Abstract:
Various semiconductor processing components and methods for forming same are disclosed. In one embodiment a semiconductor processing component is formed of SiC, and an outer surface portion of the component has a surface impurity level that is not greater than 10 times a bulk impurity level. In another embodiment a method for treating a semiconductor processing component includes exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.
Abstract:
Ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a means roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concve outer peripheral portion that extends along a distance not less than 10% of d50by TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle.
Abstract:
An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0 wt % of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20 g/cm3.
Abstract:
Processes for forming ceramic particulate material. The ceramic particulate material includes alumina particles, the particles having a specific surface area (SSA) not less than 15 m2/g and not greater than 75 m2/g and a sphericity quantified by at least one of (i) a mean roundness not less than 0.710 as measured by Roundness Correlation Image Analysis, and (ii) a concavity less than 20%, wherein concavity is the percent of alumina particles based on a sample of at least 100 particles, which have a concave outer peripheral portion that extends along a distance not less than 10% of d50 by TEM inspection, the concave outer peripheral portion having a negative radius of curvature as viewed from an interior of the particle.
Abstract:
A polishing slurry includes liquid medium and particulate abrasive. The particulate abrasive includes soft abrasive particles, hard abrasive particles, and colloidal silica particles, wherein the soft abrasive particles have a Mohs hardness of not greater than 8 and the hard abrasive particles have a Mohs hardness of not less than 8, and wherein the soft abrasive particles and the hard abrasive particles are present at a weight ratio of not less than 2:1.
Abstract:
An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0 wt % of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20 g/cm3.
Abstract:
An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0 wt % of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20 g/cm3.
Abstract:
A polishing slurry includes liquid medium and particulate abrasive. The particulate abrasive includes soft abrasive particles, hard abrasive particles, and colloidal silica particles, wherein the soft abrasive particles have a Mohs hardness of not greater than 8 and the hard abrasive particles have a Mohs hardness of not less than 8, and wherein the soft abrasive particles and the hard abrasive particles are present at a weight ratio of not less than 2:1.
Abstract:
An abrasive particulate material is disclosed that includes alumina particles. The alumina particles include a transition alumina and at least 5.0 wt % of an amorphous phase. The transition alumina particles also have a density not greater than about 3.20 g/cm3.