公开(公告)号：JPH01276680A

公开(公告)日：1989-11-07

申请号：JP10513188

申请日：1988-04-27

Applicant: SONY CORP

Inventor： MORI YOSHIFUMI ,  SUZUKI MASAYUKI ,  MIYAJIMA TAKAO

IPC: H01L39/22 ,  H01L29/78

Abstract: PURPOSE:To modulate a conductivity remarkably by a method wherein the carrier concentration of a channel part between first and second electrodes is modulated and a superconduction transition temperature is varied to switch the conducting state of the channel part between superconduction and normal conduction. CONSTITUTION:A gate electrode 3 made of normal conductor such as metal or superconductor is provided on a superconductor 1 made of oxide system superconducting material such as Nd1+XBa2-XCu3O7-delta with an insulating thin film 2 whose thickness is thin enough to produce a carrier tunnel between to form a gate part 4. Then first and second lectrodes 5 and 6, i.e. source and drain electrodes, are provided on both the sides of the gate part 4. Carriers are injected into the above mentioned superconductor 1 under the gate part 4 through the insulating thin film 2 by applying a voltage to the gate electrode 3 and the carrier concentration of a channel part 8 between the first and second electrodes 5 and 6 and a superconduction transition temperature is varied to switch the conducting state of the channel part 8 between superconduction and normal conduction. With this constitution, the conductivity can be modulated remarkably.

公开(公告)号：JP2014025774A

公开(公告)日：2014-02-06

申请号：JP2012165403

申请日：2012-07-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OKI TOMOYUKI ,  OMORI SHIHO ,  TAMAMURA KOJI ,  MIYAJIMA TAKAO

IPC: G01N21/64 ,  A61B1/00 ,  A61B10/00

CPC classification number: A61B5/0071 ,  A61B1/043 ,  A61B5/0084 ,  A61B5/7242 ,  G01N21/6408 ,  G01N21/6456 ,  G01N2021/6484

Abstract: PROBLEM TO BE SOLVED: To improve an accuracy of determination of a tumor or the like, and to establish a novel diagnosis index about a tumor or the like, such as a progress of a tumor or the like and an invasion degree in a depth direction.SOLUTION: There is provided a photodynamic diagnosis apparatus 1 including: a light source 14 for generating a light pulse having a time width shorter than a fluorescence lifetime of a photosensitive medicine; and a detector 15 for measuring a temporally changing waveform of the fluorescence caused by the light pulse.

Abstract translation: 要解决的问题：为了提高肿瘤等的测定精度，并建立关于肿瘤等的新型诊断指标，例如肿瘤的进展等，以及深度方向的侵入度 解决方案：提供一种光动力诊断装置1，其包括：光源14，用于产生具有比感光药物的荧光寿命短的时间宽度的光脉冲; 以及用于测量由光脉冲引起的荧光的时间上变化的波形的检测器15。

公开(公告)号：JP2012015265A

公开(公告)日：2012-01-19

申请号：JP2010149344

申请日：2010-06-30

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KODA RINTARO ,  KURAMOTO MASARU ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/50 ,  H01S5/343

CPC classification number: H01S5/50 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0064 ,  H01S5/0071 ,  H01S5/028 ,  H01S5/0601 ,  H01S5/0625 ,  H01S5/0657 ,  H01S5/1003 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4006

Abstract: PROBLEM TO BE SOLVED: To provide an alignment method of a semiconductor optical amplifier capable of performing optimization of coupling efficiency of incident laser light and an optical waveguide of the semiconductor optical amplifier independently from an external monitoring device.SOLUTION: In an alignment method of a semiconductor optical amplifier 200 in which laser light from a laser light source 100 is optical-amplified and emitted, current of a predetermined value is applied to the semiconductor optical amplifier 200 while the laser light from the laser light source 100 is incident on the semiconductor optical amplifier 200, and the relative position of the semiconductor optical amplifier 200 for the laser light incident on the semiconductor optical amplifier 200 is adjusted so as to maximize the voltage applied to the semiconductor optical amplifier 200.

Abstract translation: 要解决的问题：提供一种能够独立于外部监视装置来实现能够优选入射激光的耦合效率和半导体光放大器的光波导的半导体光放大器的对准方法。 解决方案：在半导体光放大器200的对准方法中，其中来自激光光源100的激光被光放大和发射，预定值的电流被施加到半导体光放大器200，同时来自 激光光源100入射到半导体光放大器200上，并且调整入射在半导体光放大器200上的激光的半导体光放大器200的相对位置，以使施加到半导体光放大器200的电压最大化 （C）2012年，JPO＆INPIT

公开(公告)号：JP2011187579A

公开(公告)日：2011-09-22

申请号：JP2010049749

申请日：2010-03-05

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

IPC: H01S5/065

Abstract: PROBLEM TO BE SOLVED: To provide a driving method of a mode-locked semiconductor laser element, having a structure for reducing the influence due to piezo polarization and spontaneous polarization. SOLUTION: The mode-locked semiconductor laser element includes a laminated structure, obtained by sequentially laminating a first compound semiconductor layer 30 formed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light emitting region 41 and a second compound semiconductor 50; a second electrode 62; and a first electrode 61. The laminated structure is formed on a compound semiconductor substrate 21 having polarity; the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer; the thickness of the well layer is 1 to 10 nm and impurity doping concentration of the barrier layer is 2×10 18 through 1×10 20 cm -3 ; and in the driving method of the mode-locked semiconductor laser element, current is made to flow to the first electrode 61 from the second electrode 62 via the laminated structure, and thus an optical pulse can be generated in the light emitting region 41. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种具有减少由于压电极化和自发极化引起的影响的结构的锁模半导体激光元件的驱动方法。 解锁方案：锁模半导体激光元件包括层叠结构，其通过依次层叠由GaN基化合物半导体形成的第一化合物半导体层30，具有发光区域41的第三化合物半导体层40和 第二化合物半导体50; 第二电极62; 和第一电极61.层叠结构形成在具有极性的化合物半导体基板21上; 第三化合物半导体层包括具有阱层和阻挡层的量子阱结构; 阱层的厚度为1〜10nm，阻挡层的杂质掺杂浓度为2×10 18 20×SP> / SP>; 并且在锁模半导体激光元件的驱动方法中，电流通过层叠结构从第二电极62流向第一电极61，因此可以在发光区域41中产生光脉冲。 P>版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006352084A

公开(公告)日：2006-12-28

申请号：JP2006105647

申请日：2006-04-06

Applicant: SONY CORP

Inventor： OMAE AKIRA ,  TOMITANI SHIGETAKA ,  MAEDA YUUKI ,  SHIOMI HARUNORI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  YANASHIMA KATSUNORI ,  TANGE TAKASHI ,  YASUDA ATSUSHI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode of significantly high light emitting efficiency that can be manufactured by one-time epitaxial growth at a low cost, and a manufacturing method thereof. SOLUTION: In a recess 11a formed on one main surface of a sapphire substrate 11, growth in a lateral direction is performed from a GaN layer 12, after burying the recess 11a by making the GaN layer 12 grow after passing through a state of a triangular cross section shape with its bottom face as a base. A light emitting diode structure is formed on the GaN layer 12 by growing a GaN based semiconductor layer including an active layer on the GaN layer 12. By using the GaN based light emitting diode, a light emitting diode backlight, etc. is manufactured. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2004343137A

公开(公告)日：2004-12-02

申请号：JP2004208283

申请日：2004-07-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve crystallinity and electrical conductivity, and to average the composition ratio or p-type impurity concentration within the crystal growth side. SOLUTION: A first layer 11, consisting of AlGaN mixed crystal with a thickness of about 1 to 100 nm, and a second layer 12, consisting of p-type GaN doped with Mg to a thickness of about 1 to 100 nm are alternately laminated in a plurality of laminations, respectively. Since the first layer 11 and the second layer 12, which have independent contents of aluminum and p-type impurity concentrations and are different from each other, are formed in separate processes, respectively, a proper p-type group III nitride compound semiconductor having the properties as p-type AlGaN mixed crystal, as whole, is obtained. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高结晶度和导电性，并平均晶体生长侧内的组成比或p型杂质浓度。 解决方案：由厚度约1至100nm的AlGaN混合晶体构成的第一层11和由掺杂有Mg的厚度约1至100nm的p型GaN组成的第二层12是 交替层叠在多个叠片中。 由于具有独立含量的铝和p型杂质浓度彼此不同的第一层11和第二层12分别在分开的工艺中分别形成适当的p型III族氮化物半导体，其具有 获得了作为p型AlGaN混晶的性能。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004177264A

公开(公告)日：2004-06-24

申请号：JP2002343615

申请日：2002-11-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KUDO YOSHIHIRO ,  MIYAJIMA TAKAO

IPC: G01N23/223 ,  G01N33/00 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for analyzing an InGaN layer, which can obtain a ratio at which indium atoms exist in a mixed crystal of the In x Ga 1-x N layer and a ratio, at which they exist as the indium metal. SOLUTION: In the method, two or more In x Ga 1-x N layers, which have composite ratios x which are different from each other are made up under such conditions that only mixture ratios of starting material gas are changed, while keeping respective temperature conditions and pressure conditions which are identical to each other. Then, a process for analyzing the coordination number of the In atoms ranging near the atomic distance of two first In atoms which are located the most adjacent is carried out for arbitrary In atoms in all of the two or more In x Ga 1-x N layers, and regression line of changes in the coordination number versus the composition ratio x is drawn, and the ratio of the first In atoms existing in the In x Ga 1-x N layers is obtained from the slope of the regression line, and the ratio of the second In atoms is obtained from the intercept of the regression line. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2000091703A

公开(公告)日：2000-03-31

申请号：JP25801498

申请日：1998-09-11

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  MARUYAMA TAKAHIRO ,  MORISHIMA SHINICHI ,  MIYAJIMA TAKAO

IPC: H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and its manufacturing method by which a light emitting diode or a semiconductor laser can emit a yellow light or a red light by using Ga1-xInxN as a light emitting material as well as lights having various wavelengths by using a nitride-based III-V compound semiconductor containing Ga1-xInxN as a light emitting material. SOLUTION: A semiconductor light emitting element using a nitride-based III-V group compound semiconductor uses as a light emitting material a nitride- based III-V compound semiconductor doped with a rare-earth element. For example, a GaN-based semiconductor light emitting element uses an Eu-doped Ga1-xInxN active layer 6. The concentration of rare-earth element in the nitride- based III-V compound semiconductor is 1×1018-1×1021 cm-3. The growth temperature of a light emitting layer is 500-800 deg.C.

公开(公告)号：JPH1012924A

公开(公告)日：1998-01-16

申请号：JP7806097

申请日：1997-03-28

Applicant: SONY CORP

Inventor： MIYAJIMA TAKAO ,  YAN RU BEREGO ,  KAWAI HIROHARU

IPC: C30B23/08 ,  C30B29/38 ,  H01L21/203 ,  H01L21/338 ,  H01L29/812 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To improve consistency of GaN epitaxial growth by forming one or more compound semiconductor layers containing N and one or more elements of Al, B, Ga and In, on a substrate having a perovskite structure with its main surface constituted by a crystal plane of a specified azimuth. SOLUTION: At least one or more compound semiconductor layers containing N and one or more elements of Al, B, Ga and In are formed on a substrate having a perovskite structure with its main surface constituted by a (111), (110), or (001) crystal plane. For example, a buffer layer 2 of GaN, AIN, or a AlGaN, if necessary, is epitaxially grown on a (111) YAlO3 substrate by a MBE method. Subsequently, a first clad layer 3 of a first conducivity type, a GaN active layer 4, a second clad layer 5 of a second conductivity type, and a p-type GaN contact layer 6 of the same conduction type as the second conductivity type are sequentially epitaxially grown.

公开(公告)号：JPH0645588A

公开(公告)日：1994-02-18

申请号：JP21663292

申请日：1992-07-23

Applicant: SONY CORP

Inventor： MIYAJIMA TAKAO ,  AKIMOTO KATSUHIRO

IPC: H01L21/28 ,  H01L29/43 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01L29/46 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To provide an ohmic electrode, which is provided on a II-VI compound semiconductor N-type crystal layer consisting of a ZnSe or the like and has a low contact specific resistance value, stable characteristics and uniform ohmic properties, and a method of forming the ohmic electrode. CONSTITUTION:A method of forming an ohmic electrode on an II-VI compound semiconductor N-type crystal line layer consists of a process for making a thallium layer or a thallium-containing metal layer deposit on the II-VI compound semiconductor N-type crystal layer and a process for performing an alloying treatment on the layer consisting of thallium or the thallium-containing metal layer. The ohmic electrode 22 is formed on the II-VI compound semiconductor N-type crystalline layer 20 and consists of the thallium layer or the thallium-containing metal layer.