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    41.
    发明专利
    未知

    公开(公告)号：DE69817642D1

    公开(公告)日：2003-10-09

    申请号：DE69817642

    申请日：1998-03-10

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  SHIOMI HIROMU ,  KUMAZAWA YOSHIAKI ,  IMAI TAKAHIRO

    IPC: H01J1/304 ,  H01J1/30

    Abstract: An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a ä100ü face, and the diamond protrusion is surrounded by ä111ü faces.

    42.
    发明专利
    未知

    公开(公告)号：DE69526748T2

    公开(公告)日：2002-09-05

    申请号：DE69526748

    申请日：1995-02-24

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： UTUMI YOSHIHARU ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

    IPC: C30B23/02 ,  C30B25/02 ,  C30B25/18

    Abstract: An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond; an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and a process for producing these aluminum nitride film substrate.

    43.
    发明专利
    未知

    公开(公告)号：DE69430024D1

    公开(公告)日：2002-04-11

    申请号：DE69430024

    申请日：1994-06-14

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAMOTO YOSHIYUKI ,  TSUNO TAKASHI ,  IMAI TAKAHIRO ,  FUJIMORI NAOJI

    IPC: H01L21/48 ,  H01L23/367 ,  H01L23/373

    Abstract: A process for the production of a heat sink comprising a diamond substrate and fins of diamond projecting therefrom for improving heat dissipation, the fins being spaced apart to define open channels therebetween, which process comprises the steps of: (a) cutting a diamond plate prepared by gaseous phase synthesis to obtain diamond base materials; (b) placing the diamond base materials on a supporting member designed in such a manner that gaps are provided for inserting fins, wherein the highest part of the fins to be inserted and the surface of the diamond divided base materials is substantially the same in height, and inserting the fins in the gaps; and (c) growing diamond on the diamond divided base materials and fins and obtaining the said diamond heat sink without removing the diamond divided base materials.

    44.
    发明专利
    未知

    公开(公告)号：DE69802037D1

    公开(公告)日：2001-11-22

    申请号：DE69802037

    申请日：1998-04-17

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SAITO HIROHISA ,  TSUNO TAKASHI ,  IMAI TAKAHIRO ,  KUMAZAWA YOSHIAKI

    IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205 ,  C30B25/20

    Abstract: An initial single-crystalline diamond base material (50) is prepared from a flat plate having a major surface (50a) and side surfaces consisting of low-index planes for homoepitaxially vapor-depositing single-crystalline diamond on the single-crystalline diamond base material (50), thereby forming single-crystalline diamond having a large area. Holding means (1) for the single-crystalline diamond base material (50) consists of a material hardly forming a compound with carbon, or is coated with such a material. According to this method and this apparatus, single-crystalline diamond can be stably formed on the surfaces of the base material (50). Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time by either plasma CVD or a thermal filament method.

    47.
    发明专利
    未知

    公开(公告)号：DE3856278T2

    公开(公告)日：1999-05-20

    申请号：DE3856278

    申请日：1988-03-11

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： IMAI TAKAHIRO ,  FUJIMORI NAOJI ,  NAKAHATA HIDEAKI

    IPC: H01L21/20 ,  H01L21/36 ,  C30B29/04

    Abstract: A thin film single crystal substrate which comprises a base substrate made of single crystal diamond having the (100) or (110) plane orientation, an intermediate layer of single crystal silicon carbide, and at least one thin film of a single crystal of a material selected from the group consisting of silicon, boron nitride, gallium nitride, indium nitride, aluminum nitride, boron phosphide, cadmium selenide, germanium, gallium arsenide, gallium phosphide, indium phosphide, gallium antimonide, indium arsenide, indium antimonide, aluminum phosphide, aluminum arsenide, aluminum antimonide, cadmium telluride, mercury sulfide, zinc oxide, zinc sulfide, zinc selenide and zinc telluride.

    50.
    发明专利
    未知

    公开(公告)号：DE69411374D1

    公开(公告)日：1998-08-06

    申请号：DE69411374

    申请日：1994-04-05

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO ,  TSUNO TAKASHI ,  FUJIMORI NAOJI

    IPC: C04B35/584 ,  C04B35/628 ,  C04B35/80 ,  C08K9/02 ,  C22C26/00 ,  C23C16/00 ,  C23C16/01 ,  C23C16/26 ,  C23C16/27 ,  C23C16/56 ,  C22C1/09 ,  C22C29/00

    Abstract: An object of the present invention is to provide adhesion or bonding to a matrix in relation to a composite material which is reinforced with vapor-deposited diamond. In order to improve bondability to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. For the removal of hydrogen, the diamond is heated under an oxidative atmosphere at a temperature of about 150 DEG C to about 800 DEG C, or under a non-oxidative atmosphere at a temperature of about 800 DEG C to about 1500 DEG C. The surface of the vapor-deposited diamond containing not more than about 1 x 10 /cm of hydrogen atoms is bonded to the matrix of resin or a metal with sufficient strength. In order to improve bondability to the matrix (1), the surface of diamond (2) is coated with graphite, Al, Si or B, or a carbide or a nitride thereof (3). In order to reinforce bondability, diamond doped with B or N is employed as a reinforcing material. The matrix (1) is prepared from a metal, ceramics or resin.

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