公开(公告)号：EP2039812A4

公开(公告)日：2010-08-11

申请号：EP07745328

申请日：2007-06-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MICHIMASA ,  MIZUHARA NAHO ,  NAKAHATA HIDEAKI

IPC: C30B29/38 ,  C30B23/06

CPC classification number: C30B29/403 ,  C30B23/00 ,  C30B23/025

公开(公告)号：EP1972702A4

公开(公告)日：2010-08-11

申请号：EP07706498

申请日：2007-01-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIZUHARA NAHO ,  MIYANAGA MICHIMASA ,  KAWASE TOMOHIRO ,  FUJIWARA SHINSUKE

IPC: C30B29/38 ,  H01L21/338 ,  H01L29/812

CPC classification number: H01L29/7787 ,  C30B23/00 ,  C30B29/403 ,  H01L29/2003 ,  H01L29/66462 ,  Y10T428/26

公开(公告)号：EP2557197A4

公开(公告)日：2017-08-16

申请号：EP11762622

申请日：2011-03-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NUMANO MASATADA ,  MIYANAGA MICHIMASA ,  UCHIHARA TAKESHI ,  OISHI YUKIHIRO ,  KAWABE NOZOMU

IPC: C22F1/06 ,  B21B3/00 ,  B21C47/02 ,  B22D11/00 ,  B22D11/06 ,  B22D11/124 ,  B22D11/22 ,  B22D41/50 ,  C21D9/68 ,  C22C23/00 ,  C22C23/02 ,  C22F1/00

CPC classification number: C22F1/00 ,  B21B3/003 ,  B21C47/04 ,  B21C47/26 ,  B21C47/326 ,  B22D11/001 ,  B22D11/124 ,  B22D11/22 ,  B22D41/50 ,  C21D8/021 ,  C21D9/68 ,  C22C23/00 ,  C22F1/06 ,  Y10T428/12292

Abstract: A coil material capable of contributing to an improvement of the productivity of a high-strength magnesium alloy sheet and a method for manufacturing the coil material are provided. Regarding the method for manufacturing a coil material through coiling of a sheet material formed from a metal into the shape of a cylinder, so as to produce the coil material, the sheet material is a cast material of a magnesium alloy discharged from a continuous casting machine and the thickness t (mm) thereof is 7 mm or less. The sheet material 1 is coiled with a coiler while the temperature T (°C) of the sheet material 1 just before coiling is controlled to be a temperature at which the surface strain ((t/R) x 100) represented by the thickness t and the bending radius R (mm) of the sheet material 1 becomes less than or equal to the elongation at room temperature of the sheet material 1.

Abstract translation: 提供一种能够有助于提高高强度镁合金板的生产率的卷材以及该卷材的制造方法。 关于通过将由金属形成的片材卷绕成圆筒形状来制造卷材的方法，以制造卷材，片材是从连续铸造机排出的镁合金的铸造材料 厚度t（mm）为7mm以下。 片材1卷绕在卷取机上，并且将卷取前的片材1的温度T（℃）控制为由厚度t表示的表面应变（（t / R）×100） 并且片材1的弯曲半径R（mm）变得小于或等于片材1在室温下的延伸率。

公开(公告)号：EP2083099A4

公开(公告)日：2016-01-20

申请号：EP07831826

申请日：2007-11-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIZUHARA NAHO ,  UEMATSU KOJI ,  MIYANAGA MICHIMASA ,  TANIZAKI KEISUKE ,  NAKAHATA HIDEAKI ,  NAKAHATA SEIJI ,  OKAHISA TAKUJI

IPC: C30B29/38 ,  C30B23/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/02 ,  H01L21/205 ,  H01L29/04 ,  H01L29/20

CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

Abstract: The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal (20) having a major surface (20 m ) of plane orientation other than {0001}, designated by choice, includes: a step of slicing III-nitride bulk crystal (1) into a plurality of III-nitride crystal substrates (10 p ), (10 q ) having major surfaces (10 pm ), (10 qm ) of the designated plane orientation; a step of disposing the substrates (10 p ), (10 q ) adjoining each other sideways in such a way that the major surfaces (10 pm ), (10 qm ) of the substrates (10 p ), (10 q ) parallel each other and so that the [0001] directions in the substrates (10 p ), (10 q ) are oriented in the same way; and a step of growing III-nitride crystal (20) onto the major surfaces (10 pm ), (10 qm ) of the substrates (10 p ), (10 q ).

公开(公告)号：EP2309040A4

公开(公告)日：2014-08-13

申请号：EP09773381

申请日：2009-06-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ARAKAWA SATOSHI ,  SAKURADA TAKASHI ,  YAMAMOTO YOSHIYUKI ,  SATOH ISSEI ,  TANIZAKI KEISUKE ,  NAKAHATA HIDEAKI ,  MIZUHARA NAHO ,  MIYANAGA MICHIMASA

IPC: C30B29/38 ,  C30B23/06 ,  G02B1/02 ,  G02B3/00

CPC classification number: G02B1/02 ,  C30B23/025 ,  C30B29/403 ,  C30B29/406 ,  G02B3/00 ,  G02B13/143 ,  Y10T428/21 ,  Y10T428/24355

公开(公告)号：EP2383373A4

公开(公告)日：2013-10-09

申请号：EP10733470

申请日：2010-01-20

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SATOH ISSEI ,  MIYANAGA MICHIMASA ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI

IPC: C30B29/38 ,  C30B23/06 ,  C30B29/40

CPC classification number: C30B23/066 ,  C30B29/403

公开(公告)号：EP2258890A4

公开(公告)日：2011-07-06

申请号：EP08871941

申请日：2008-12-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MICHIMASA ,  MIZUHARA NAHO ,  TANIZAKI KEISUKE ,  KAWASE TOMOHIRO ,  NAKAHATA HIDEAKI

IPC: C30B29/38 ,  C30B23/06 ,  H01L21/205

CPC classification number: C30B29/403 ,  C30B23/025 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631

公开(公告)号：EP2218806A4

公开(公告)日：2011-05-18

申请号：EP08857491

申请日：2008-11-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SATOH ISSEI ,  MIZUHARA NAHO ,  TANIZAKI KEISUKE ,  MIYANAGA MICHIMASA ,  NAKAHATA HIDEAKI

IPC: C30B29/38 ,  C30B23/00 ,  C30B23/06 ,  C30B25/00 ,  C30B25/18 ,  H01L21/203 ,  H01L21/205 ,  H01L33/32

CPC classification number: C30B29/403 ,  C30B23/00 ,  C30B23/025 ,  C30B25/00 ,  C30B25/18

公开(公告)号：EP2037012A4

公开(公告)日：2010-08-11

申请号：EP07745331

申请日：2007-06-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIZUHARA NAHO ,  KAWASE TOMOHIRO ,  MIYANAGA MICHIMASA

IPC: C30B29/38 ,  H01L21/20 ,  H01L21/203 ,  H01L33/00 ,  H01L33/30

CPC classification number: C30B29/403 ,  C30B23/02 ,  H01L21/02378 ,  H01L21/0254 ,  H01L21/02631

公开(公告)号：EP2037011A4

公开(公告)日：2009-09-09

申请号：EP06766810

申请日：2006-06-16

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MIYANAGA MICHIMASA ,  MIZUHARA NAHO ,  FUJIWARA SHINSUKE ,  NAKAHATA SEIJI ,  NAKAHATA HIDEAKI

IPC: C30B29/40

CPC classification number: C30B23/005 ,  C30B29/403 ,  C30B35/002 ,  Y10T428/2982

Abstract: A method of growing a good-quality single crystal of a Group III element nitride with satisfactory reproducibility; and a single crystal of a Group III element nitride obtained by the growth method. The method comprises growing a single crystal (3) of a Group III element nitride in a crystal growth vessel (11), and is characterized in that a porous object which is made of a metal carbide and has a porosity of 0.1-70% is used as at least part of the crystal growth vessel (11). Due to the use of this crystal growth vessel (11), 1-50% of a raw-material gas (4) present in the crystal growth vessel (11) can be discharged from the crystal growth vessel (11) through pores of the porous object.