公开(公告)号：IT8919875D0

公开(公告)日：1989-03-23

申请号：IT1987589

申请日：1989-03-23

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： OLIVO MARCO ,  RIVA CARLO

IPC: G11C17/00 ,  G11C16/04 ,  G11C16/28 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: A reference cell for reading EEPROM memory devices, capable of discharging any charges present in its own floating gate (3) without varying the geometry of the cell with respect to that of the associated memory cells and without requiring specific manufacturing steps. For this purpose, a switch element, for example a diode (D1), is provided between the floating gate (3) and the substrate (11) of the device and discharges any charges present in the floating gate toward the substrate during the cell idle state (in the absence of read signals)

公开(公告)号：IT8883646D0

公开(公告)日：1988-07-06

申请号：IT8364688

申请日：1988-07-06

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： OLIVO MARCO ,  PASCUCCI LUIGI ,  RIVA CARLO ,  ROSINI PAOLO ,  VILLA CORRADO

IPC: H01L21/8238 ,  H01L27/092 ,  H03K3/356 ,  H03K3/3565 ,  H03K19/003 ,  H01L