO＆INPIT
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公开(公告)号：JP2005158972A
公开(公告)日：2005-06-16
申请号：JP2003394665
申请日：2003-11-25
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： NAKAMURA MASAHIRO , YAGUCHI MITSUO , ITO NOBUHIRO , KONO KENJI , SAKAI ATSUSHI , ADACHI JUNJI , NISHIMORI TAISUKE , KAJITA SUSUMU
CPC classification number: B82Y30/00 , B82Y10/00 , Y02E10/549
Abstract: PROBLEM TO BE SOLVED: To provide an organic solar cell wherein an active layer containing an organic electron donor and an electron acceptor is provided between electrodes and its photoelectric conversion characteristic is improved.
SOLUTION: The organic solar cell is provided with an active layer 4 including an organic electron donor and an electron acceptor between electrodes 2 and 5. The electron acceptor uses a fullerene polymer, so that a distance between fullerene structures can be kept contact in the active layer 4 to improve the mobility of electron therebetween and the conversion efficiency can be improved.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题：提供一种有机太阳能电池，其中在电极之间提供含有有机电子给体和电子受体的有源层，并且其光电转换特性得到改善。 解决方案：有机太阳能电池在电极2和5之间设置有包括有机电子给体和电子受体的有源层4.电子受体使用富勒烯聚合物，使得富勒烯结构之间的距离可以保持接触 在有源层4中提高电子的迁移率，可提高转换效率。 版权所有（C）2005，JPO＆NCIPI
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43.发明专利
公开(公告)号：JP2004053424A
公开(公告)日：2004-02-19
申请号：JP2002211654
申请日：2002-07-19
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： MIYAJIMA HISAKAZU , ARAKAWA MASAO , YABUTA AKIRA , SAKAI ATSUSHI
CPC classification number: G01P15/123 , B81B3/0021 , B81B3/0086 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2203/0118 , B81B2203/0127 , G01L9/0055 , G01P2015/0828 , Y10S977/956
Abstract: PROBLEM TO BE SOLVED: To provide a highly sensitive mechanical quantity detection sensor and to provide an acceleration sensor and a pressure sensor using it. SOLUTION: The sensor structure 1 consists of a silicon substrate and forms a recess 3 having a diaphragm 2 being a thin pressure reception part by anisotropically etching a part of the back side. A glass made stage 4 is provided with a pressure introduction hole 5 for introducing fluid pressure in the recess 3 and contacted to the back surface of the sensor structure 1. In the position corresponding to the middle of both side edge of the diaphragm 2, carbon nanotube resistance elements 61 and 62 are provided so as to lie across the surface of the sensor structure 1 around the diaphragm 2. Together with these carbon nanotube resistance elements 61 and 62, resistance elements 63 and 64 for reference which construct bridge circuit for extracting detected signal are arranged and fixed on the sensor structure 1 surface around the diaphragm 2. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2002250712A
公开(公告)日：2002-09-06
申请号：JP2001047592
申请日：2001-02-23
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , SUGIURA YOSHIYUKI , ARII YASUTAKA
IPC: G01N27/414
Abstract: PROBLEM TO BE SOLVED: To provide an ion sensor in which the size can be reduced while prolonging the lifetime. SOLUTION: The ion sensor comprises a silicon substrate 1 having an ISFET 10 responsive to a specified ion formed on the major surface side, a liquid communicating part 38 formed at a thin part 1b which is formed by opening a recess 1a in the rear surface of the silicon substrate 1 and provided with a large number of fine pores 38a for touching an electrolyte 31 filling the recess 1a to a measuring solution on the major surface side of the silicon substrate 1, a support 15 boded to the silicon substrate 1 to choke the recess 1a, and a reference electrode 34 of silver - silver chloride touching the electrolyte 31. A liquid storing part 17 communicating with the recess 1a opening to the rear surface of the silicon substrate 1 and storing the electrolyte 31 is provided in the support 15 and the liquid storing section 17 made across the recess 1a and the support 15 is filled with the electrolyte 31.
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公开(公告)号：JP2001153832A
公开(公告)日：2001-06-08
申请号：JP33508099
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , SUGIURA YOSHIYUKI , ARII YASUTAKA , IITAKA YUKIO
IPC: G01N27/30 , G01N27/416
Abstract: PROBLEM TO BE SOLVED: To provide a chlorine ion sensor reduced in the size and improved in detection accuracy. SOLUTION: On a substrate 1, a substantially comb-shaped platinum electrode 10a formed of a platinum thin film and a substantially comb-shaped silver/silver chloride electrode 10b formed of a silver/silver chloride thin film are arranged face to face so that the electrodes 10a, 10b mesh with each other. Because the electrodes 10a, 10b are formed of thin films respectively, the size of the device can be reduced as a whole. In addition, projection parts 12a, 12b of the electrodes 10a, 10b are arranged alternately with their side faces arranged face to face substantially, so that facing areas of the electrodes 10a, 10b can be widened. Consequently, a current amount flowing between the electrodes 10a, 10b is increased, and detection accuracy can be improved.
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Patent Agency Ranking
公开(公告)号：JPH11132705A
公开(公告)日：1999-05-21
申请号：JP29608197
申请日：1997-10-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , HATAI TAKASHI , SUGIYAMA SUSUMU
Abstract: PROBLEM TO BE SOLVED: To provide a distortion detection element which can form a minute gap easily and a manufacturing method thereof. SOLUTION: This distortion detection element has a distortion causing plate 1, an upper electrode 3, whose support part 7 is supported by the distortion causing plate 1 and which is formed in such a manner that it overhangs in a rectangular shape in parallel with a substrate from an open end of the support part, and a lower electrode 2 formed on the distortion causing plate 1 so that it has the upper electrode 3 and a gap 4, and a capacitor is constituted of the upper electrode 3 and the lower electrode 2. Furthermore, an insulation film 5 is formed between the upper electrode 3 and the lower electrode 2, and a protective film 6 is formed on the upper electrode 3.
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47.发明专利
公开(公告)号：JPH09228055A
公开(公告)日：1997-09-02
申请号：JP3800896
申请日：1996-02-26
Inventor： HATAI TAKASHI , SAKAI ATSUSHI , KITAGAWA MASATOSHI
IPC: G01B7/16 , C23C16/32 , C23C16/50 , C23C16/511 , C30B29/36 , G01D5/18 , H01L21/205 , H01L29/84
Abstract: PROBLEM TO BE SOLVED: To provide the production by which the thin film can be formed at a comparatively low substrate temp. while using, as its gaseous raw materials, gaseous materials generally used for a semiconductor. SOLUTION: In this production, SiH4 and CH4 , both of which are used as the gaseous raw materials and H2 used as the gaseous diluent are introduced into a plasma formation chamber 1a through a gas introducing port 1G. At the time of forming a thin film by using a plasma formed in the plasma formation chamber 1a, an AC bias voltage having a frequency within the range of about 1 to 500kHz and a power density within the range of about 0.09 to 0.22W/cm is applied to a substrate 10 that is held on a substrate supporting base 4 in a reaction chamber 1b, from a frequency-variable AC power source AC through a matching box 3.
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公开(公告)号：JPH09148589A
公开(公告)日：1997-06-06
申请号：JP30178095
申请日：1995-11-20
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , HATAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To form at a low temperature a strain gage of a thin film wherein an amorphous silicon carbide phase, a silicon crystallite phase and a silicon carbide crystalite phase are mixed with each other, by making the volumetric ratio of the sum of the silicon and silicon carbide crystallite phases to the whole of the thin film specific. SOLUTION: A crystallization coefficient showing the volumetric ratio of the sum of contained crystal phases to the whole of a thin film is defined as follows. The crystallization coefficient of the thin film containing the crystal phases of silicon crystallite and silicon carbide crystallite is regarded as the sum of both the ratio of the peak intensity corresponding to silicon of the thin film to the crystal peak intensity of silicon powder in X-ray diffraction and the ratio of the peak intensity corresponding to silicon carbide of the thin film to the crystal peak intensity of silicon carbide powder in X-ray diffraction. A thin film 10 containing silicon carbide crystallite is formed by CVD, using as its raw-material gas the mixture of a gas containing Si and C such as silane with a doping gas such as diborane. The strain gage factor of the thin film 10 can reach the one not smaller than 30% under the condition of its formation temperature not higher than 400 deg.C and its crystallization coefficient not smaller than 30%.
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公开(公告)号：JPH06307925A
公开(公告)日：1994-11-04
申请号：JP10239693
申请日：1993-04-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , KAKINOTE KEIJI , SAKAI ATSUSHI , AIZAWA KOICHI , ISHIDA TAKUO , KUNUGIHARA TSUTOMU , YOSHIDA HITOSHI , TOMONARI SHIGEAKI , NAKAMURA TAKURO
Abstract: PURPOSE:To provide a highly reliable structure of infrared detection element which can be designed easily while suppressing the fluctuation of characteristics due to thermal variation. CONSTITUTION:The infrared detection element 1 comprises a substrate 2 partially penetrated or cut off by etching or the like, a thin film having high thermal resistance, i.e., a thermal insulation film 3, formed across the penetrated or cut off part (hollow part 2a) of the substrate 2, a thin film sensor 4 formed thereon, and an infrared ray absorbing film 7 formed thereon, wherein the infrared absorbing film 7 is split into two or more by means of slits 9. Since the infrared ray absorbing film 7 is restrained from warping by means of the slits 9, resistance of the thin film sensor 4 or a thermister can be increased and the thermal insulation film 3 can be protected against breakage resulting in a highly reliable and easy-to-design infrared detection element 1.
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公开(公告)号：JPH06137941A
公开(公告)日：1994-05-20
申请号：JP28912992
申请日：1992-10-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , SAKAI ATSUSHI , AIZAWA KOICHI , ISHIDA TAKUO , KAKINOTE KEIJI
Abstract: PURPOSE:To provide an infrared detecting element having a diaphragm structure in which a thermal insulating film is protected against distortion or fracture while enhancing infrared detection sensitivity. CONSTITUTION:The infrared detecting element comprises a substrate 10 having a hollow section 12, a thermal insulating film 20 covering the hollow section 12 while being supported by the substrate 10 at the periphery thereof, and an infrared detecting part provided at a part covering the hollow section 12 of the thermal insulating film 20, wherein the infrared detecting part comprises a thermister 40, a pair of electrodes 30, 30 connected with the thermister 40, and an infrared ray absorbing film 50 covering the surface of the thermister 40. Since the infrared ray absorbing film 50 is formed of silicon oxide nitride, internal stress is suppressed to protect the thermal insulating film against distortion or fracture while, furthermore, infrared detection sensitivity is enhanced because of high infrared ray absorptivity of silicon oxide nitride.
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