公开(公告)号：JPH0766151A

公开(公告)日：1995-03-10

申请号：JP21422893

申请日：1993-08-30

Applicant: SONY CORP

Inventor： ITO SATORU ,  ISHIBASHI AKIRA ,  IKEDA MASAO

IPC: H01L21/265 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To enhance reliability while lowering the current threshold and prolonging the service life by optimizing the doping method of p-type impurities for a II-VI compound semiconductor light emission device thereby preventing the optical quality of crystal from being damaged. CONSTITUTION:In the method for fabricating a semiconductor light emission device wherein impurities are doped at least partially through plasma excitation when a semiconductor layer is grown epitaxially on a substrate 1, p-type impurities are introduced into the regions 6, 7 where the light is introduced through ECR(electron cyclotron resonance) and introduced into the regions 9-11 where the light is not introduced through other plasma excitation.

公开(公告)号：JPH065920A

公开(公告)日：1994-01-14

申请号：JP18582192

申请日：1992-06-19

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  ITO SATORU ,  IRAKU YOSHINO ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI ,  AKIMOTO KATSUHIRO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To improve the element characteristics by realizing ohmic contact of a p-side electrode for a light emitting element using a p-type ZnSe layer and thereby reducing the applied voltage required for operation. CONSTITUTION:In a ZnSe-based light emitting element having a p-n junction comprising an n-type ZnSe layer 2 and a p-type ZnSe layer 3, a p-type ZnTe layer 4 is provided on the p-type ZnSe layer 3, and an Au electrode 5 is provided as p-side electrode on the p-type ZnTe layer 4.

公开(公告)号：JPH04280687A

公开(公告)日：1992-10-06

申请号：JP4350291

申请日：1991-03-08

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  AKIMOTO KATSUHIRO ,  IKEDA MASAO

IPC: H01L21/36 ,  H01L21/425 ,  H01L29/227 ,  H01L31/0296 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

Abstract: PURPOSE:To restrain holes from occurring in a P-type CdS even if it is of P-type so as to enhance the P-type CdS in crystallinity, reliability, and yield for the formation of a light emitting element high in emission efficiency of light short in wavelength by a method wherein CdS is doped with oxygen 10 -10 atom/cm in a dose to form a P-type CdS. CONSTITUTION:A CdS layer 2 is epitaxially grown on a GaAs single crystal substrate 1 through a molecular beam epitaxy method or the like. Thereafter, a CdS 2a is doped with oxygen 10 -100 atom/cm in a dose to form a P-type CdS. At this point, If oxygen is less than 10 atom/cm in dose, the CdS 2a can not be fully turned into P-type, and if oxygen exceeds 10 atom/cm in dose, the CdS 2a is not good enough in crystallinity. CdS doped with oxygen atoms where holes are restrained from occurring is excellent in crystallinity and turned into P-type. As the CdS concerned is shallow in acceptor level, high in activation rate, and excellent in crystallinity, a light emitting element which emits light of short wavelengths and is high in luminous efficiency can be obtained.

公开(公告)号：JPH03276785A

公开(公告)日：1991-12-06

申请号：JP7797590

申请日：1990-03-27

Applicant: SONY CORP

Inventor： TODE ATSUSHI ,  YAMAMOTO SUNAO ,  IKEDA MASAO

IPC: H01S5/00

Abstract: PURPOSE:To enhance a PL Iight-emitting intensity and to realize a lower threshold value and a longer life by specifying the carrier concentration at interface sides coming into contact with an active layer and in its neighborhood of an AlGaInP-based n-type clad layer and an AlGaInP-based p-type clad layer. CONSTITUTION:Regarding carrier concentrations of individual clad layers 2, 4 at a DH-type AlGaInP-based semiconductor laser 10, the n-type carrier concentration at the n-type clad layer 2 is set at 2 to 3X10 cm and the p-type carrier concentration at the p-type clad layer 4 is set at 3 to 4X10 cm ; then, the carrier concentrations become optimum and a PL light-emitting intensity becomes maximum. At this time, only a part of several hundred Angstrom near an active layer 3 of the semiconductor laser is set to an optimum carrier concentration; the carrier concentration in parts other than the part near the active layer 3 is set to a comparatively large carrier concentration as in conventional cases. As a result, the PL light-emitting intensity is enhanced without a drop in the element characteristic such as a drop in the carrier mobility or the like. Thereby, characteristics of a low threshold value, a long life and the like can be enhanced.

公开(公告)号：JPH0267780A

公开(公告)日：1990-03-07

申请号：JP21974188

申请日：1988-09-02

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  MORITA ETSUO

IPC: H01L21/205 ,  H01S5/00

Abstract: PURPOSE:To obtain a complete crystal under an optimum MOCVD condition at 680 deg.C and to make an oscillation wavelength short by a method wherein individual layers constituting an AlGaInP-based laser are grown by using a compound semiconductor substrate where a crystal plane tilted at a prescribed angle from a 111B crystal plane is used as a main face. CONSTITUTION:An n-type GaAs buffer layer 12, a first clad layer 13, an active layer 14, a second clad layer 15, a P-type GaInP cap layer 16 and a P-type GaAs cap layer 17 are grown, by MOCVD under an optimum condition, on an n-type GaAs substrate 11 where a crystal plane tilted at 2 deg. is used as a main face and which is doped with Si. Then, a Ti/Pt/Au layer 18 and a stripe- shaped Au layer 19 are formed; ions are implanted; a high-resistance region 21 is formed. An oscillation wavelength of this DH semiconductor laser is 649nm by a pulse operation at room temperature and is made shorter by 30nm or above.

公开(公告)号：JPH01175290A

公开(公告)日：1989-07-11

申请号：JP33606087

申请日：1987-12-28

Applicant: SONY CORP

Inventor： YAMAMOTO SUNAO ,  IKEDA MASAO

IPC: H01S5/00

Abstract: PURPOSE:To suppress abnormal diffusion to the active layer of impurities and prevent the deterioration in the quality of the active layer, by setting impurity concentration in a current bottleneck layer to a specified value in a semiconductor laser where the current bottleneck layer is formed on one of the clad layers in a double hetero structure. CONSTITUTION:A buffer layer 2, an n-type clad layer 3, an active layer 4, a p-type clad layer 5, a cap layer 8, and an n-type GaAs layer are formed by epitaxial growth in order on a substrate 1. Then, the center part of the n-type GaAs layer is removed selectively in the form of a stripe to form an n-type GaAs current bottleneck layer 11. After that, the p-type GaAs cap layer 8 is formed to obtain a semiconductor laser 12. Abnormal diffusion of a p-type impurity Zn from the clad layer 5 to the active layer 4 is suppressed by setting the impurity concentration of the n-type GaAs current bottleneck layer 11 to less than 2.0X10 cm and the superior active layer 4 is maintained. Thus, the internal current bottleneck type high grade semiconductor laser exhibiting a good character is obtained.

公开(公告)号：JPH01175279A

公开(公告)日：1989-07-11

申请号：JP33238687

申请日：1987-12-29

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  NAKANO KAZUSHI ,  TODA ATSUSHI

IPC: H01S5/00

Abstract: PURPOSE:To improve lifetime and static characteristics, by causing the carrier concentration of a p-type clad layer in a double hetero structure of the AlGaInP semiconductor laser to come to a low level in a region part from an active layer up to the prescribed distance and to come to a high concentration in a remaining region that is apart from the above prescribed distance. CONSTITUTION:A MOCVD process allows an n-type (Al0.5Ga0.5)0.5In0.5P clad layer 3; an undoped Ga0.5In0.5P active layer 4; a p-type (Al0.5Ga0.5)0.5In0.5P clad layer 11 having two stages of positive concentration distribution where the doping amount of Zn, that is, a positive hole concentration is a low concentration p1 and a region separated by a distance d from an active layer comes to a high concentration p2 by increasing the doping amount of Zn; and a p-type GaAs cap layer 6 to grow one after another on an n-type GaAs substrate 2. Required ions are implanted in such a way that ions reaches the p-type AlGaInP clad layer 11 by leaving the center part of the cap layer 6 in a stripe form and a semiconductor laser 12 is made up by forming an ion-implanted high resistance layer 7.

公开(公告)号：JP2014007434A

公开(公告)日：2014-01-16

申请号：JP2013217199

申请日：2013-10-18

Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

IPC: H01S5/065 ,  H01S5/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a mode-locked semiconductor laser element having a configuration capable of reducing the influence of piezo polarization and intrinsic polarization.SOLUTION: The mode-locked semiconductor laser element includes: a stacked structure including a sequential stack of a first compound semiconductor layer 30 composed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light-emitting region 41, and a second compound semiconductor layer 50; a second electrode 62; and a first electrode 61. The stacked structure is formed on a semi-polar or non-polar compound semiconductor substrate 21. The third compound semiconductor layer has a quantum well structure having a well layer and a barrier layer, and has an inclined waveguide. The flow of a current from the second electrode to the first electrode via the stacked structure generates an optical pulse in the light-emitting region.

Abstract translation: 要解决的问题：提供一种具有能够降低压电极化和固有极化影响的结构的锁模半导体激光元件。解决方案：锁模半导体激光元件包括：堆叠结构，其包括第一 由GaN基化合物半导体构成的化合物半导体层30，具有发光区域41的第三化合物半导体层40和第二化合物半导体层50; 第二电极62; 和第一电极61.层叠结构形成在半极性或非极性化合物半导体衬底21上。第三化合物半导体层具有阱层和阻挡层的量子阱结构，并且具有倾斜波导。 通过堆叠结构从第二电极到第一电极的电流的流动在发光区域中产生光脉冲。

公开(公告)号：JP2010245559A

公开(公告)日：2010-10-28

申请号：JP2010157512

申请日：2010-07-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01L21/205 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, using nitride based III-V compound semiconductors, which has longer operating life by improving the crystallinity of an optical waveguide layer. SOLUTION: A semiconductor laser is manufactured by sequentially growing an n-type AlGaN cladding layer 5, an n-type GaN optical waveguide layer 6, an active layer 7, an undoped GaN optical waveguide layer 17, a p-type AlGaN cap layer 9, a p-type GaN optical waveguide layer 10, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer. In this case, the n-type GaN optical waveguide layer 6 to the p-type AlGaN cap layer 9 are grown in an atmosphere of N 2 , and the p-type GaN optical waveguide layer 10 to the p-type GaN contact layer are grown in an atmosphere of a mixed gas of N 2 and H 2 . COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种通过提高光波导层的结晶度而具有更长使用寿命的氮化物III-V族化合物半导体的半导体发光器件。 解决方案：通过依次生长n型AlGaN包覆层5，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层17，p型AlGaN 盖层9，p型GaN光波导层10，p型AlGaN / GaN超晶格包层18和p型GaN接触层。 在这种情况下，n型GaN光波导层6到p型AlGaN覆盖层9在N 2 的气氛中生长，并且p型GaN光波导层10生长到 p型GaN接触层在N 2 和H 2 的混合气体的气氛中生长。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007053410A

公开(公告)日：2007-03-01

申请号：JP2006319994

申请日：2006-11-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： IKEDA MASAO

IPC: H01S5/40 ,  H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a light emitting device capable of manufacturing easily, and accurately controlling the emitting position of light. SOLUTION: A first light emitting element 20 is formed on the front surface of a first transparent substrate 21 in a conductive and visible region. A p-side electrode 28 is formed on the first light emitting element 20. An n-side electrode 29 is formed on the back surface of the first substrate 21 observing the position of the p-side electrode 28 through the first substrate 21. Then, the first light emitting element 20 is attached onto a conductive support substrate 11 such that the p-side electrode 28 is electrically connected with the support substrate 11. Then, a second light emitting element 30 is attached to the first substrate 21 such that the p-side electrode 57 is electrically connected with the n-side electrode 29 of the first light emitting element 20. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种能够容易地制造并且准确地控制光的发射位置的发光器件的制造方法。 解决方案：第一发光元件20形成在导电和可见区域中的第一透明基板21的前表面上。 p侧电极28形成在第一发光元件20上.n侧电极29形成在第一基板21的背面上，通过第一基板21观察p侧电极28的位置。然后 ，第一发光元件20被附着到导电支撑基板11上，使得p侧电极28与支撑基板11电连接。然后，第二发光元件30附接到第一基板21，使得 p侧电极57与第一发光元件20的n侧电极29电连接。版权所有（C）2007，JPO＆INPIT